AGM12T05A

AGM12T05A ● General Description « 100% EAS Guaranteed Product Summary « Green Device Available « Super Low Gate Charge « Excellent CdV/dt effect decline BVDSS RDSON « Advanced high cell density Trench technology 120V 5.5mΩ « Level: MSL1 « IEC 61249 standard PRPAK5X6 Pin Configuration ID 100A ● Features AGM12T05A designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Package Marking and Ordering Information Device Marking AGM12T05A Device Device Package Reel Size Tape width AGM12T05A DFN5*6 ---mm ---mm Quantity 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 120 V +20 / -20 V Drain Current-Continuous(Tc=25℃) (Note 1) 100 A Drain Current-Continuous(Tc=100℃) 63 A Drain Current-Continuous@ Current-Pulsed (Note 2) 400 A Maximum Power Dissipation(T c=25℃) 150 W 1.7 W 240 mJ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD Maximum Power Dissipation(T c=100℃) EAS TJ,TSTG Avalanche energy (Note 3) -55 To 175 ℃ Typ Max Unit Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 63 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1 ℃/W www.agm-mos.com 1 REV2.6 AGM12T05A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States 120 BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=100V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.5 V VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 1.2 V 1.6 VDS=10V,ID=10A 10 S VGS=10V, ID=20A 5.5 7.0 mΩ VGS=4.5V, ID=15A 7.5 10 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=60V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz 3200 pF 840 pF 31 pF 1.7 Ω 20 nS 13 nS nS Switching Times td(on) Turn-on Delay Time3 , 4 VGS=10V, VDD=50V, ID=1A,RG=3.3 tr Turn-on Rise Time3 , 4 td(off) Turn-Off Delay Time 36 tf Turn-Off Fall Time 18 nS Qg Total Gate Charge 88 nC Qgs Gate-Source Charge 10 nC Qgd Gate-Drain Charge 24 nC VGS=60V, VDS=10V, ID=20A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) 100 A VSD Forward on Voltage VGS=0V,IS=20A 1 V trr Reverse Recovery Time IF=-15A , dI/dt=100A/µs , 43 ns Qrr Reverse Recovery Charge ·TJ=25℃ 88 nc Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=55A.,RG=25Ω,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. www.agm-mos.com 2 REV2.6 AGM12T05A 4.5V 150 25 4V 10V ID=20A 120 20 90 15 RDS(ON) (mΩ) ID (A) 3.5V 60 Vgs=3V 125°C 10 25°C 5 30 0 0 0 0.5 1 1.5 2 2.5 2 3 4 6 10 VGS (V) VDS (V) Fig.1 8 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 2 15 ID=20A 1.8 VGS=4.5V 9 RDS(ON) (mΩ) Normalized On-Resistance 12 6 VGS=10V 3 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0 0.8 0 5 10 15 20 0 25 ID (A) Fig.3 50 75 100 125 150 Temperature (°C) Fig.4 On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance vs. Junction Temperature 15 1.E+02 VDS=5V 12 1.E+01 9 ID(A) IS (A) 25℃ 125℃ 6 125°C 25°C 1.E+00 3 0 1.E-01 1 1.5 2 2.5 3 3.5 0.2 Fig.5 Typical Transfer Characteristics www.agm-mos.com 0.4 0.6 0.8 1.0 VSD (V) VGS(V) Fig.6 3 Typical Source-Drain Diode Forward Voltage REV2.6 AGM12T05A 10000 10 VDS=60V ID=20A Ciss 8 Capacitance (pF) 1000 VGS (V) 6 4 Coss 100 Crss 10 2 0 1 0 10 20 30 40 50 0 20 40 80 100 VDS (V) Qg (nC) Fig.8 Typical Capacitance vs. Drain-to-Source Voltage Fig.7 Typical Gate-Charge vs. Gate-to-Source Voltage 1000 120 RDS(ON) limited Current rating ID(A) 100µs 10 DC 1ms 10ms 1 10s TJ(Max)=150°C TC=25°C Silicon Limited 100 10µs 100 ID (Amps) 60 0.1 80 60 Package Limited 40 20 0 0.01 0.01 0.1 1 10 100 0 1000 VDS (V) 25 50 75 100 125 150 TAmbient(℃) Fig.10 Maximun Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area Duty=Ton/T Peak TJ=TC+PDM.ZθJC.RθJC RθJC=1℃/W 1 Duty=0.5 ZθJA Normalized Transient Thermal Resistance 0.3 0.1 0.05 0.1 0.01 0.03 0.01 single pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Fig.11 Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient www.agm-mos.com 4 REV2.6 H D2 D L1 AGM12T05A k L E2 E E1 L2 D1 e b A2 d SYMBOL A MILLIMETER MIN Typ. MAX 0.900 1.000 1.100 A1 0.254 REF. A A1 A2 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 1.100 d www.agm-mos.com 5 1.200 1.300 0.100 REV2.6 AGM12T05A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2021. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 REV2.6