AGM60P40D
● General Description
Product Summary
The AGM60P40D combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low RDS(ON) . This device is ideal
for load switch and battery protection applications.
● Features
BVDSS
RDSON
-60V
23mΩ
ID
-45A
TO-252 Pin Configuration
■ Advance high cell density Trench technology
■Low RDS(ON) to minimize conductive loss
D
■Low Gate Charge for fast switching
■Low Thermal resistance
●Application
■MB/VGA Vcore
D
■SMPS 2nd Synchronous Rectifier
S
G
■POL application
■BLDC Motor driver
Package Marking and Ordering Information
Device Marking
AGM60P40D
Device
Device Package
AGM60P40D
TO-252
Reel Size
Tape width
----mm
----mm
Quantity
2500
●Absolute Maximum Ratings(TC =25℃)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current(TC=25℃)
ID
-45
A
Pulsed Drain Current
IDM
-76
A
①
Total Power Dissipation(TC=25℃)
PD@TC=25℃
51.1
W
Total Power Dissipation(TA=25℃)
PD@TA=25℃
2
W
Operating Junction Temperature
TJ
-55 to 150
℃
Storage Temperature
TSTG
-55 to 150
℃
Single Pulse Avalanche Energy
EAS
112
mJ
Table 2. Thermal Characteristic
Symbol
RθJA
RθJC
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Parameter
Typ
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case
1
1
Max
Unit
---
62
℃/W
---
2.4
℃/W
VER2.4
AGM60P40D
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbo
l
Parameter
Conditions
Min
-60
Typ Max
Unit
On/Off States
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=-250μA
IDSS
Zero Gate Voltage Drain Current
VDS=-30V,VGS=0V
-1
μA
IGSS
Gate-Body Leakage Current
VGS=±25V,VDS=0V
±100
nA
Gate Threshold Voltage
VDS=VGS,ID=-250μA
-2.5
V
VGS(th)
gFS
RDS(ON)
Forward Transconductance
VDS=-5V,ID=-6A
-1
V
-1.6
23
S
VGS=-10V, ID=-15A
30
mΩ
VGS=-4.5V, ID=-6A
38
mΩ
Drain-Source On-State Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Td(on)
Turn-On Delay Time
tr
Turn-on Rise Time
td(off)
Turn-Off Delay Time
VDS=-30V,VGS=0V,
f=1.0MHz
VDD=-30V,ID=-1A,RL=15Ω
VGS=-10V,RG=2.5Ω
3450
pF
222
pF
147
pF
38
nS
23
nS
100
nS
tf
Turn-Off Fall Time
6.8
nS
Qg
Total Gate Charge
25
nC
Qgs
Gate-Source Charge
6.8
nC
Qgd
Gate-Drain Charge
5.5
nC
VGS=-10V, VDS=-15V, ID=-12A
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
VSD
Forward on Voltage
VGS=0V,IS=-6A
-45
A
-1.2
V
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
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2
VER2.4
AGM60P40D
Typical Characteristics
30
12
ID=-12A
28
VGS=-10V
8
RDSON (mΩ)
-ID Drain Current (A)
10
VGS=-7V
26
VGS=-5V
6
VGS=-4.5V
24
4
22
VGS=-3V
2
0
20
0
0.25
0.5
0.75
-VDS Drain-to-Source Voltage (V)
1
2
4
Fig.1 Typical Output Characteristics
6
8
-VGS (V)
10
Fig.2 On-Resistance v.s Gate-Source
12
10
VDS=-20V
-VGS Gate to Source Voltage (V)
-IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
ID=-12A
8
6
4
2
0
0
1
Fig.3 Forward Characteristics Of Reverse
40
60
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
1.5
Normalized -VGS(th)
20
QG , Total Gate Charge (nC)
-VSD , Source-to-Drain Voltage (V)
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
Fig.5 Normalized VGS(th) v.s TJ
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0
50
100
150
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON v.s TJ
3
VER2.4
AGM60P40D
10000
100.00
F=1.0MHz
100us
Ciss
Capacitance (pF)
10.00
1000
-ID (A)
1ms
100
10ms
1.00
Coss
100ms
DC
Crss
0.10
Tc=25o C
Single Pulse
0.01
10
1
5
9
13
17
-VDS Drain to Source Voltage(V)
21
0.1
25
1
10
-VDS (V)
100
1000
Fig.8 Safe Operating Area
Fig.7 Capacitance
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
PDM
T
0.01
D = TON/T
SINGLE PULSE
0.01
0.00001
TON
0.0001
TJpeak = TC + PDM x RθJC
0.001
0.01
0.1
1
t , Pulse Width (s)
(Amds)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
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Fig.11 Unclamped Inductive Waveform
4
VER2.4
AGM60P40D
Typical Characteristics (cont.)
Output Characteristics
Drain-Source On Resistance
20
70
RDS(ON) - On Resistance (mΩ)
-ID - Drain Current (A)
18
16
VGS= -4,-5,-6,-7,-8,-9,-10V
14
12
10
8
6
-3V
4
2
-2V
0
0.0
0.2
0.4
0.6
0.8
65
60
55
VGS= - 10V
50
45
40
1.0
VGS= - 4.5V
0
2
-VDS - Drain-Source Voltage (V)
8
10
12
14
16
Gate Threshold Voltage
1.6
200
Normalized Threshold Voltage
IDS = -10A
RDS(ON) - On Resistance (mΩ)
6
-ID - Drain Current (A)
Transfer Characteristics
175
150
125
100
75
50
25
4
1
2
3
4
5
6
7
8
9
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
10
0
25
50
75 100 125 150
Tj - Junction Temperature (℃)
-VGS - Gate-Source Voltage (V)
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IDS =-250A
5
VER2.4
AGM60P40D
●Dimensions
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SYMBOL
min
max
SYMBOL
min
max
A
2.10
2.50
B
0.85
1.25
b
0.50
0.80
b1
0.50
0.90
b2
0.45
0.70
C
0.45
0.70
D
6.30
6.75
D1
5.10
5.50
E
5.30
6.30
e1
2.25
2.35
L1
9.20
10.60
e2
4.45
4.75
L2
0.90
1.75
L3
0.60
1.10
K
0.00
0.23
6
VER2.4
AGM60P40D
Disclaimers:
Information furnished in this document is believed to be accurate and reliable.
However,
Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for
the consequences of
use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that
when an agreement is signed, Shenzhen core control source complies with the
agreement.
Products and information provided in this document have no infringement of patents.
Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for
any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the first version which is made in 12-Apr-21. This document
supersedes and
replaces all information previously supplied.
is a registered trademark of Shenzhen Core Control Source
Semiconductor Co., Ltd.
Copyright ©2018 Shenzhen Core Control Source Semiconductor Co., Ltd. Printed All
rights reserved.
www.agm-mos.com
6
VER2.4
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