AGM308S

AGM308S  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS RDSON 30V ID 6.5mΩ 13A SOP-8 Pin Configuration D DD Description AGM308S is the high cell density trenched N-ch MOSFETs, which provide excellentRDSON and gate charge for most of the synchronous buck converter applications. S G SS Package Marking and Ordering Information Device Device Marking AGM308S Device Package AGM308S Reel Size 3000 ---mm ---mm SOP-8 Quantity Tape width ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit VDS 30 V VGS ±20 V ID 13 A IDM 32 A PD@TC=25℃ 3.1 W PD@TA=25℃ 0.69 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy@L=0.1mH EAS 43 mJ Avalanche Current@L=0.1mH IAS 28 A Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current ② ① Total Power Dissipation ② Total Power Dissipation Operating Junction Temperature ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 40 °C/W Thermal resistance, junction - ambient RthJA - - 180 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Parameter www.agm-mos.com 1 VER2.6 AGM308S ●Electronic Characteristics Parameter Symbol Condition Min. Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.2 Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) Forward Transconductance gFS Typ Max. Unit V 2.5 V VDS=30V, VGS =0V 1.0 uA VGS=±20V ,VDS =0V ±100 nA VGS=10V, ID=12A 6.5 VGS=4.5V, ID=6A 10 VDS =25V, ID=10A 9 9.5 mΩ 14 mΩ s ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition f = 1MHz Min. Typ Max. - 980 - 205 - - 120 - Unit pF Gate Charge characteristics(Ta= 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD =25V - 12 - Gate - Source charge Qgs ID = 8A - 4 - Gate - Drain charge Qgd VGS = 10V - 6 - Unit nC Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； www.agm-mos.com 2 VER2.6 AGM308S Fig.2 Typical output Characteristics Fig.1 Power Dissipation VGS=10V VGS=4.5V Fig.3 Threshold Voltage V.S Junction Temperature Fig.6 On-Resistance V.S Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage www.agm-mos.com Fig.4 Resistance V.S Drain Current 3 VER2.6 AGM308S AGM310S Fig.8 Gate Charge Waveform Fig.7 Switching Time Measurement Circuit Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.12 Avalanche Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com 4 VER2.6 AGM308S ●Dimensions(SOP8) SYMBOL min A A1 TYP max SYMBOL min max 4.80 5.00 C 1.30 1.50 0.37 0.47 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.19 B 5.80 6.20 C4 B1 3.80 4.00 D B2 www.agm-mos.com 5.00 D1 5 0.20 0.23 1.05 0.40 0.62 VER2.6 AGM308S Disclaimers: Information furnished in this document is believed to be accurate and reliable. However, Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Shenzhen core control source complies with the agreement. Products and information provided in this document have no infringement of patents. Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the first version which is made in 12-Apr-21. This document supersedes and replaces all information previously supplied. is a registered trademark of Shenzhen Core Control Source Semiconductor Co., Ltd. Copyright ©2017 Shenzhen Core Control Source Semiconductor Co., Ltd. Printed All rights reserved. www.agm-mos.com 6 VER2.6