SMAJ14A

Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 SMAJ Series Datasheet Description The SMAJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board space. Features ⚫ Halogen free and RoHS compliant ⚫ Low profile package ⚫ Built-in strain relief Design ⚫ Low inductance ⚫ Excellent clamping capability ⚫ 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ⚫ Fast response time: typically less than 1.0ps from 0V to VB min ⚫ Typical IR less than 1μA above 10V devices ⚫ Peak 260℃ high temperature Reflow Soldering withstanding ⚫ Meet MSL level1, per J-STD-020 ⚫ IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) ⚫ Unit Weight: 0.07g/PCS Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in telecom, computer, Industrial and consumer electronic applications. Maximum Ratings and Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 400 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 3.3 Watts VF 3.5/5.0 V IFSM 60 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 30 ℃/W Typical thermal resistance junction to ambient RθJA 120 ℃/W Steady state power dissipation at TA=50℃ (Fig.5) Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Ranges. Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2. 2. Each terminal is surface Mounted on the 5.0mm×5.0mm (0.03mm thick) copper pads. 3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum. 4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts. www.liownsemi.com 掌握芯技术 Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Dimensions (SMA/DO-214AC) Electrical Characteristics (TA=25℃) Device Marking Code Part Number Reverse StandOff Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Reverse Leakage @VR Unial Bi UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMAJ5.0A SMAJ5.0CA AE WE 5.0 6.40 7.00 10 9.2 43.5 800 SMAJ6.0A SMAJ6.0CA AG WG 6.0 6.67 7.37 10 10.3 38.8 800 SMAJ6.5A SMAJ6.5CA AK WK 6.5 7.22 7.98 10 11.2 35.7 500 SMAJ7.0A SMAJ7.0CA AM WM 7.0 7.78 8.60 10 12.0 33.3 200 SMAJ7.5A SMAJ7.5CA AP WP 7.5 8.33 9.21 1 12.9 31.0 100 SMAJ8.0A SMAJ8.0CA AR WR 8.0 8.89 9.83 1 13.6 29.4 50 SMAJ8.5A SMAJ8.5CA AT WT 8.5 9.44 10.40 1 14.4 27.8 20 SMAJ9.0A SMAJ9.0CA AV WV 9.0 10.00 11.10 1 15.4 26.0 10 SMAJ10A SMAJ10CA AX WX 10.0 11.10 12.30 1 17.0 23.5 5 SMAJ11A SMAJ11CA AZ WZ 11.0 12.20 13.50 1 18.2 22.0 1 SMAJ12A SMAJ12CA BE XE 12.0 13.30 14.70 1 19.9 20.1 1 SMAJ13A SMAJ13CA BG XG 13.0 14.40 15.90 1 21.5 18.6 1 SMAJ14A SMAJ14CA BK XK 14.0 15.60 17.20 1 23.2 17.2 1 SMAJ15A SMAJ15CA BM XM 15.0 16.70 18.50 1 24.4 16.4 1 SMAJ16A SMAJ16CA BP XP 16.0 17.80 19.70 1 26.0 15.4 1 SMAJ17A SMAJ17CA BR XR 17.0 18.90 20.90 1 27.6 14.5 1 SMAJ18A SMAJ18CA BT XT 18.0 20.00 22.10 1 29.2 13.7 1 SMAJ20A SMAJ20CA BV XV 20.0 22.20 24.50 1 32.4 12.3 1 SMAJ22A SMAJ22CA BX XX 22.0 24.40 26.90 1 35.5 11.3 1 www.liownsemi.com 掌握芯技术 Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Electrical Characteristics (TA=25℃) Device Marking Code Part Number Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Reverse Leakage @VR Uni Bi UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMAJ24A SMAJ24CA BZ XZ 24.0 26.70 29.50 1 38.9 10.3 1 SMAJ26A SMAJ26CA CE YE 26.0 28.90 31.90 1 42.1 9.5 1 SMAJ28A SMAJ28CA CG YG 28.0 31.10 34.40 1 45.4 8.8 1 SMAJ30A SMAJ30CA CK YK 30.0 33.30 36.80 1 48.4 8.3 1 SMAJ33A SMAJ33CA CM YM 33.0 36.70 40.60 1 53.3 7.5 1 SMAJ36A SMAJ36CA CP YP 36.0 40.00 44.20 1 58.1 6.9 1 SMAJ40A