AGM405D

AGM405D ● General Description Product Summary The AGM405D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. BVDSS RDSON ID 40V 5.3mΩ 72A ● Features ■ Advance high cell density Trench technology ■ Low ■ Low RDS(ON) to minimize conductive loss Gate Charge for fast switching ■ Low Thermal resistance TO-252 Pin Configuration ● Application ■ MB/VGA Vcore ■ SMPS ■ POL 2nd Synchronous Rectifier application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM405D Table 1. Device AGM405D Device Package Reel Size Tape width Quantity TO-252 325mm 16mm 2500 Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） 40 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 72 A Drain Current-Continuous(Tc=100℃) 52 A Drain Current-Continuous@ Current-Pulsed (Note 2) 220 A Maximum Power Dissipation(Tc=25℃) 64 w Maximum Power Dissipation(Tc=125℃) -- w Avalanche energy (Note 3) -- mJ ID IDM (pluse) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range -55 To 175 ℃ Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 50 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.4 ℃/W www.agm-mos.com 1 VER2.5 AGM405D Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1.0 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.5 2.0 V gFS Forward Transconductance VDS=5V,ID=20A 10 -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=30A -- 5.3 7.5 mΩ VGS=4.5V, ID=20A -- 9 11 mΩ -- 1820 -- pF -- 285 -- pF -- 191 -- pF -- -- -- Ω -- 6.5 -- nS -- 17 -- nS -- 30 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=20V,VGS=0V, F=1MHZ VGS=0V, VDS=-0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 16 -- nS Qg Total Gate Charge -- 29 -- nC Qgs Gate-Source Charge -- 4.5 -- nC Qgd Gate-Drain Charge -- 6.4 -- nC -- -- 72 A VGS=10V,VDS=20V ID=30A,RGEN=3Ω VGS=10V, VDS=20V, ID=30A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=30A -- -- 1.2 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , -- 26 -- ns Qrr Reverse Recovery Charge TJ=25℃ -- 22 -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.agm-mos.com 2 VER2.5 AGM405D Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 150 ID (A) 120 10V 5V 100 VDS=5V 4V 80 6V 3.5V 90 25℃ 60 40 60 125℃ VGS=3V 30 0 0 ID (A) 0.5 1.0 1.5 2.0 VDS(V) 2.5 3.0 3.5 4.0 4.5 20 VGS(V) 0 2 5.0 2.5 4 4.5 IS(A) 1.0E+02 15 3.5 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current RDS(ON) (mΩ) 3 1.0E+01 12.5 VGS=4.5V 125℃ 1.0E+00 10 1.0E-01 25℃ 7.5 1.0E-02 VGS=10V 5.0 1.0E-03 2.5 0 1.0E-04 ID(A) 0 10 20 30 40 50 60 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=20V ID=30A 10000 6 1000 Ciss Coss 4 100 Crss 2 0 Qg(nC) 0 5 www.agm-mos.com 10 15 20 25 10 0 30 3 VDS(V) 10 20 30 40 VER2.5 AGM405D Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature V BR(DSS)(V) 1.3 R DS (on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 -50 0 Tj (℃ ) 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID (A ) 1000 Tj (℃ ) -50 80 Limited by R DS(on) ID (A ) 70 60 10μs 100μs 100 50 1ms 40 10 10ms 30 100ms DC 20 T A=25 ℃ Single pulse 1 10 V DS (V) 0.1 0.1 1 10 0 100 0 25 50 Tc (℃ ) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-251S,TO-252) 101 Zth J-C (℃ /W) 10-1 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 www.agm-mos.com 10-4 T P (s) 10-3 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *ZthJC +T C 10-2 10 -1 100 4 VER2.5 AGM405D Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 5 VER2.5 AGM405D Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) www.agm-mos.com 6 VER2.5 AGM405D ● Dimensions SYMBOL min max SYMBOL min max A 2.10 2.50 B 0.85 1.25 b 0.50 0.80 b1 0.50 0.90 b2 0.45 0.70 C 0.45 0.70 D 6.30 6.75 D1 5.10 5.50 E 5.30 6.30 e1 2.25 2.35 L1 9.20 10.60 e2 4.45 4.75 L2 0.90 1.75 L3 0.60 1.10 K 0.00 0.23 www.agm-mos.com 7 VER2.5 AGM405D Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on October 10, 2021. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 8 VER2.5