KIA50N03AD

KIA 50 Amps, 30 Volts N-CHANNEL MOSFET 50N03 SEMICONDUCTORS 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A  RDS(ON)=9.5mΩ(Max.),VGS@4.5V,Ids@30A 3. Pin configuration Pin 1 2 3 4 1 of 3 Function Gate Drain Source Drain Rev 1.0 JAN 2014 KIA N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 SEMICONDUCTORS 4. Maximum ratings and thermal characteristics (Ta=25°C,unless otherwise notes) Symbol Value Unit Rating Drain-source voltage VDS 30 V Gate-source voltage VGS +20 V Continuous drain current ID 50 A IDM 200 A TA=25°C PD 60 W TA=75°C PD 23 W Operating junction and storage temperature range TJ/TSTG -55 to 150 °C Junction-to-case thermal resistance RθJC 1.8 °C/W Junction-to ambient themal rasistance (PCB mount)2) RθJA 50 °C/W Pulsed drain current Maximum power dissipation 1) Note:1.Repetitive rating:pulse width limited by the maximum junction temperation 2.1-in2 2oz Cu PCB board 3.Guaranteed by design;not subject to production testing 5. Ordering information Part number Package KIA50N03 TO-251,TO-252,TO-220 6. Typical application circuit 2 of 3 Rev 1.0 JAN 2014 KIA N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 SEMICONDUCTORS 7. Electrical characteristics (Ta=25°C,unless otherwise notes) Min. Typ. Max. Units Parameter Symbol Test conditions Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 30 - - V Drain-source on-state rasistancem RDS(ON) VGS=4.5V,ID=30A - 9.5 13.0 mΩ VGS=10V,ID=30A - 6.5 9.0 mΩ Gate threshold voltage VGS(th) VDS=VGS,ID=-250μA 1 1.8 3 V Forward transconductance gfs VDS=15V,ID=15A - 12 - S Zero gate voltage drain current IDSS VDS=25V,VGS=0V - - 1 μA Gate-source forward leakage IGSS VGS=+20V,VDS=0V - - +100 nA Total gate charge Qg - 10 25 nC Gate-source charge Qgs 3.5 10 nC Gate-drain (“miller”)charge Qgd ID=35A VDS=15V VGS=10V - 3 65 nC Turn-on delay time td(off) - 12 - ns Rise time tr - 4 - ns Turn-off delay time td(off) - 32 - ns Fall time tf - 6 - ns Input capacitance Ciss - 1180 - pF Output capacitance Coss - 270 - pF Reverse transfer capacitance Crss - 145 - pF Static Dynamic3) VDD=15V ID=1A RG=6Ω RL=15Ω VGEN=10V VGS=0V VDS=15V f=1.0MHz Source-drain diode Parameter Symbol Test condition Min. Typ. Max. Units Diode forward voltage VSD IS=20A,VGS=0V - 0.87 1.5 V Max.diode forward current IS - - 20 A Notes:Pulse width