AGM402A1

AGM402A1 ● General Description Product Summary The AGM402A1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal BVDSS RDSON ID 40V 2.3mΩ 140A for load switch and battery protection applications. ● Features PRPAK5X6 Pin Configuration ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM402A1 Device AGM402A1 Device Package Reel Size PDFN5*6 Tape width --mm Quantity --mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) ID IDM (pluse) Value Unit 40 V ±20 V 140 A 98 A Drain Current-Continuous@ Current-Pulsed (Note 2) 570 A Maximum Power Dissipation(T c=25℃) 125 W Maximum Power Dissipation(T c=100℃) 62 W 550 mJ Drain Current-Continuous(Tc=100℃) PD EAS TJ,TSTG Avalanche energy (Note 3) Operating Junction and Storage Temperature Range -55 To 175 ℃ Table 2. Thermal Characteristic Symbol RθJA RθJC www.agm-mos.com Parameter Typ Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 1 Max Unit --- 62 ℃/W --- 1.2 ℃/W VER2.4 AGM402A1 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Typical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 45 Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=40V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.7 2.5 V RDS(ON) Drain-Source On-State Resistance③ VGS=10V, ID=40A -- 2.3 3.1 mΩ RDS(ON) Drain-Source On-State Resistance③ VGS=4.5V, ID=20A -- 3.1 5 mΩ V(BR)DSS IDSS -- V Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge 4140 pF 405 pF 360 pF 2 Ω VDS=20V,VGS=0V, f=1MHz f=1MHz -- 73 -- nC - 15 -- nC - 15 -- nC -- 13.7 -- nS VDS=20V,ID=40A, Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=40A, - 6.1 -- nS t d(off) Turn-Off Delay Time RG=3Ω, - 50 -- nS tf Turn-Off Fall Time - 10 -- nS VDD=20V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=40A,VGS=0V -- 0.8 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=30A, -- 18 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=500A/μs 40 nC Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.agm-mos.com 2 VER2.4 AGM402A1 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Normalized On Resistance ID, Drain-Source Current (A) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage www.agm-mos.com Fig6. Maximum Safe Operating Area 3 VER2.4 AGM402A1 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZθJc Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9 . Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms www.agm-mos.com Fig11. Switching Time Test Circuit and waveforms 4 VER2.4 AGM402A1 ●Dimensions（DFN5×6） www.agm-mos.com 5 VER2.4 AGM402A1 Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2019. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 6 VER2.4