AGM310MA

AGM310MA ● General Description The AGM310MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ● Application Product Summary BVDSS RDSON ID 30V 11mΩ 23A -30V 23mΩ -18A PDFN5X6 Pin Configuration D2 D2 D1 D1 D1 ■MB/VGA Vcore G1 ■SMPS 2nd Synchronous Rectifier ■POL application S1 ■BLDC Motor driver G1 S2 D2 G2 G2 S1 S2 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM310MA AGM310MA PDFN5*6 --mm --mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol N-Ch P-Ch Units 30 -30 V ±20 ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 25 -18 A Drain Current-Continuous(Tc=100℃) 16 -14 A Drain Current-Continuous@ Current-Pulsed (Note 2) 45 -35 A Total Power Dissipation(Tc=25℃) 3.6 3.6 W Total Power Dissipation(TA=100℃) 0.7 0.7 W Avalanche energy (Note 3) 45 65 mJ Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 -55 To 150 ℃ Table 2. Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 180 ℃/W RθJC Thermal Resistance Junction-Case1 --- 34 ℃/W www.agm-mos.com 1 VER2.5 AGM310MA Table 3. N- Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V gFS Forward Transconductance VDS=5V,ID=10A -- 10 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=20A -- 11 16 mΩ VGS=4.5V, ID=10A -- 15 25 mΩ -- 850 -- pF -- 130 -- pF -- 98 -- pF -- 1.9 -- Ω -- 4.7 -- nS -- 11 -- nS -- 17 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=-0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 5.6 -- nS Qg Total Gate Charge -- 16 -- nC Qgs Gate-Source Charge -- 3 -- nC Qgd Gate-Drain Charge -- 3.8 -- nC -- -- 23 A VGS=10V,VDS=15V, RL=0.75Ω,RGEN=6Ω VGS=10V, VDS=15V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.2 V trr Reverse Recovery Time IF=-25A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.5 AGM310MA Table 3. P-Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -30 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-30V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -1.7 -2.3 V gFS Forward Transconductance VDS=-5V,ID=-10A -- 5 -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-10A -- 24 35 mΩ VGS=-4.5V, ID=-5A -- 34 55 mΩ -- 860 -- pF -- 94 -- pF -- 32 -- pF -- 9 -- -- 8 -- nS -- 18 -- nS -- 31. 8 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=-15V,VGS=0V, F=1MHZ VGS=0V, VDS=-0V,f=1.0MHz Ω Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 18.4 -- nS Qg Total Gate Charge -- 12 -- nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 2.9 -- nC VGS=-10V,VDS=-15V, ID=-15A,RGEN=3.3Ω VGS=-10V, VDS=-25V, ID=-12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge -- -- -18 A VGS=0V,IS=-10A -- -- -1.2 V IF=-25A , dI/dt=100A/µs , -- -- -- ns TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes2.RepetitiveRating: Pulsewidthlimitedby maximumjunction temperatureNotes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 3 VER2.5 AGM310MA ●N Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=10V VGS=4.5V 25 0.2 0 0 0 0 50 100 150 Temperature (。C) 0.5 1 1.5 Drain-Source voltage (V) 200 Fig.3 Threshold Voltage V.S Junction Temperature 2 Fig.4 Resistance V.S Drain Current 2.5 20 ON Resistance Vgs(th ) 2 1.5 1 10 0.5 0 -50 50 Junction Temperature 0 150 0 Fig.5 On-Resistance VS Gate Source Voltage 30 Fig.6 On-Resistance V.S Junction Temperature 1.5 Normalized ON-Resistance 14 12 RDson(mΩ) 10 20 Drain Current(A) 10 8 6 4 2 0 1 0.5 3 www.agm-mos.com 5 7 VGS( V ) 9 -50 4 0 50 100 Temperature 150 VER2.5 AGM310MA ●P Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=-10V VGS=-4.5V 25 0.2 0 0 0 50 100 150 Temperature (。C) 0 200 Fig.3 Threshold Voltage V.S Junction Temperature -50 Junction Temperature 50 ON Resistance 0 Vgs(th )d -1 -1.5 -2 50 45 40 35 30 25 20 15 10 0 10 -2.5 Fig.5 On-Resistance VS Gate Source Voltage Normalized ON-Resistance RDson(mΩ) 40 30 20 10 0 6 8 10 40 1.5 1 0.5 -50 VGS( -V ) www.agm-mos.com 20 30 Drain Current(A) Fig.6 On-Resistance V.S Junction Temperature 50 4 2 Fig.4 Resistance V.S Drain Current 150 -0.5 0.5 1 1.5 Drain-Source voltage (V) 5 0 50 100 Temperature 150 VER2.5 AGM310MA ●Test Circuit Fig.1 Switching Time Measurement Circuit Fig.2 Gate Charge Waveform Fig.3 Switching Time Measurement Circuit Fig.4 Gate Charge Waveform Fig.5 Avalanche Measurement Circuit www.agm-mos.com Fig.6 Avalanche Waveform 6 VER2.5 AGM310MA Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.5