AGM403A1

AGM403A1 ● General Description Product Summary The AGM403A1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal BVDSS RDSON ID 40V 2.7mΩ 120A for load switch and battery protection applications. ● Features PRPAK5X6 Pin Configuration ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM403A1 Device AGM403A1 Device Package PDFN5*6 Reel Size Tape width Quantity 325mm 16mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) ID IDM (pluse) Value Unit 40 V ±20 V 120 A 72 A Drain Current-Continuous@ Current-Pulsed (Note 2) 420 A Maximum Power Dissipation(T c=25℃) 105 W Maximum Power Dissipation(T c=100℃) 41 W 360 mJ Drain Current-Continuous(Tc=100℃) PD EAS TJ,TSTG Avalanche energy (Note 3) Operating Junction and Storage Temperature Range -55 To 150 ℃ Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 1 Max Unit --- 45 ℃/W --- 1.2 ℃/W VER2.5 AGM403A1 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=40V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA 2.1 V VGS(th) gFS RDS(ON) Gate Threshold Voltage VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance 40 1.1 V 1.5 VDS=5V,ID=20A 16 S VGS=10V, ID=20A 2.7 3.6 mΩ VGS=4.5V, ID=15A 3.4 4.6 mΩ Dynamic Characteristics 3000 pF 370 pF 170 pF 1.7 Ω 6.9 nS 1.7 nS Turn-Off Delay Time 30 nS tf Turn-Off Fall Time 15 nS Qg Total Gate Charge 20 nC Qgs Gate-Source Charge 9 nC Qgd Gate-Drain Charge 11 nC Ciss Input Capacitance Coss Crss Rg VDS=15V,VGS=0V, F=1MHZ Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3.3 VGS=10V, VDS=20V, ID=12A Source-Drain Diode Characteristics IS Continuous Source Current VSD Forward on Voltage VG=VD=0V , Force Current VGS=0V,IS=20A 120 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=20V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.5 AGM403A1 Fig.1 Power Dissipation Fig.2 Typical output Characteristics VGS=10V VGS=4.5V Fig.3 Threshold Voltage V.S Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage www.agm-mos.com Fig.4 Resistance V.S Drain Current Fig.6 On-Resistance V.S Junction Temperature 3 VER2.5 AGM403A1 Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit www.agm-mos.com Fig.12 Avalanche Waveform 4 VER2.5 AGM403A1 Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.5 AGM403A1 ●Dimensions（DFN5×6） www.agm-mos.com 6 VER2.5 AGM403A1 Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2021. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.5