AGM312M1

AGM312M1 ● General Description The AGM312M1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features Product Summary ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ID BVDSS RDSON 30V 18mΩ 9.0A -30V 30mΩ -7.2A SOP-8 Pin Configuration ■Low Gate Charge for fast switching ■Low Thermal resistance D1 D1 ●Application D2 ■MB/VGA Vcore S1 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver D1 G1 G1 S2 D2 D2 G2 G2 S1 S2 Package Marking and Ordering Information Device Marking AGM312M Device Device Package Tape width 325mm SOP-8 AGM312M1 Reel Size Quantity 16mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol Parameter N-Ch P-Ch 30 -30 V Units VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ±20 ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 9.0 -7.2 A Drain Current-Continuous(Tc=100℃) 5.7 -4.7 A Drain Current-Continuous@ Current-Pulsed (Note 2) 24 -19 A Total Power Dissipation(Tc=25℃) 5 5 W Total Power Dissipation(TA=100℃) 0.2 0.2 W Avalanche energy (Note 3) 25 25 mJ -55 To 150 -55 To 150 ℃ ID IDM (pluse) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 RθJC Thermal Resistance Junction-Case1 www.agm-mos.com Typ Max Unit --- 62 ℃/W 24 ℃/W --- 1 VER2.4 AGM312M1 ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.5 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 10 -- 18 29 -- 22 32 gfs -- 13 -- Qg -- 4.1 -- Qgs -- 1 -- Qgd -- 2.1 -- Ciss -- 370 -- Coss -- 55 -- Crss -- 32 -- td(on) -- 2.8 -- tr -- 7.2 -- td(off) -- 15.8 -- tf -- 4.6 -- Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS = 30V, VGS = 0V VDS = 24V, Tc = 125ºC VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 5V, ID = 6A IDSS RDS(on) µA mΩ S (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15V, ID = 8A, VGS = 4.5V Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 25V, VGS = 0V, f = 1.0MHz nC pF (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 15V, ID = 1A, Turn-Off Delay Time RGEN =6Ω Turn-Off Fall Time ns Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 17A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o www.agm-mos.com 2 VER2.4 AGM312M1 N- Channel Typical Electrical and Thermal Characteristics (Curves) ●Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 34 °C/W Thermal resistance, junction - ambient RthJA - - 180 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Min. Typ Max. Unit ●Electronic Characteristics Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =-250uA -30 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -1.2 Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) Forward Transconductance Source-drain voltage V -2.5 V VDS=-30V, VGS =0V -1.0 uA VGS=±12V ,VDS =0V ±100 nA VGS=-10V, ID=-20A 31 42 mΩ VGS=-4.5V, ID=-10A 39 56 mΩ gFS VDS =-10V, ID=-5A 6 VSD Is=-20A s 1.28 V Unit ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition f = 1MHz Min. Typ Max. - 850 - - 140 - - 103 - pF ●Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD =25V - 13 - Gate - Source charge Qgs ID = 2A - 7 - Gate - Drain charge Qgd VGS = 10V - 2 - www.agm-mos.com 3 Unit nC VER2.4 AGM312M1 N-CH Electrical Characteristics (TJ=25 ℃, unless otherwise 25 20 20 ID , Drain Current (A) ID , Drain Current (A) VGS= 5~10V VGS 4V 15 10 5 16 12 8 4 VGS 3V 0 0 1 2 3 4 5 0 6 3 4 6 5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(on) , Normalized On-Resistance BVDSS , Normalized Gate-Source Breakdown Voltage 2 VGS , Gate-to-Source Voltage (V) ID= 250uA 1.075 1.05 1.025 1 0.975 0.95 -25 0 25 50 75 100 2 1.75 VG = 10V ID= 6.9A 1.5 1.25 1 0.75 0.5 0.25 -50 125 -25 0 25 50 75 100 125 T j , Junction Temperature (°C) T j , Junction Temperature (°C) Figure 3. Breakdown Voltage Variation with Temperature Figure 4. On-Resistance Variation with Temperature VGS , Gate to Source Voltage (V) ID= 250uA Vth , Normalized Gate-Source Threshold Voltage 1 VDS , Drain-to-Source Voltage (V) 1.1 0.925 -50 0 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 VDS= 10V ID= 1A 6 4 2 0 125 0 2 4 6 8 T j , Junction Temperature (°C) Qg , Total Gate Charge (nC) Figure 5. Gate Threshold Variation with Temperature Figure 6. Gate Charge www.agm-mos.com 4 10 VER2.4 AGM312M1 20 IS , Source-Drain Current (A) 40 ID , Drain Current (A) 20 10 0.001 2S 0.01S 1 0.1S 0.1 VGS= 10V 10 DC Single Pulse TA=25º C 1 0.04 0.1 0.5 1 10 3 0.75 30 50 VDS , Drain-Source Voltage (V) Figure 7. Maximum Safe Operating Area 0.93 1.0 1.06 1.11 VSD , Body Diode Forward Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current VDD VDS 90% RL D 0.85 Vout Vin VGS RGEN 10% VGS G S td(on) t r t d(off) t f Figure 9. Switching Test Circuit and Switching Waveforms 2 1 Thermal Impedance Duty Cycle = 0.5 0.2 0.1 PDM 0.1 0.05 t1 t2 0.02 1. RthJA (t)=r (t) * Rth JA 2. RthJA=See Datasheet 3. TJM - TA = PDM * Rth JA (t) 4. Duty Cycle, D = t 1 /t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Figure 10. Normalized Thermal Transient Impedance Curve www.agm-mos.com 5 VER2.4 AGM312M1 ●P Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=-10V VGS=-4.5V 25 0.2 0 0 0 50 100 150 Temperature (。C) 0 200 Fig.3 Threshold Voltage V.S Junction Temperature -50 Junction Temperature 50 0.5 1 1.5 Drain-Source voltage (V) 2 Fig.4 Resistance V.S Drain Current 30 150 ON Resistance 0 Vgs(th )d -0.5 -1 20 10 -1.5 0 -2 0 10 -2.5 Fig.5 On-Resistance VS Gate Source Voltage Normalized ON-Resistance RDson(mΩ) 30 20 10 0 www.agm-mos.com 5 7 VGS( -V ) 40 Fig.6 On-Resistance V.S Junction Temperature 40 3 20 30 Drain Current(-A) 9 1.5 1 0.5 -50 6 0 50 100 Temperature 150 VER2.4 AGM312M1 ●Test Circuit Fig.1 Switching Time Measurement Circuit Fig.2 Gate Charge Waveform Fig.3 Switching Time Measurement Circuit Fig.4 Gate Charge Waveform Fig.5 Avalanche Measurement Circuit www.agm-mos.com Fig.6 Avalanche Waveform 7 VER2.4 AGM312M1 Package Outline SOIC-8, 8leads www.agm-mos.com 8 VER2.4 AGM312M1 Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 9 VER2.4