SMAJ40CA CR YR 40.0 44.40 49.10 1 64.5 6.2 1 SMAJ43A SMAJ43CA CT YT 43.0 47.80 52.80 1 69.4 5.8 1 SMAJ45A SMAJ45CA CV YV 45.0 50.00 55.30 1 72.7 5.5 1 SMAJ48A SMAJ48CA CX YX 48.0 53.30 58.90 1 77.4 5.2 1 SMAJ51A SMAJ51CA CZ YZ 51.0 56.70 62.70 1 82.4 4.9 1 SMAJ54A SMAJ54CA RE ZE 54.0 60.00 66.30 1 87.1 4.6 1 SMAJ58A SMAJ58CA RG ZG 58.0 64.40 71.20 1 93.6 4.3 1 SMAJ60A SMAJ60CA RK ZK 60.0 66.70 73.70 1 96.8 4.1 1 SMAJ64A SMAJ64CA RM ZM 64.0 71.10 78.60 1 103.0 3.9 1 SMAJ70A SMAJ70CA RP ZP 70.0 77.80 86.00 1 113.0 3.5 1 SMAJ75A SMAJ75CA RR ZR 75.0 83.30 92.10 1 121.0 3.3 1 SMAJ78A SMAJ78CA RT ZT 78.0 86.70 95.80 1 126.0 3.2 1 SMAJ85A SMAJ85CA RV ZV 85.0 94.40 104.0 1 137.0 2.9 1 SMAJ90A SMAJ90CA RX ZX 90.0 100.0 111.0 1 146.0 2.7 1 SMAJ100A SMAJ100CA RZ ZZ 100.0 111.0 123.0 1 162.0 2.5 1 SMAJ110A SMAJ110CA SE VE 110.0 122.0 135.0 1 177.0 2.3 1 SMAJ120A SMAJ120CA SG VG 120.0 133.0 147.0 1 193.0 2.1 1 SMAJ130A SMAJ130CA SK VK 130.0 144.0 159.0 1 209.0 1.9 1 SMAJ150A SMAJ150CA SM VM 150.0 167.0 185.0 1 243.0 1.6 1 SMAJ160A SMAJ160CA SP VP 160.0 178.0 197.0 1 259.0 1.5 1 SMAJ170A SMAJ170CA SR VR 170.0 189.0 209.0 1 275.0 1.5 1 SMAJ180A SMAJ180CA ST VT 180.0 201.0 222.0 1 292.0 1.4 1 SMAJ190A SMAJ190CA SU YU 190.0 211.0 233.0 1 308.0 1.3 1 SMAJ200A SMAJ200CA SV VV 200.0 224.0 247.0 1 324.0 1.2 1 SMAJ210A SMAJ210CA SW YW 210.0 237.0 263.0 1 340.0 1.2 1 SMAJ220A SMAJ220CA GE VX 220.0 246.0 272.0 1 356.0 1.1 1 SMAJ250A SMAJ250CA SZ VZ 250.0 279.0 309.0 1 405.0 1.0 1 SMAJ300A SMAJ300CA TE UE 300.0 335.0 371.0 1 486.0 0.8 1 SMAJ350A SMAJ350CA TG UG 350.0 391.0 432.00 1 567.0 0.7 1 SMAJ400A SMAJ400CA TK UK 400.0 447.0 494.00 1 648.0 0.6 1 SMAJ440A SMAJ440CA TM UM 440.0 492.0 543.00 1 713.0 0.6 1 www.liownsemi.com 掌握芯技术 Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage % PPPM - Peak Pulse Power (kW) 10 1 0.1 1 10 100 100 Tjmax=175 80 60 Tjmax=150 40 20 0 1000 0 td-Pulse Width (µs) 175 10000 150 TJ=25 Pulse Width(td) is defined as the point where the peak current decays to 50% of IPP M tr=10µs Bi-directional V=0V 1000 Uni-directional V=0V Peak Value IPPM 100 Cj (pF) Peak Pulse Current, %IRSM 50 75 100 125 150 TA-Ambient Temperature ( ) Figure 4. Typical Junction Capacitance Figure 3. Pulse Waveform Half Value IPPM (IPPM/2) 100 50 10 10/1000µs Waveform as defined by R.E.A td 0 0 TJ=25 f=1.0MHz Vsig=50mVp-p 1 1.0 2.0 3.0 1 4.0 Figure 5. Steady State Power Dissipation Derating Curve 3.0 60 Peak Forward Surve Current (A) 70 Tjmax=175 2.0 1.5 Tjmax=150 1.0 0.5 0 0 25 50 75 100 125 TA-Ambient Temperature ( www.liownsemi.com 100 1000 Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 3.5 2.5 10 VBR-Reverse Breakdown Voltage (V) Time (ms) PM(AV), Steady State Power Dissipation (W) 25 150 175 50 Tj = Tj max. 8.3 ms Single Half Sine-Wave 40 30 20 10 0 ) 掌握芯技术 Core Technology 1 10 5 50 Number of Cycles at 60Hz 100 （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Marking Code Cathode Marking YYWW YYWW XX XX Logo Device Code Tracing Code Logo Device Code Tracing Code Part Number Code SMAJ XX C A A：5% VBR Tolerance C：Bidirectional；No C：Unidirectional VR Voltage 400W Series Code Soldering Parameters www.liownsemi.com 掌握芯技术 Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Packaging Specification Tape For Uni-Devices 13 Inches Reel D Φ330.0±2.0 d Φ13.5±0.5 W 16.0±2.0 d D www.liownsemi.com W Quantity: 5000PCS/Reel 掌握芯技术 Core Technology （V1）