SD10U50SL

SD10U50SL 10A /45V Ultra Low VF Schottky Rectifier FEATURES MACHANICAL DATA — High current capability, low forward voltage — Excellent high temperature stability — Low power loss, and high efficiency — High forward surge capability — RoHS compliant, and Halogen free — Ca se: TO-277 small outline plastic package — Terminal: Matte tin plated, solderable per MIL-STD-750, Method 2026 — Molding Compound Flammability Rating:UL94-0 — High temperature soldering guaranteed: 260°C /10second — Packed with FRP substrate and epoxy underfilled ORDERING APPLICATIONS INFORMATION — Switching mode power supply applications — Portable equipment battery applications — High frequency rectification — DC/DC converter — Designed as bypass diodes for solar panels — Device: SD10U50SL — Package: TO-277 — Marking: 10U50 — Material: Halogen free — Packing: Tape & 13’’ Reel PACKAGE OUTLINE PIN CONFIGURATION ABSOLUTE MAXIMUM RATING (Tamb=25°C, unless otherwise specified) Symbol Parameter Value Units VRRM Repetitive Peak Reverse Voltage 50 V IF(AV) Average Forward Current 10 A IFSM Peak Forward Surge Current, 8.3ms single half sine-wave 275 A -50~+150 °C TJ & TSTG Revision:20181101-P2 Junction and Storage Temperature ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com SD10U50SL 10A /45V Ultra Low VF Schottky Rectifier ELECTRICAL CHARACTERISTICS (Tamb=25°C, unless otherwise specified) Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM SD10U50SL Unit 50 V VR(RMS) 35 V IF(AV) 10 A IFSM 275 A VDC DC blocking voltage RMS Rectified Voltage Average Rectified Output Current (Note1) Non-Repetitive Peak Forward Surge8.3ms Single Half Sine-Wave Superimposed on rated load(JEDEC Method) (Note2) I 2t 313.844 A2s VFM 0.45 V IR 0.3 15 mA Typical Thermal Resistance RθJA 31 Junctionto Ambient RθJL 15 I2t Rating for Fusing (t < 8.3ms) Forward Voltage Drop TA =25 ℃ @IF=10A Peak Reverse Curent TA =25℃ At Rated DC Blocking Voltage TA =100℃ Operating junction temperature range storage temperature range ℃/W TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case. 2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm. Revision:20181101-P2 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com SD10U50SL 10A /45V Ultra Low VF Schottky Rectifier ELECTRICAL CHARACTERISTICS CURVE Fig.2 :Instantaneous Forward Voltage IF(A) Fig.1 - Forward Current Derating Curve Average Forward Current,I F ( AV ) (A) 15 100 10 10 SD10U50SL 5 TA =25 single phase half wave 60Hz resistive or inductive load 0 5 50 0 5 1.0 00 0 25 5 50 0 ℃ 75 LEAD TEMPERATURE , T L ( °C) 0.1 0 0.2 0.4 0.6 0.8 1.0 VF(V) 360 Fig.4: Typical Reverse Characteristics IRRM(mA) IFSM(A) Fig.3: Surge Forward Current Capadility 300 100 10 ℃ 240 TA =100 180 1.0 120 0.1 ℃ 60 TA =25 0 1 2 10 20 100 Number of Cycles ht t p : // Revision:20181101-P2 0.01 0 20 www.lgesem i .c o m 40 60 80 100 VRM(%) mail:lge@lgesemi.com SD10U50SL 10A /45V Ultra Low VF Schottky Rectifier TO-277 PACKAGE OUTLINE DIMENSIONS FOOT PRINT RECOMMENDATION unit: mm PACKAGE INFORMATION Device SD10U50SL Revision:20181101-P2 Package Shipping TO-277 5000/Tape&Reel ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com