AOD409

AOD409 P-Channel MOSFET Transistor to r ·FEATURES ·TO-252( DPAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device uc performance and reliable operation co nd ·APPLICATIONS ·Power supply ·Switching applications PARAMETER VDSS Drain-Source Voltage VGSS Gate-Source Voltage VALUE UNIT -60 V ±20 V Se SYMBOL mi ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Drain Current-Continuous@TC=25℃ TC=100℃ -26 -18 A IDM Drain Current-Single Pulsed -60 A PD Total Dissipation 60 W Tj Operating Junction Temperature 175 ℃ -55~175 ℃ JS MI CR O ID Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.5 ℃/W Rth(ch-a) Channel-to-ambient thermal resistance 50 ℃/W www.jsmsemi.com 第１／２页 AOD409 P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA -60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=-0.25mA -1.2 RDS(on) Drain-Source On-Resistance VGS= -10V; ID=-20A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VSDF Diode forward voltage TYP MAX UNIT V to r SYMBOL V 40 mΩ ±0.1 μA VDS= -48V; VGS= 0V;Tj=25℃ Tj=55℃ -1 -5 μA ISD=-1A, VGS = 0 V -1 V 32 JS MI CR O Se mi co nd uc -2.4 www.jsmsemi.com 第２／２页