PESD12VS2UT-N

PESD12VS2UT-N ESD Protection Diode Array »Features ■ 300 Watts peak pulse power (tp = 8/20μs) ■ Bidirectional and unidirectionalconfigurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=60 pF typ.) ■ Protection two data lines ■ IEC 61000-4-2 ±30kV contact ±30kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 12A(8/20μs) »Mechanical Data »Applications ■ Dataline ■ SOT23-3L package ■ Automatic Teller Machines ■ Molding compound flammability rating: UL 94V-0 ■ Net works ■ Packaging: Tape and Reel ■ Power line ■ RoHS/WEEE Compliant »Schematic & PIN Configuration 1 1 3 3 2 2 SOT-23 (Top View) Revision 2018 www.born-tw.com 1/4 PESD12VS2UT-N »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 300 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 12 A VESD 30 30 kV Lead SolderingTemperature TL 260(10seconds) ℃ JunctionTemperature TJ -55 to + 125 ℃ StorageTemperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-OffVoltage Conditions Min Typical Max Units 12 V 15 17 V 0.5 1 μA VRWM VBR IT=1mA Reverse LeakageCurrent IR VRWM=12V,T=25℃ Peak PulseCurrent IPP tp =8/20μs 10 A Clamping Voltage VC IPP=12A,tp=8/20μs 30 V JunctionCapacitance Cj VR = 0V, f =1MHz (Pin1、Pin2 to Pin3) 65 pF Reverse BreakdownVoltage 13.3 60 »Electrical Parameters (TA = 25°C unless otherwisenoted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP V RW M IR V BR IT I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RW M VC VBR VRWM IR VF IT Breakdown Voltage @ IT V Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 PESD12VS2UT-N »TypicalCharacteristics Figure 2: Power Derating Curve 10 110 100 Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(KW) Figure 1: Peak Pulse Power vs. Pulse Time 360w 8/20μs waveform 1 0.1 0.01 0.1 1 10 100 90 80 70 60 50 40 30 20 10 0 1,000 td – Pulse Duration - µs Figure3: Pulse Waveform Percent Ipp 80 e-1 50 40 td=Ipp/2 20 100 125 150 40 Clamping Voltage–VC (V) 90 30 75 45 Waveform Paramters tr=8µs td=20µs 100 60 50 Ambient Temperature - TA (℃) Figure 4: Clamping Voltage vs.Ipp 110 70 25 0 35 30 25 20 Test Waveform Paramters tr=8µs td=20µs 15 10 5 10 0 0 0 5 10 15 Time (µs) 20 25 30 0 2 4 6 8 10 12 Peak Pulse Current–IPP (A) Figure 5: Peak Pulse Power Vs JunctionTemperature 1000 IRM(nA) 100 10 1 0.1 -75 -25 25 75 125 175 Tamb（℃） Revision 2018 www.born-tw.com 3/4 PESD12VS2UT-N »Outline Drawing – SOT23-3L D 3 DIMENSIONS SYMBOL E1 E 1 θ 2 L e b A A2 INCHES MAX MIN MAX A 0.89 1.13 0.035 0.044 A1 0.015 0.11 0.0006 0.0043 A2 0.60 0.70 0.0236 0.0275 0.1228 D 2.72 3.12 0.1070 E 2.60 3.00 0.1024 0.118 E1 1.40 1.80 0.0551 0.0709 e A1 MILLIMETER MIN 0.25 0.95 BSC 0.0374 BSC L 0.30 0.60 0.0118 0.0236 θ 0 8 0 8。 。 »Marking AM2 »Ordering information Order code PESD12VS2UT-N Revision 2018 Package SOT23-3L Base qty 3k www.born-tw.com Delivery mode Tape and reel 4/4