AGM306AP

AGM306AP Product Summary  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology BVDSS RDSON 30V 5.8mΩ ID 46A PRPAK3.3X3.3 Pin Configuration Description AGM306AP is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Package Marking and Ordering Information Device Marking AGM306AP Device AGM306AP Device Package Reel Size Tape width Quantity DFN3.3*3.3 ---mm ---mm 5000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 46 A Drain Current-Continuous(Tc=100℃) 29 A 92 A Maximum Power Dissipation(T c=25℃) 45 W Maximum Power Dissipation(T c=100℃) 29 W Avalanche energy (Note 3) 67 mJ -55 To 150 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 1 Max Unit --- 63 ℃/W --- 6.2 ℃/W VER2.5 AGM306AP Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.2 V VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 30 1.2 V 1.4 VDS=5V,ID=20A 10 S VGS=10V, ID=20A 5.7 8.5 mΩ VGS=4.5V, ID=15A 9.5 13 mΩ Dynamic Characteristics Ciss Coss Rg VDS=15V,VGS=0V, F=1MHZ Output Capacitance Crss Reverse Transfer Capacitance Gate resistance pF 1070 Input Capacitance pF 163 pF 110 VGS=0V, VDS=0V,f=1.0MHz 1.7 Ω 4.5 nS 10.8 nS Turn-Off Delay Time 22.5 nS tf Turn-Off Fall Time 9.6 nS Qg Total Gate Charge 12.8 nC Qgs Gate-Source Charge 3.3 nC Qgd Gate-Drain Charge Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=12V, RL=0.75,RGEN=3.3 VGS=4.5V, VDS=20V, ID=12A 6.5 nC Source-Drain Diode Characteristics IS Continuous Source Current VSD Forward on Voltage VG=VD=0V , Force Current VGS=0V,IS=20A 46 A 1.0 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.5 AGM306AP Typical Characteristics 12 12 ID=12A VGS=10V VGS=7V 10 11 VGS=4.5V 8 RDSON (mΩ) ID Drain Current (A) VGS=5V VGS=3V 6 9 4 8 2 6 0 0 0.25 0.5 2 0.75 4 6 8 10 VGS (V) VDS Drain-to-Source Voltage (V) Voltage Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 10 12 VDS=20V VGS , Gate to Source Voltage (V) IS -Source Current(A) 10 8 TJ=150℃ TJ=25℃ 6 4 2 ID=12A 8 6 4 2 0 0 0 0.3 0.6 0 0.9 Fig.3 Forward Characteristics Of Reverse diode 12 18 24 30 Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 6 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON DSON vs. TJ J Data and specifications subject to change without notice. www.agm-mos.com 3 VER2.5 AGM306AP 10000 100.00 10us 100us F=1.0MHz 10.00 1ms 10ms ID (A) Capacitance (pF) Ciss 1000 Coss 100ms 1.00 DC 100 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 VDS , Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.agm-mos.com 4 VER2.5 AGM306AP PDFN3333 Package Outline Data DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.70 0.75 0.80 b 0.25 0.30 0.35 C 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- E 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 H 0.30 0.39 0.50 0.65BSC e L 0.30 0.40 0.50 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 *Not specified www.agm-mos.com 5 VER2.5 AGM306AP Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2020. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5