AO4407A

AO4407A 30V P-Channel Fast Switching MOSFET  FEATURE  DESCRIPTION The 4407A is the P-Channel logic enhancement  -30V/-13A, RDS(ON) = 9 mΩ (typ.)@VGS=-10V mode power field effect transistor is produced using  -30V/-7.0A, RDS(ON)< 14.5mΩ (typ.)@VGS=-4.5V high cell density advanced trench technology..  Super high design for extremely low RDS(ON) This high density process is especially tailored to  Exceptional on-resistance and Maximum DC current capability minimize on-state resistance.  Full RoHS compliance PWM and gate charge for most of the synchronous  SOP8 package design CR MI JS This device is suitable for use as a load switch or in buck converter applications  APPLICATIONS  Buck Converter for MB/NB/UMPC/GA O  Newworking DC-DC Power System  Load Switch  Power Management in Note Book c du on c mi Se  PIN CONFIGURATION High Frequency Point-of-Load Synchronous r to www.jsmsemi.com 第１／８页 AO4407A 30V P-Channel Fast Switching MOSFET  ORDERING INFROMATION Package Code CR MI JS Part Number AO4407A 4407A Package Shipping SOP8 3000EA / T&R ※ Year Code : 0~9 ※ Week Code : A~Z(1-26); a~z(27~52) ※ G : Green Product. This product is RoHS compliant. O  ABSOLUTE MAXIMUM RATINGS ( TA = 25℃ Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID c mi Se Symbol Unless otherwise noted ) Continuous Drain Current (TA=25℃) Pulsed Drain Current IS Continuous Source Current (Diode Conduction) PD Power Dissipation TJ Operation Junction Temperature Thermal Resistance Junction to Ambient V ±20 V -13 A -9.5 A -40 A -2.0 A TA=25℃ 2.0 TA=70℃ 1.5 W 150 ℃ -55~+150 ℃ r to RθJA -30 c du on IDM Storage Temperature Range Unit VGS=10V Continuous Drain Current (TA=70℃) TSTG Typical ℃/W 85 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress rating only and functional device operation is not implied  ELECTRICAL CHARACTERISTICS(TA=25℃ Unless otherwise noted) www.jsmsemi.com 第２／８页 AO4407A 30V P-Channel Fast Switching MOSFET Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current -30 -1.0 V -1.4 -2.0 V VDS=0V, VGS=±25V ±100 nA VDS=-30V, VGS=0 -1 VDS=-30V, VGS=0 -5 TJ=55℃ VGS=-10V, ID=-10A 9 13 CR MI JS VGS=-4.5V, ID=-7.0A 14.5 17 IS=-2.3A, VGS=0V -0.75 -1.0 Total Gate Charge VDS=-15V 30 42 Qgs Gate-Source Charge VGS=-4.5V 10 14 Qgd Gate-Drain Charge ID=-10A 10.4 14.6 Ciss Input Capacitance VDS=-15V 2050 2730 Coss Output Capacitance VGS=0V 506 710 Crss Reverse Transfer Capacitance f=1MHz 420 590 VDS=-15V 9.3 19 ID=-10A 10.2 18 VGEN=-10V 117 232 RG=3.3Ω 24 46 RDS(ON) Drain-Source On-Resistance uA mΩ Source-Drain Diode VSD Diode Forward Voltage V Dynamic Parameters Tr Tf c du on Td(off) Turn-On Time c mi Se Td(on) O Qg Turn-Off Time nC pF nS Note: 1. Pulse test: pulse width