Mar 2015
SS32 thru SS310
SMD Schottky Barrier Diodes
Revision: A
General Description
This Schottky diode is for use in low voltage,
high frequency rectifier of switching mode power
supplier, DC/DC converters and polarity protection
Features
Case: SMA, molded epoxy body
Terminal: Matte tin plated leads
Polarity: See mark on body
application.
Low power loss, high efficiency
Low Forward Voltage Drop
High forward surge capacity
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
SS32
SS33
SS34
SS35
SS36
SS38
SS39
SS310
Units
VRRM
20
30
40
50
60
80
90
100
V
VRMS
14
21
28
35
42
56
63
70
V
VDC
20
30
40
50
60
80
90
100
V
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking
voltage
Maximum average forward
IF(AV)
3.0
A
IFSM
80
A
TJ, TSTG
-50 to 150
℃
rectifier current
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
Operating Junction
Temperature Range
Electrical Characteristics
Parameter
Condition
(TA=25℃ unless otherwise noted)
Symbol
SS32
SS33
SS34
SS35
SS36
SS38
SS39
Units
SS310
Maximum
instantaneous
IF=3A
VF
0.55
0.75
0.85
V
forward voltage
Maximum DC
TC=25℃
reverse current at
blocking voltage
0.5
IR
TC=125℃
Thermal Characteristic
Parameter
Typical Thermal resistance
mA
10
(TA=25℃ unless otherwise noted)
Symbol
SS32 thru SS310
Units
RθJA (1)
88
℃/W
1. P.C.C. Mounted with 0.2”× 0.2”(5.0×5.0mm) copper pads
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SS32 thru SS310
60Hz RESISTIVE OR
INDUCTIVE LOAD
3.0
2.0
1.0
P.C.B.MOUNTED
0.27X0.27″(7.0X7.0mm)
COPPER PAD AREAS
0
50
60
70
80
90
100 110 120 130 140 150 160
F1G.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
TL =100℃
8.3ms Single Half Sine-Wave
(JEDEC Method)
80
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
F1G.1-FORWARD CURRENT
DERATING CURVE
PEAK FORWARD SURGE CURRENT,
Ratings and Characteristics Curves (TA=25℃ unless otherwise noted)
60
40
20
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
LEAD TEMPERATURE,(℃)
F1G.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
20
TJ =25℃
Pulse Width=300us
1% Duty Cycle
10
1.0
0.1
10
TJ =125℃
1.0
TJ =10℃
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
F1G.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
F1G.4-TYPICAL REVERSE CHARACTERISTICS
100
0
20
40
60
80
100
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
100
TJ =25℃
f=1MHz
Vsig=50mVp-p
10
1.0
10
100
REVRESE VOLTAGE, VOLTS
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SS32 thru SS310
Package Outline Dimensions in inches and millimeters
SMA(DO-214AC)
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone: +86-21-33932402
33932403
33932405
33933508
33933608
Fax: +86-21-33932401
Email: webmaster@sino-ic.net
Website: http://www.sino-ic.net
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
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