AGM303A

AGM303A ● General Description Product Summary The AGM303A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal BVDSS RDSON 30V for load switch and battery protection applications. ● Features ID 2.7mΩ 110A PRPAK5X6 Pin Configuration ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM303A Device Device Package AGM303A DFN5*6 Reel Size Tape width ---mm Quantity -----mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 110 A Drain Current-Continuous(Tc=100℃) 75 A Drain Current-Continuous@ Current-Pulsed (Note 2) 400 A Maximum Power Dissipation(Tc=25℃) 70 w Maximum Power Dissipation(Tc=100℃) 2.8 W Avalanche energy (Note 3) 343 mJ -55 To 175 ℃ Max Unit --- 45 ℃/W --- 1.8 ℃/W VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case 1 1 VER2.5 AGM303A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.5 v VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance VDS=25V,ID=10A Drain-Source On-State Resistance 30 1.2 V 1.6 30 S VGS=10V, ID=20A 2.7 3.6 mΩ VGS=4.5V, ID=15A 4.1 5.3 mΩ Dynamic Characteristics 2800 pF 340 pF 280 pF 1.7 Ω 13.9 nS 5.7 nS Turn-Off Delay Time 20 nS tf Turn-Off Fall Time 11 nS Qg Total Gate Charge 27 nC Qgs Gate-Source Charge 8 nC Qgd Gate-Drain Charge 13 nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3.3 VGS=10V, VDS=25V, ID=12A Source-Drain Diode Characteristics IS Continuous Source Current VSD Forward on Voltage VG=VD=0V , Force Current VGS=0V,IS=20A 110 A 1.0 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.5 AGM303A VGS=10V VGS=4.5V Fig.3 Threshold Voltage V.S Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage www.agm-mos.com Fig.4 Resistance V.S Drain Current Fig.6 On-Resistance V.S Junction Temperature 3 VER2.5 AGM303A Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.12 Avalanche Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com 4 VER2.5 AGM303A ●Dimensions（DFN5×6） www.agm-mos.com 5 VER2.5 AGM303A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 12, 2020. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5