AGM310MAP

AGM310MAP ● General Description The AGM310MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance Product Summary RDSON 30V 11mΩ 20A -30V 17mΩ -18A PDFN3.3X3.3 Pin Configuration D2 D2 D1 D1 ●Application ID BVDSS D1 D2 ■MB/VGA Vcore G1 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver S1 G1 S2 G2 G2 S1 S2 Package Marking and Ordering Information Device Marking AGM310MAP Device Device Package AGM310MAP Reel Size DFN3.3*3.3 Tape width 325mm Quantity 16mm 5000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol Parameter N-Ch P-Ch 30 -30 V Units VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ±20 ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 20 -18 A Drain Current-Continuous(Tc=100℃) 15 -14 A Drain Current-Continuous@ Current-Pulsed (Note 2) 35 -32 A Total Power Dissipation(Tc=25℃) 3.6 3.6 W Total Power Dissipation(TA=100℃) 0.7 0.7 W Avalanche energy (Note 3) 45 65 mJ -55 To 150 -55 To 150 ℃ ID IDM (pluse) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 180 ℃/W RθJC Thermal Resistance Junction-Case1 --- 34 ℃/W www.agm-mos.com 1 VER2.2 AGM310MAP Table 3. N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.5 V VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 30 1.2 V 1.6 VDS=10V,ID=5A 10 S VGS=10V, ID=15A 11 14 VGS=4.5V, ID=15A 15 22 mΩ mΩ Dynamic Characteristics 850 PF 130 pF 98 pF 1.9 Ω 4.7 nS 11 nS Turn-Off Delay Time 17 nS tf Turn-Off Fall Time 5.6 nS Qg Total Gate Charge 16 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 3.8 nC Ciss Input Capacitance Coss Output Capacitance Crss Rg VDS=15V,VGS=0V, F=1MHZ Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3.3 VGS=10V, VDS=15V, ID=10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 18 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.2 AGM310MAP Table 3. P- Channel Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS(th) gFS RDS(ON) VGS=0V ID=250μA -30 V VDS=-24V,VGS=0V -1 VGS=±20V,VDS=0V Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 1.2 1.7 μA ±100 nA 2.3 V VDS=-5V,ID=-20A 30 S VGS=-10V, ID=-20A 17 23.1 mΩ VGS=-4.5V, ID=-15A 26 32 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Rg VDS=-15V,VGS=0V, F=1MHZ Reverse Transfer Capacitance Gate resistance 1380 pF 310 pF pF 237 VGS=0V, VDS=0V,f=1.0MHz Ω 9 Switching Times 8 nS 18 nS Turn-Off Delay Time 31.8 nS tf Turn-Off Fall Time 18.4 nS Qg Total Gate Charge 45 nC Qgs Gate-Source Charge 6.4 nC Qgd Gate-Drain Charge 9.0 nC td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=-10V, VDD=-15V, ID=-15A,RGEN=3.3 VGS=-10V, VDS=-25V, ID=-12A Source-Drain Diode Characteristics IS Continuous Source Current VSD Forward on Voltage VG=VD=0V , Force Current VGS=0V,IS=-1A -8 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 3 VER2.2 AGM310MAP ●N Channel characteristics curve Fig.1 Power Dissipation Fig.2 Typical output Characteristics 200 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 150 VGS=10V 100 VGS=4.5V 50 0.2 0 0 0 0 50 100 150 Temperature (。C) 200 Fig.3 Threshold Voltage V.S Junction Temperature 2 Fig.4 Resistance V.S Drain Current 2.5 30 ON Resistance 2 Vgs(th ) 0.5 1 1.5 Drain-Source voltage (V) 1.5 1 20 10 0.5 0 0 0 -50 50 Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage 20 30 Drain Current(A) 40 Fig.6 On-Resistance V.S Junction Temperature 1.6 Normalized ON-Resistance 30 RDson(mΩ) 10 150 20 10 1.2 0.8 0.4 0 3 www.agm-mos.com 5 7 VGS( -V ) -50 9 4 0 50 100 Temperature 150 VER2.2 AGM310MAP ●Test Circuit CHANNEL-N Fig.1 Switching Time Measurement Circuit Fig.2 Gate Charge Waveform Fig.3 Switching Time Measurement Circuit Fig.4 Gate Charge Waveform Fig.5 Avalanche Measurement Circuit www.agm-mos.com Fig.6 Avalanche Waveform 5 VER2.2 AGM310MAP ●P Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 50 1 Drain Current (A) Power Dissipation Pd/Pd MAX.% 1.2 0.8 0.6 0.4 VGS=-10V VGS=-4.5V 25 0.2 0 0 0 50 100 150 Temperature (。C) 0 200 Fig.3 Threshold Voltage V.S Junction Temperature -50 Junction Temperature 50 0.5 1 1.5 Drain-Source voltage (V) 2 Fig.4 Resistance V.S Drain Current 30 150 ON Resistance 0 Vgs(th )d -0.5 -1 20 10 -1.5 0 -2 0 -2.5 Fig.5 On-Resistance VS Gate Source Voltage Normalized ON-Resistance RDson(mΩ) 20 10 0 www.agm-mos.com 5 7 VGS( -V ) 20 30 Drain Current(A) 40 Fig.6 On-Resistance V.S Junction Temperature 30 3 10 9 1.5 1 0.5 -50 6 0 50 100 Temperature 150 VER2.2 AGM310MAP ●Test Circuit CHANNEL-P Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 7 VER2.2 AGM310MAP ●Dimensions（DFN3.3×3.3） Symbol Dimensions (unit: mm) Min Typ Max 0.70 0.75 0.80 b 0.25 0.30 0.35 c 0.10 0.15 0.25 D 3.25 3.35 3.45 D1 3.00 3.10 3.20 D2 1.78 1.88 1.98 D3 -- 0.13 -- 3.20 3.30 3.40 E1 3.00 3.15 3.20 E2 2.39 2.49 2.59 A E e H 0.65 BSC 0.30 0.39 0.50 L 0.30 0.40 0.50 L1 -- 0.13 -- K 0.30 -- -- θ -- 10° 12° M * * 0.15 * Not Specified www.agm-mos.com 8 VER2.2 AGM310MAP Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 9 VER2.2