2SD1664

2SD1664 BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to 2SB1132  Low Collector-emitter saturation voltage  Surface Mount device SOT-89 MECHANICAL DATA      Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.055 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current Collector Power Dissipation IC 1 A PC 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Ma Parameter Symbol Min Typ Unit x Conditions Collector-base breakdown voltage V(BR)CBO 40 V IC=50uA，IE=0 Collector-emitter voltage V(BR)CEO 32 V IC=1mA，IB=0 V(BR)EBO 5 V IE=50uA，IC=0 breakdown Emitter-base breakdown voltage Collector cut-off current ICBO 0.5 uA VCB=20V, IE=0 Emitter cut-off current IEBO 0.5 uA VEB=4V, IC=0 DC current gain hFE Collector-emitter saturation voltage VCE=3V, IC=1mA 390 VCE(sat) Transition frequency Collector output capacitance 82 0.3 V fT 150 MHz Cob 15 pF IC=0.5A，IB=50mA VCE=5V,IC=50mA,f=100MHz VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking DAP DAQ DAR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1/4 2SD1664 BIPOLAR TRANSISTOR (NPN) Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 0.80mA 125 0.72mA Ta=100℃ 0.64mA 100 hFE —— IC 300 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 150 0.56mA 0.48mA 75 0.40mA 0.32mA 50 200 Ta=25℃ 100 0.24mA 25 0.16mA COMMON EMITTER VCE= 3V IB=0.08mA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VBEsat 1.2 —— VCE 8 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=100℃ 0.4 0.01 0.1 COLLECTOR CURRENT fT —— IC 1 (A) IC Ta=100℃ Ta=25℃ 0.01 0.1 COLLECTOR CURRENT IC IC 100 10 1E-3 1 0.1 β=10 (A) 1000 Cob / Cib IC 1 (A) VCB / VEB —— f=1MHz IE=0 / IC=0 300 Ta=25℃ CAPACITANCE C (pF) TRANSITION FREQUENCY fT (MHz) 500 VCEsat —— 1000 Ta=25℃ 0.0 1E-3 0.01 COLLECTOR CURRENT (V) β=10 0.8 0 1E-3 100 Cib 100 Cob 10 30 VCE=5V Ta=25℃ 10 3 10 100 COLLECTOR CURRENT PC COLLECTOR POWER DISSIPATION PC (mW) 600 —— IC 1 0.1 1 REVERSE VOLTAGE (mA) 10 V 20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 125 150 (℃ ) E-mail:hkt@heketai.com 2/4 2SD1664 BIPOLAR TRANSISTOR (NPN) SOT-89 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3/4 2SD1664 BIPOLAR TRANSISTOR (NPN) SOT-89 Tape and Reel SOT-89 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-89 4.85 4.45 1.85 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer SOT-89 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 13.20 16.50 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4/4