AGM405A

AGM405A ● General Description Product Summary The AGM405A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID 40V 5.1mΩ 72A This device is ideal for load switch and battery protection applications. PDFN5*6 Pin Configuration ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested DVDS tested ■ 100% ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM405A AGM405A PDFN5*6 330mm 12mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Parameter Symbol Value Unit VDS Drain-Source Voltage (VGS=0V） 40 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 72 A Drain Current-Continuous(Tc=100℃) 52 A Drain Current-Pulsed (Note 2) 288 A Maximum Power Dissipation(Tc=25℃) 27 w Maximum Power Dissipation(Tc=100℃) 11 w Avalanche energy (Note 3) 196 mJ -55 To 150 ℃ Typ Max Unit ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 20 ℃/W RθJC Thermal Resistance Junction-Case1 --- 4.5 ℃/W www.agm-mos.com 1 VER2.72 AGM405A Table 3. Electrical Characteristics (TJ=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.6 2.2 V gFS Forward Transconductance VDS=5V,ID=10A -- 20 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=20A -- 5.1 6.8 mΩ VGS=4.5V, ID=10A -- 7.0 10 mΩ -- 1820 -- pF -- 190 -- pF -- 152 -- pF -- 2.2 -- Ω -- 6.9 -- nS -- 1.7 -- nS -- 30 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=20V,VGS=0V ,F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 15 -- nS Qg Total Gate Charge -- 29 -- nC Qgs Gate-Source Charge -- 4.5 -- nC Qgd Gate-Drain Charge -- 6.4 -- nC -- -- 72 A VGS=10V,VDS=15V, RL=0.75Ω,RGEN=3.3Ω VGS=10V, VDS=20V, ID=20A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A -- -- 1.2 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=25V,Vgs=10V,ID=28A,L=0.5mH,RG=25ohm www.agm-mos.com 2 VER2.72 AGM405A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 150 ID (A) 120 10V 5V 100 VDS=5V 4V 80 6V 3.5V 90 25℃ 60 40 60 125℃ VGS=3V 30 0 0 ID (A) 0.5 1.0 1.5 2.0 20 VDS(V) 2.5 3.0 3.5 4.0 4.5 5.0 VGS(V) 0 2 2.5 3 3.5 4 4.5 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current RDS(ON) (mΩ) IS(A) 1.0E+02 15 1.0E+01 12.5 VGS=4.5V 125℃ 1.0E+00 10 1.0E-01 25℃ 7.5 1.0E-02 VGS=10V 5.0 1.0E-03 2.5 0 1.0E-04 ID(A) 0 10 20 30 40 50 1.0E-05 0.0 60 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=20V ID=30A 10000 6 1000 Ciss Coss 4 100 Crss 2 0 Qg(nC) 0 5 www.agm-mos.com 10 15 20 25 10 0 30 3 VDS(V) 10 20 30 40 VER2.72 AGM405A Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature V BR(DSS)(V) 1.3 R DS (on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 -50 0 Tj (℃ ) 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID (A ) 1000 Tj (℃ ) -50 80 Limited by R DS(on) ID (A ) 70 60 10μs 100μs 100 50 1ms 40 10 10ms 30 100ms DC 20 T A=25 ℃ Single pulse 1 10 V DS (V) 0.1 0.1 1 10 0 100 0 25 50 Tc (℃ ) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-251S,TO-252) 101 Zth J-C (℃ /W) 10-1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 www.agm-mos.com 10-4 T P (s) 10-3 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *ZthJC +T C 10-2 10 -1 100 4 VER2.72 AGM405A Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.72 AGM405A H D2 D L1 ●Dimensions（PDFN5*6） MILLIMETER SYMBOL A 1.100 0.254 REF. L k 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e e θ 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 A2 d MAX 1.000 A2 E2 E b Typ. 0.900 A1 E1 L2 D1 MIN 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 θ 8° 10° 12° Φ 1.100 1.200 1.300 8 7 6 5 5 6 7 8 H L2 0.100 A A1 d P D1 1.200 E2 E E1 0 K N Millimeters Symbol MIN. NOM. MAX. A 0.90 1.05 1.20 B 0.35 0.40 0.50 C 0.20 0.25 0.35 D 4.90 5.05 5.20 D1 3.72 3.82 3.92 E 6.00 6.15 6.30 E1 5.60 5.75 5.90 E2 3.47 3.57 3.67 e 1 L1 2 e 3 4 4 3 b 2 1 L 1.27 BSC. H 0.48 0.58 0.68 K 1.17 1.27 1.37 L 0.64 0.74 0.84 L1/L2 θ 8° M θ M 0.20 REF. N A 10° 12° 0.08 REF. 0 - 0.15 O 0.25 REF. P 1.28 REF. C D www.agm-mos.com 6 VER2.72 AGM405A PDFN5*6 Marking Instructions: Model1: Model2: www.agm-mos.com 7 VER2.72 AGM405A Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequences.Do not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the fifth version issued on March 10th, 2024. This document replaces all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. 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