AGM60P40D

AGM60P40D ● General Description Product Summary The AGM60P40D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON -60V 23mΩ ID -45A TO-252 Pin Configuration ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss D ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore D ■SMPS 2nd Synchronous Rectifier S G ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM60P40D Device Device Package AGM60P40D TO-252 Reel Size Tape width ----mm ----mm Quantity 2500 ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current(TC=25℃) ID -45 A Pulsed Drain Current IDM -76 A ① Total Power Dissipation(TC=25℃) PD@TC=25℃ 51.1 W Total Power Dissipation(TA=25℃) PD@TA=25℃ 2 W Operating Junction Temperature TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 112 mJ Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case 1 1 Max Unit --- 62 ℃/W --- 2.4 ℃/W VER2.4 AGM60P40D Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbo l Parameter Conditions Min -60 Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA IDSS Zero Gate Voltage Drain Current VDS=-30V,VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=-250μA -2.5 V VGS(th) gFS RDS(ON) Forward Transconductance VDS=-5V,ID=-6A -1 V -1.6 23 S VGS=-10V, ID=-15A 30 mΩ VGS=-4.5V, ID=-6A 38 mΩ Drain-Source On-State Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Td(on) Turn-On Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time VDS=-30V,VGS=0V, f=1.0MHz VDD=-30V,ID=-1A,RL=15Ω VGS=-10V,RG=2.5Ω 3450 pF 222 pF 147 pF 38 nS 23 nS 100 nS tf Turn-Off Fall Time 6.8 nS Qg Total Gate Charge 25 nC Qgs Gate-Source Charge 6.8 nC Qgd Gate-Drain Charge 5.5 nC VGS=-10V, VDS=-15V, ID=-12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-6A -45 A -1.2 V Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature www.agm-mos.com 2 VER2.4 AGM60P40D Typical Characteristics 30 12 ID=-12A 28 VGS=-10V 8 RDSON (mΩ) -ID Drain Current (A) 10 VGS=-7V 26 VGS=-5V 6 VGS=-4.5V 24 4 22 VGS=-3V 2 0 20 0 0.25 0.5 0.75 -VDS Drain-to-Source Voltage (V) 1 2 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics Of Reverse 40 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.agm-mos.com 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ 3 VER2.4 AGM60P40D 10000 100.00 F=1.0MHz 100us Ciss Capacitance (pF) 10.00 1000 -ID (A) 1ms 100 10ms 1.00 Coss 100ms DC Crss 0.10 Tc=25o C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 1 10 -VDS (V) 100 1000 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) （Amds） Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.agm-mos.com Fig.11 Unclamped Inductive Waveform 4 VER2.4 AGM60P40D Typical Characteristics (cont.) Output Characteristics Drain-Source On Resistance 20 70 RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 18 16 VGS= -4,-5,-6,-7,-8,-9,-10V 14 12 10 8 6 -3V 4 2 -2V 0 0.0 0.2 0.4 0.6 0.8 65 60 55 VGS= - 10V 50 45 40 1.0 VGS= - 4.5V 0 2 -VDS - Drain-Source Voltage (V) 8 10 12 14 16 Gate Threshold Voltage 1.6 200 Normalized Threshold Voltage IDS = -10A RDS(ON) - On Resistance (mΩ) 6 -ID - Drain Current (A) Transfer Characteristics 175 150 125 100 75 50 25 4 1 2 3 4 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (℃) -VGS - Gate-Source Voltage (V) www.agm-mos.com IDS =-250A 5 VER2.4 AGM60P40D ●Dimensions www.agm-mos.com SYMBOL min max SYMBOL min max A 2.10 2.50 B 0.85 1.25 b 0.50 0.80 b1 0.50 0.90 b2 0.45 0.70 C 0.45 0.70 D 6.30 6.75 D1 5.10 5.50 E 5.30 6.30 e1 2.25 2.35 L1 9.20 10.60 e2 4.45 4.75 L2 0.90 1.75 L3 0.60 1.10 K 0.00 0.23 6 VER2.4 AGM60P40D Disclaimers: Information furnished in this document is believed to be accurate and reliable. However, Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Shenzhen core control source complies with the agreement. Products and information provided in this document have no infringement of patents. Shenzhen Core Control Source Semiconductor Co., Ltd. assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the first version which is made in 12-Apr-21. This document supersedes and replaces all information previously supplied. is a registered trademark of Shenzhen Core Control Source Semiconductor Co., Ltd. Copyright ©2018 Shenzhen Core Control Source Semiconductor Co., Ltd. Printed All rights reserved. www.agm-mos.com 6 VER2.4