BC817-40(6CT)

BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage BC817 BC818 BC817 BC818 Collector Emitter Voltage Value 50 30 45 25 VCBO VCEO Emitter Base Voltage Unit V V VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 300 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Electrical Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 100 160 250 40 - 250 400 600 - - ICBO - - 100 nA Current Gain Group -16 -25 -40 at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 20 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at IC = 500 mA, VCE = 1 V IEBO - - 100 nA VCE(sat) - - 0.7 V VBE(on) - - 1.2 V Transition Frequency at VCE = 5 V, IC = 10 mA, f = 50 MHz fT 100 - - MHz Cob - 5 - pF Collector Base Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated：16/03/2015 Rev：01 BC817 / BC818 Power Dissipation: Ptot (mW) 500 400 300 200 100 0 0 25 100 150 A m b ie n t T e m p e ra tu re : T a ( C ) 200 O P o w e r D e ra tin g C u rv e SEMTECH ELECTRONICS LTD. ® Dated：16/03/2015 Rev：01