AGM30P10S

AGM30P10S  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS RDSON -30V ID 12mΩ -14A SOP-8 Pin Configuration D DD Description AGM30P10S is the high cell density trenched P-ch MOSFETs, which provide excellentRDSON and gate charge for most of the synchronous buck converter applications. S G S S Package Marking and Ordering Information Device Marking Device AGM30P10S AGM30P10S Device Package 3000 ---mm ---mm SOP-8 Quantity Tape width Reel Size ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -14 A IDM -30 A PD@TC=25℃ 3.6 W PD@TA=25℃ 0.69 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 100 mJ Continuous Drain Current(TC=25℃) ① Pulsed Drain Current Total Power Dissipation ② Total Power Dissipation Operating Junction Temperature ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 34 °C/W Thermal resistance, junction - ambient RthJA - - 180 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Parameter ② www.agm-mos.com 1 VER2.5 AGM30P10S ●Electronic Characteristics Parameter Symbol Condition Min. Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =-250uA -30 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -1.2 Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) Forward Transconductance gFS Typ Max. Unit V -2.5 V VDS=-30V, VGS =0V -1.0 uA VGS=±12V ,VDS =0V ±100 nA 16 mΩ VGS=-10V, ID=-9A 12 VGS=-4.5V, ID=-8A 18 VDS =-10V, ID=-5A 9 23 mΩ s ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition f = 1MHz Min. Typ Max. - 1650 - - 330 - - 220 - Unit pF ●Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD =25V - 15 - Gate - Source charge Qgs ID = 8A - 4 - Gate - Drain charge Qgd VGS = 10V - 6 - Unit nC Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； www.agm-mos.com 2 VER2.5 AGM30P10S Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 VGS=-10V 40 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 30 VGS=-4.5V 20 10 0.2 0 0 0 0 50 100 150 Temperature (。C) Junction Temperature 50 1 Drain-Source voltage (V) 200 Fig.3 Threshold Voltage V.S Junction Temperature -50 0.5 Fig.4 Resistance V.S Drain Current 30 150 ON Resistance 0 Vgs(th )d -0.5 -1 20 10 -1.5 0 -2 0 20 30 40 Drain Current(A) -2.5 Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature 30 1.5 Normalized ON-Resistance RDson(mΩ) 10 20 10 0 1 0.5 3 5 7 9 -50 VGS( -V ) www.agm-mos.com 0 50 100 150 Temperature 3 VER2.5 AGM30P10S Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.5 AGM30P10S ●Dimensions(SOP8) SYMBOL min A A1 TYP max SYMBOL min max 4.80 5.00 C 1.30 1.50 0.37 0.47 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.19 B 5.80 6.20 C4 B1 3.80 4.00 D B2 www.agm-mos.com 5.00 D1 5 0.20 0.23 1.05 0.40 0.62 VER2.5 AGM30P10S Disclaimers: Information furnished in this document is believed to be accurate and reliable. However, Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Shenzhen core control source complies with the agreement. Products and information provided in this document have no infringement of patents. Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the first version which is made in 12-Apr-20. This document supersedes and replaces all information previously supplied. is a registered trademark of Shenzhen Core Control Source Semiconductor Co., Ltd. Copyright ©2017 Shenzhen Core Control Source Semiconductor Co., Ltd. Printed All rights reserved. www.agm-mos.com 6 VER2.5