AGM056N10A

AGM056N10A Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology BVDSS RDSON ID 4.7mΩ 100A 100V PRPAK5X6 Pin Configuration Description AGM056N10A is the high cell density trenched N-ch MOSFETs, which provide excellentRDSON and gate charge for most of the synchronous buck converter applications. Package Marking and Ordering Information Device Marking AGM056N10A Device Device Package AGM056N10A DFN5*6 Reel Size Tape width 325mm 16mm Quantity 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG Value Unit 100 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 100 A Drain Current-Continuous(Tc=100℃) 75 A Drain Current-Continuous@ Current-Pulsed (Note 2) 300 A Maximum Power Dissipation(Tc=25℃) 123 w Maximum Power Dissipation(Tc=100℃) 63 W Avalanche energy (Note 3) 120 mJ -55 To 150 ℃ Typ Max Unit --- 55 ℃/W --- 1.1 ℃/W Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case 1 1 VER2.2 AGM056N10A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=80V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.5 v VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 100 1.2 V 1.6 VDS=5V,ID=20A 85 S VGS=10V, ID=20A 4.7 6.5 mΩ VGS=4.5V, ID=15A 6.5 8.5 mΩ Dynamic Characteristics 3100 pF 605 pF 20 pF 1.7 Ω 10 nS 6.5 nS Turn-Off Delay Time 45 nS tf Turn-Off Fall Time 7.5 nS Qg Total Gate Charge 43 nC Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 9.5 nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=50V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=50V, ID=14A,RGEN=3.3 VGS=10V, VDS=50V, ID=12A Source-Drain Diode Characteristics 80 A VGS=0V,IS=20A 1.0 V Reverse Recovery Time IF=15A , dI/dt=100A/µs , 30 ns Reverse Recovery Charge ·TJ=25℃ 148 nc IS Continuous Source Current VSD Forward on Voltage trr Qrr VG=VD=0V , Force Current Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=50V,VG=10V, RG=3.3Ω www.agm-mos.com 2 VER2.2 AGM056N10A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source-Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.agm-mos.com 3 VER2.2 AGM056N10A Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform www.agm-mos.com 4 VER2.2 AGM056N10A ●Dimensions（DFN5×6） www.agm-mos.com 5 VER2.2 AGM056N10A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.2