WNM6002-3/TR

WNM6002 W 2 WNM6002 Http//:www.sh-willsemi.com Single N-Channel, 60V, 0.30A, Power MOSFET VDS (V) 60 Rds(on) (Ω) D 1.4@ VGS=10V 1.7@ VGS=4.5V ESD Rating:2000V HBM S G Descriptions SOT-323 The WNM6 6002 is N-C Channel enhancement M MOS Field Effect Transistor. Usess advanced trench t techn nology and design to provide excellent RDS(ON)) with low ga ate charge. This device e is suitable e for use in n DC-DC co onversion, power swittch and cha arging circu uit. Standarrd Product WNM6002 is Pb-free and a Halogen n-free. D 3 1 G 2 S Pin configuration (Top view) Features 3  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-323 62* 2 1 62 = Device Code * = Month (A~Z) Marking Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Will Semico onductor Lttd. Order information Device Package Shipping WNM6002-3/TR SOT-323 3000/Reel&Tape 1 Oct, 201 19- Rev.1.1 WNM6002 Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID TA=70°C Maximum Power Dissipation Continuous Drain Current TA=25°C ad TA=25°C ad TA=70°C TA=25°C bd Maximum Power Dissipation PD ID TA=70°C TA=25°C bd PD TA=70°C Pulsed Drain Current c Unit V 0.30 0.28 0.24 0.22 0.37 0.31 0.23 0.20 0.27 0.24 0.21 0.19 0.29 0.23 0.18 0.14 A W A W IDM 1.0 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 245 335 325 395 375 430 445 535 260 300 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width