LPM9926SOF

Preliminary Datasheet LPM9926 20V Dual N-Channel MOSFET General Description Features The LPM9926 uses advanced trench technology to  100% EAS Guaranteed provide excellent RDS(ON) , low gate charge and  Green Device Available operation with gate voltages as low as 1.8V while  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Order Information LPM9926 □□ Pin Description □ Pin Number Pin Description Package Type 1 S2 SO：SOP8 2 G2 3 S1 4 G1 F: Pb-Free Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging 5 D2 6 7 D1 8 Pin Configurations S2 G2 1 2 Marking Information 8 D2 7 D2 SOP8 S1 3 6 D1 G1 4 5 D1 Part Marking Package Shipping LPM9926SOF LPS SOP8 4K/REEL LPM9926 YWX Marking indication: Y:Production year W:Production week LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com X:Production batch. www.lowpowersemi.com Page 1 of 7 Preliminary Datasheet LPM9926 Absolute Maximum Ratings Parameter Symbol Maximum Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation TA=70℃ Junction and Storage Temperature Range V 7.6 ID 6.1 IDM TA=25℃ Unit A 38 2 PD W 1.28 TJ, TSTG -55 to 150 ℃ Thermal resistance ratings Parameter Symbol Junction-to-Case Thermal Resistance t ≤ 10s Junction-to-Case Thermal Resistance Steady State Maximum Junction-to-Lead Steady State LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com RθJA RθJL TYP Unit 48 ℃/W 74 ℃/W 32 ℃/W www.lowpowersemi.com Page 2 of 7 Preliminary Datasheet LPM9926 Electrical Characteristics Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Conditions Min BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 20 IDSS Zero Gate Voltage Drain Current IGSS Typ Max Units STATIC PARAMETERS V VDS=20V, VGS=0V 1 TJ=55℃ 5 Gate-Body leakage current VDS=0V, VGS=12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.4 1.1 V ID(ON) On state drain current VGS=10V, VDS=5V 38 RDS(ON) Static Drain-Source On-Resistance 0.75 A VGS=10V, ID=7.6A 16.5 23 TJ=125℃ 25 30 VGS=4.5V, ID=7A 18.5 28 VGS=2.5V, ID=6A 24 38 gFS Forward Transconductance VDS=5V, ID=7.6A 25 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS μA Maximum Body-Diode Continuous Current mΩ S 1 V 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 525 pF 95 pF 75 pF 1.7 Ω 12.5 nC 6 nC 1 nC SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time VGS=10V, VDS=20V, RL= 2Ω, 7.5 ns tD(off) Turn-Off DelayTime RGEN=3Ω 20 ns tf Turn-Off Fall Time 6 ns trr Body Diode Reverse Recovery Time IF=7.6A, dI/dt=100A/μs 14 ns Qrr Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/μs 6 nC VGS=10V, VDS=15V, ID=7.6A Typical Characteristics LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 7 Preliminary Datasheet LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM9926 Page 4 of 7 Preliminary Datasheet LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM9926 Page 5 of 7 Preliminary Datasheet LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM9926 Page 6 of 7 Preliminary Datasheet LPM9926 Packaging Information SOP8 LPM9926-00 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 7 of 7