AGM405A

AGM405A ● General Description Product Summary The AGM405A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal BVDSS RDSON ID 40V 5.1mΩ 72A for load switch and battery protection applications. ● Features PRPAK5X6 Pin Configuration ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM405A Device AGM405A Device Package PDFN5*6 Reel Size Tape width 325mm Quantity 16mm 2500/3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 40 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 72 A Drain Current-Continuous(Tc=100℃) 52 A Drain Current-Continuous@ Current-Pulsed (Note 2) 220 A Maximum Power Dissipation(T c=25℃) 64 W Maximum Power Dissipation(T c=100℃) 27 W 200 mJ -55 To 150 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 1 Max Unit --- 60 ℃/W --- 4.5 ℃/W VER2.2 AGM405A Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=40V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.5 V VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 40 1.2 V 1.6 VDS=5V,ID=20A 10 S VGS=10V, ID=20A 5.1 6.8 mΩ VGS=4.5V, ID=15A 7.0 10 mΩ Dynamic Characteristics 1380 pF 190 pF 37 pF 1.7 Ω 6.9 nS 1.7 nS Turn-Off Delay Time 30 nS tf Turn-Off Fall Time 15 nS Qg Total Gate Charge 29 nC Qgs Gate-Source Charge 4.5 nC Qgd Gate-Drain Charge Ciss Input Capacitance Coss Crss Rg VDS=15V,VGS=0V, F=1MHZ Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3.3 VGS=30V, VDS=20V, ID=12A 6.4 nC Source-Drain Diode Characteristics IS Continuous Source Current VSD Forward on Voltage VG=VD=0V , Force Current VGS=0V,IS=20A 100 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.2 AGM405A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 150 ID (A) 120 10V 5V 100 VDS=5V 4V 80 6V 3.5V 90 25℃ 60 40 60 125℃ VGS=3V 30 0 0 ID (A) 0.5 1.0 1.5 2.0 20 VDS(V) 2.5 3.0 3.5 4.0 4.5 5.0 VGS(V) 0 2 2.5 4 4.5 IS(A) 1.0E+02 15 3.5 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current RDS(ON) (mΩ) 3 1.0E+01 12.5 VGS=4.5V 125℃ 1.0E+00 10 1.0E-01 25℃ 7.5 1.0E-02 VGS=10V 5.0 1.0E-03 2.5 0 1.0E-04 ID(A) 0 10 20 30 40 50 1.0E-05 0.0 60 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=20V ID=30A 10000 6 1000 Ciss Coss 4 100 Crss 2 0 Qg(nC) 0 5 www.agm-mos.com 10 15 20 25 10 0 30 3 VDS(V) 10 20 30 40 VER2.2 AGM405A Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature V BR(DSS)(V) 1.3 R DS (on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 -50 0 Tj (℃ ) 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID (A ) 1000 Tj (℃ ) 80 Limited by R DS(on) ID (A ) 70 60 10μs 100μs 100 50 1ms 40 10 10ms 30 100ms DC 20 T A=25 ℃ Single pulse 1 10 V DS (V) 0.1 0.1 1 10 0 100 0 25 50 Tc (℃ ) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-251S,TO-252) 101 Zth J-C (℃ /W) 10-1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 www.agm-mos.com 10-4 T P (s) 10-3 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *ZthJC +T C 10-2 10 -1 100 4 VER2.2 AGM405A Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.2 AGM405A ●Dimensions（DFN5×6） www.agm-mos.com 6 VER2.2 AGM405A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.2