SLM21867CA-DG

SLM21867 600V High and Low Side Driver PRODUCT SUMMARY • • • • VOFFSET IO+/VOUT ton/off (typ.) FEATURES 600 V max. 4A/4A 7 V - 20 V 170ns / 170ns • • • • GENERAL DESCRIPTION • • • • • • • • The SLM21867 is a high voltage, high speed power MOSFET and IGBT drivers with independent highand low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V. Floating channel designed for bootstrap operation Fully operational to +600 V Low VCC operation Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 7 V to 20 V Undervoltage lockout for both channels 3.3 V, and 5 V logic compatible CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Outputs in phase with inputs RoHS compliant SOIC-8 package TYPICAL APPLICATION CIRCUIT up to 600V VCC VB HIN VCC HIN HO LIN LIN VS COM LO to load SLM21867 (Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout. Typical Application Circuit Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 1 SLM21867 PIN CONFIGURATION Package Pin Configuration (Top View) SOIC-8 1 VCC VB 8 2 HIN HO 7 3 LIN VS 6 4 COM LO 5 PIN DESCRIPTION No. Pin Description 1 VCC Low-side and logic fixed supply 2 HIN Logic input for high-side gate driver output (HO), in phase 3 LIN Logic input for low-side gate driver output (LO), in phase 4 COM Low-side return 5 LO Low-side gate drive output 6 VS High-side floating supply return 7 HO High-side gate drive output 8 VB High-side floating supply ORDERING INFORMATION Industrial Range: -40°C to +125°C Order Part No. Package QTY SLM21867CA-DG SLM21867CA-TG SOIC8, Pb-Free SOIC8, Pb-Free 2500/Reel 100/Tube Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 2 SLM21867 FUNCTIONAL BLOCK DIAGRAM VB VBS UVLO HIN VSS/COM LEVEL SHIFT Pulse Filter PULSE GENERATOR R R Q HO S VS VCC UVLO LO LIN VSS/COM LEVEL SHIFT DELAY COM SLM21867 Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 3 SLM21867 ABSOLUTE MAXIMUM RATINGS Symbol Definition VB High-side floating absolute voltage Min. -0.3 Max. 625 VS High-side floating supply offset voltage VB - 25 VB + 0.3 VHO High-side floating output voltage VS - 0.3 VB + 0.3 VCC Low-side and logic fixed supply voltage -0.3 25 VLO Low-side output voltage -0.3 VCC + 0.3 VIN Logic input voltage (HIN & LIN ) Allowable offset supply voltage transient -0.3 VCC + 0.3 --- 50 PDIP-8 --- 1.0 SOIC-8 --- 0.625 PDIP-8 --- 125 SOIC-8 --- 200 dVS/dt PD Package power dissipation @ TA ≤ +25°C RthJA Thermal resistance, junction to ambient TJ Junction temperature --- 150 TS Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) --- 300 Units V V/ns W °C/W °C Note: Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. RECOMMENDED OPERATIONG CONDITIONS Symbol Definition VB High-side floating absolute voltage Min. VS + 10 Max. VS + 20 VS High-side floating supply offset voltage Note 1 600 VHO High-side floating output voltage VS VB VCC Low-side and logic fixed supply voltage 10 20 VLO Low-side output voltage 0 VCC VIN Logic input voltage (HIN & LIN) COM VCC TA Ambient temperature - 40 125 Units V °C Note: The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at a 15 V differential. Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 4 SLM21867 DYNAMIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS, VDD) = 15 V, CL = 1000 pF and TA = 25°C unless otherwise specified. Symbol Parameter Condition Min. Typ. Max. ton Turn-on propagation delay VS = 0 V --- 170 250 toff Turn-off propagation delay VS = 600 V --- 170 250 tr Turn-on rise time --- 22 38 tf Turn-off fall time --- 18 30 Delay matching, HS & LS turn-on/off --- --- 35 MT Unit Ns STATIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS, VDD) = 15 V and TA = 25°C unless otherwise specified. The VIN, VTH, and IIN parameters are referenced to COM and are applicable to all three logic input leads: HIN and LIN. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol Parameter Condition Min. Typ. Max. 2.5 --- --- --- --- 0.8 --- --- 1.4 --- 0.02 0.15 --- --- 50 20 60 400 200 290 400 VIH Logic “1” input voltage VIL Logic “0” input voltage VOH High level output voltage, VBIAS - VO VOL Low level output voltage, VO ILK Offset supply leakage current IQBS Quiescent VBS supply current IQCC Quiescent VCC supply current IIN+ Logic “1” input bias current HIN=LIN = 5V --- 60 70 IIN- Logic “0” input bias current HIN=LIN= 0V --- --- 5 6.25 6.85 VCC = 7 V to 20V IO = 20 mA VB = VS = 600 V VIN = 0 V or 5 V VBSUV+ VBS supply undervoltage positive going threshold 5.65 VBSUV- VBS supply undervoltage negative going threshold 5.15 5.75 6.35 VCCUV+ VCC supply undervoltage positive going threshold 5.65 6.25 6.85 VCCUV- VCC supply undervoltage negative going threshold 5.15 5.75 3.0 4.0 IO+ IO- Output high short circuit pulsed current Output low short circuit pulsed current Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 Unit V µA V V VO = 0 V VIN = Logic “1” PW ≤ 10 µs VO = 15 V VIN = Logic “0” PW ≤ 10 µs 6.35 A 3.0 4.0 5 SLM21867 Switching and Timing Relationships The relationships between the input and output signals of the SLM21867 are illustrated below in Figures 1, 2. From these figures, we can see the definitions of several timing parameters (i.e., tON, tOFF, tR, and tF) associated with this device. Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 6 SLM21867 PACKAGE CASE OUTLINES PART MARKING INFORMATION Part Number Pin1 Identifier Internal Trace Code Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 Data Code 7 SLM21867 Revision History Note: page numbers for previous revisions may differ from page numbers in current version Page or Item Subjects (major changes since previous revision) Whole document Draft datasheet released Page 2 Page 7 Change order information Add part marking information Rev 0.1 datasheet, 2019-9-1 Rev 0.2 datasheet, 2020-1-14 Sillumin Semiconductor Co., Ltd. – www.sillumin.com Rev0.2, January 2020 8