SE150180G

SE150180G N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline Surface Mount Device  Features For a single MOSFET   VDS = 150V RDS(ON) = 4.4mΩ @ VGS=10V Pin configurations See Diagram below TO-247 TO-263 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 180 720 A EAS 3400 mJ PD 520 W TJ -55 to 175 ℃ 1. SE150180G Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=100V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 3 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=100A - Forward Transconductance VDS=10V, ID=100A gFS 150 V 1 μA 100 nA 3.9 5 V 4.4 5 mΩ 150 S 19500 pF 1100 pF 110 pF 314 nC 115 nC 80 nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=75V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=50V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=50V, 30 ns td(off) Turn-Off Delay Time RGEN=1.8Ω 95 ns td(r) Turn-On Rise Time ID=100A 85 ns td(f) Turn-Off Fall Time 38 ns ID=100A Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case(t≤10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 0.29 ℃/W 2. SE150180G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE150180G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE150180G Package Outline Dimension TO-247 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE150180G Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.