AGM405Q

AGM405Q Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology BVDSS RDSON 40V 5.7mΩ ID 55A PRPAK5X6 Pin Configuration Description AGM405Q is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Package Marking and Ordering Information Device Marking AGM405Q Device AGM405Q Device Package Reel Size DFN5*6 Tape width ---mm Quantity ---mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 40 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 55 A Drain Current-Continuous(Tc=100℃) 33 A 65 A Maximum Power Dissipation(T c=25℃) 45 W Maximum Power Dissipation(T c=100℃) 27 W Avalanche energy (Note 3) 50 mJ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 ℃ Table 2. Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 4.5 ℃/W www.agm-mos.com 1 REV2.6 AGM405Q Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.2 V VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 40 1.2 V 1.6 VDS=5V,ID=20A 10 S VGS=10V, ID=20A 5.7 8.0 mΩ VGS=4.5V, ID=15A 9.5 14 mΩ Dynamic Characteristics Ciss Input Capacitance pF 685 VDS=15V,VGS=0V, f=1.0MHz 190 pF 37 pF 1.7 Ω 13.9 nS 5.7 nS Turn-Off Delay Time 20 nS tf Turn-Off Fall Time 11 nS Qg Total Gate Charge 5.7 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 1.2 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3.3 VGS=10V, VDS=25V, ID=12A Source-Drain Diode Characteristics IS VSD Continuous Source Current VG=VD=0V , Force Current 55 A VGS=0V,IS=20A 1.0 V Forward on Voltage Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 REV2.6 AGM405Q Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ Data and specifications subject to change without notice. www.agm-mos.com 3 REV2.6 AGM405Q Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform Data and specifications subject to change without notice. www.agm-mos.com 4 REV2.6 H D2 D L1 AGM405Q k L E2 E E1 L2 D1 e b A2 d SYMBOL A MILLIMETER MIN Typ. MAX 0.900 1.000 1.100 A1 0.254 REF. A A1 A2 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 1.100 d www.agm-mos.com 5 1.200 1.300 0.100 REV2.6 AGM405Q Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2021. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 REV2.6