AGM30P55D1

AGM30P55D1 ● General Description Product Summary The AGM30P55D1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance BVDSS RDSON ID -30V 6.5mΩ -65A TO-252 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device AGM30P55D1 AGM30P55D1 Table 1. Device Package Reel Size ---- TO-252 Quantity Tape width ---- 2500 Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） -30 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) -65 A Drain Current-Continuous(Tc=100℃) -- A -130 A Maximum Power Dissipation(Tc=25℃) 55 w Maximum Power Dissipation(Tc=125℃) -- w 120 mJ -55 To 150 ℃ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Drain Current-Continuous@ Current-Pulsed (Note 2) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Typ Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 50 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.1 ℃/W www.agm-mos.com 1 VER2.5 AGM30P55D1 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA -30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-30V,VGS=0V -- -- -1.0 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -1.5 -2.5 V gFS Forward Transconductance VDS=-10V,ID=-5A 12 -- -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-20A -- 6.5 8.5 mΩ VGS=-4.5V, ID=-10A -- 10 12.5 mΩ -- 3050 -- pF -- 460 -- pF -- 240 -- pF -- -- -- Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance F=1MHZ VGS=0V, VDS=-0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time -- -- -- nS tr Turn-on Rise Time -- -- -- nS td(off) Turn-Off Delay Time -- -- -- nS tf Turn-Off Fall Time -- -- -- nS Qg Total Gate Charge -- 28 -- nC -- 9.5 -- nC -- 10.6 -- nC -- -- -- A Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=10V,VDS=20V, ID=30A,RGEN=3Ω VGS=-10V, VDS=-25V, ID=-15A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-10A -- -- -- V trr Reverse Recovery Time IF=-25A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.5 AGM30P55D1 Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics VGS=-10V VGS=-4.5V Fig.3 Threshold Voltage V.S Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage www.agm-mos.com Fig.4 Resistance V.S Drain Current Fig.6 On-Resistance V.S Junction Temperature 3 VER2.5 AGM30P55D1 Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.5 AGM30P55D1 ●Dimensions SYMBOL min max SYMBOL min max A 2.10 2.50 B 0.85 1.25 b 0.50 0.80 b1 0.50 0.90 b2 0.45 0.70 C 0.45 0.70 D 6.30 6.75 D1 5.10 5.50 E 5.30 6.30 e1 2.25 2.35 L1 9.20 10.60 e2 4.45 4.75 L2 0.90 1.75 L3 0.60 1.10 K 0.00 0.23 www.agm-mos.com 5 VER2.5 AGM30P55D1 Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2021. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.5