AGM420MA

AGM420MA ● General Description The AGM420MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features Product Summary ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ID RDSON BVDSS 40V 18mΩ 20A -40V 26mΩ -18A PDFN5*6 Pin Configuration ■Low Gate Charge for fast switching ■Low Thermal resistance D1 D2 D2 D1 D1 ●Application ■MB/VGA Vcore G1 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver S1 G1 S2 D2 G2 S1 G2 S2 Package Marking and Ordering Information Device Marking AGM420MA Device Device Package Reel Size Tape width DFN5*6 325mm 16mm AGM420MA Quantity 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol VDS Drain-Source Voltage (VGS=0V） VGS ID IDM (pluse) P-Ch N-Ch Parameter 40 -40 V Gate-Source Voltage (VDS=0V) ±20 ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 18 -20 A Drain Current-Continuous(Tc=100℃) 15 -16 A Drain Current-Continuous@ Current-Pulsed (Note 2) 50 -40 A Total Power Dissipation(Tc=25℃) 25 31 W Total Power Dissipation(TA=100℃) 4 5 W Avalanche energy (Note 3) 31 58 mJ -55 To 150 -55 To 150 ℃ PD EAS TJ,TSTG Units Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W www.agm-mos.com 1 VER2.2 AGM420MA Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=40V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=40V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.7 2.5 V RDS(ON) Drain-Source On-State Resistance ④ VGS=10V, ID=25A -- 18 23 mΩ RDS(ON) Drain-Source On-State Resistance ④ 25 36 mΩ V(BR)DSS IDSS VGS=4.5V, ID=20A -- Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=20V,VGS=0V, f=1MHz f=1MHz VDS=20V,ID=20A, VGS=10V 970 1130 1230 pF 95 100 120 pF 80 90 105 pF -- 2.2 -- Ω -- 20.5 -- nC -- 4.9 -- nC -- 4.1 -- nC -- 44.5 -- ns -- 19 -- ns -- 9.2 -- ns 0.9 1.2 V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time t d(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD=20V, ID=20A, RG=3Ω, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage t rr Reverse Recovery Time Qrr ISD=25A,VGS=0V Tj=25℃,Isd=20A, -- -- 6.8 -- ns -- 1.6 -- nC VGS=0V Reverse Recovery Charge di/dt=100A/μs NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 6A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 300μs; duty cycle≤ 2%. www.agm-mos.com 2 VER2.2 AGM420MA Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=-250μA -40 -- -- V Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-40V,VGS=0V -- -- -100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.0 -1.7 -2.5 V RDS(ON) Drain-Source On-State Resistance ② VGS=-10V, ID=-15A -- 26 34 mΩ RDS(ON) Drain-Source On-State Resistance ② VGS=-4.5V, ID=-5A -- 34 46 mΩ -- 1112 -- pF -- 135 -- pF 95 -- pF -- 27 -- nC -- 7.3 -- nC -- 5.6 -- nC -- 13 -- nS V(BR)DSS IDSS Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-30V,VGS=0V, f=1MHz -- VDS=-20V,ID=-10A, VGS=-10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=-10A, -- 18 -- nS t d(off) Turn-Off Delay Time RG=6.8Ω, -- 36 -- nS tf Turn-Off Fall Time -- 25 -- nS VDD=-20V, VGS=-10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=-15A,VGS=0V -- -0.89 -1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=-10A, -- 34 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=-100A/μs 30 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ②Pulse width ≤ 300μs; duty cycle≤ 2%. ③Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = -34A, VGS =-10V. Part not recommended for use above this value www.agm-mos.com 3 VER2.2 AGM420MA P-Channel Typical Characteristics -ID, -Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj Normalized On Resistance -ID, -Drain-Source Current (A) Fig1. Typical Output Characteristics -ID,- Drain Current (A) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj -ISD, -Reverse Drain Current (A) -VGS, -Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage www.agm-mos.com Fig6. Maximum Safe Operating Area 4 VER2.2 AGM420MA Normalized Threshold Voltage (Vth) ID, Drain-Source Current (A) Typical Characteristics Normalized On Resistance Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage www.agm-mos.com Fig6. Maximum Safe Operating Area 5 VER2.2 AGM420MA N-Channel Typical Characteristics Normalized Threshold Voltage (Vth) ID, Drain-Source Current (A) Typical Characteristics VDS, Drain -Source Voltage (V) Fig2. Normalized Threshold Voltage Vs. Temperature Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage www.agm-mos.com Fig6. Maximum Safe Operating Area 6 VER2.2 AGM420MA C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics Qg - Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Thermal Resistance) ZθJC Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms www.agm-mos.com 7 VER2.2 AGM420MA PDFN5x6 Package Outline Data DIMENSIONS ( unit : mm ) www.agm-mos.com Symbol Min Typ Max Symbol A 0.90 1.00 1.10 e b 0.33 0.41 0.51 H 0.41 0.51 0.61 C 0.20 0.25 0.30 K 1.10 -- -- D1 4.80 4.90 5.00 L 0.51 0.61 0.71 D2 3.61 3.81 3.96 L1 0.06 0.13 0.20 E 5.90 6.00 6.10 M 0.50 -- -- E1 5.70 5.75 5.80 α 0° -- 12° E2 3.38 3.58 3.78 8 Min Typ Max 1.27 BSC VER2.2 AGM420M Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 9 VER2.2