WSB5543W-2/TR

WSB5543W WSB5543W Middle Power Schottky Barrier Diode Http://www.sh-willsemi.com Features  1.0A Average rectified forward current  Trench MOS Schottky technology  Low forward voltage,low leakage current  Small package SOD-323F SOD-323F Applications Circuit  Switching circuit  Middle current rectification Marking Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current(1) IO 1.0 A IFSM 7 A TJ -55 ~ 150 O Operating temperature Topr -55 ~ 150 O Storage temperature Tstg -55 ~ 150 O Forward peak surge current(2) Junction temperature C C C Electronics characteristics (TA=25oC) Parameter Symbol Condition Min. Typ. Max. Unit VF IF=1.0A - 0.48 0.57 V Reverse current IR VR=VR - 8 50 uA Junction capacitance CJ VR=1V, F=1MHz - 80 - pF Thermal resistance(4) RθJSP Junction to Soldering point - - 60 K/W Forward voltage(3) Order Informations Device WSB5543W-2/TR Package Marking SOD-323F DA* (5) Shipping 3000/Reel&Tape Note 1: Duty cycle=0.5，f=20kHz，square wave; Note 2: Pulse Width=8.3ms, Single sine Pulse Note 3: Single Pulse test tp=380us; Note 4: Soldering point of cathode tab； Note 5:* = Month code (A~Z); DA = Device code Will Semiconductor Ltd. 1 Mar, 2017 - Rev. 1.1 WSB5543W Typical characteristics (Ta=25oC, unless otherwise noted) 10000 1 1000 Reverse Current(uA) Forward Current(A) o 150 C o 125 C 0.1 o 85 C o 65 C o 25 C 0.01 o 0C o -50 C o 125 C o 85 C 100 o 65 C 10 o 25 C 1 o 0.1 0C 0.01 o -50 C 1E-3 0.0 0.1 0.2 0.3 0.4 1E-3 0.5 10 20 Forward voltage vs. Forward current Reverse current vs. Reverse voltage 1000 Cj-Junction Capcitance(pF) (1) 1.2 Average Forward Current (A) 40 Reverse Voltage(V) Forward Voltage(V) 0.8 0.4 0.0 30 0 25 50 75 100 125 o Ta=25 C,f=1MHz 10 1 0.1 150 o 0 5 10 15 20 25 Reverse Voltage(V) Tsp( C) Current Derating Will Semiconductor Ltd. 100 Junction capacitance vs. Reverse voltage 2 Mar, 2017 - Rev. 1.1 WSB5543W PACKAGE OUTLINE DIMENSIONS SOD-323F D b E D1 TOP VIEW c A SIDE VIEW SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.60 - 1.10 c 0.08 0.13 0.18 b 0.25 - 0.40 D1 1.60 1.70 1.80 E 1.15 1.25 1.35 D 2.30 2.50 2.80 0.71 0.403 1.28 2.7 Land Pattern Recommendation Will Semiconductor Ltd. 3 Mar, 2017 - Rev. 1.1 WSB5543W TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 4 Q4 Mar, 2017 - Rev. 1.1