Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
SMF Series Datasheet
Description
The SMF series is designed specifically to protect sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events. SMF package is 50% smaller in footprint when compare to
SMA package and deliverying one of the low height profiles (1.1mm) in the industry.
Features
⚫
IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
⚫
SOD-123FL surface mount package
⚫
Protects one I/O line
⚫
Peak power dissipation of 1000W under 8/20μs waveform
⚫
Low leakage current
⚫
Solid-state silicon avalanche technology
⚫
RoHS compliant
⚫
Solder reflow temperature: Pure Tin-Sn, 260~270℃
⚫
Flammability rating UL 94V-0
⚫
Meets MSL level 1, per J-STD-020
Applications
SMF devices are ideal for the protection of I/O interfaces, VCC bus and other vulnerable circuit used in cellular
phones, portable devices, business machines, power supplies and other consumer applications.
Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol
Value
Units
Peak pulse power dissipation at 10/1000μs waveform
(Note1, Note2, Fig.1)
PPPM
Minimum 200
Watts
Peak pulse power (tp=8/20μs waveform)
PPPM
Minimum 1000
Watts
Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3)
IPPM
See Table
Amps
PM(AV)
1.0
Watts
VF
3.5
V
IFSM
20
Amps
TJ,TSTG
-55 to +150
℃
Typical thermal resistance junction to lead
RθJL
100
℃/W
Typical thermal resistance junction to ambient
RθJA
220
℃/W
Steady state power dissipation at TL=75℃ (Fig.5)
Maximum Instantaneous Forward Voltage at 12A for
Unidirectional Only
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load, (JEDEC Method) (Note3, Fig.6)
Operating junction and Storage Temperature Ranges.
Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2.
2. Each terminal is surface Mounted on the 5.0mm×5.0mm (0.03mm thick) copper pads.
3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum.
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Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Dimensions (SOD123FL)
Inches
Dimensions
Millimeters
Min.
Max.
Min.
Max.
A
0.138
0.154
3.50
3.90
B
0.102
0.118
2.60
3.00
C
0.030
0.043
0.75
1.10
D
0.063
0.079
1.60
2.00
D
C
F
B
A
Soldering Pad Layout Recommended
1.00
H
0.031Typ.
F
1.10
h
2.00
0.80Typ.
H
0.035
0.053
0.90
1.35
h
0.005
0.009
0.12
0.22
Electrical Characteristics (TA=25℃)
Part Number
Device
Reverse
Breakdown
Marking
Stand-Off
Voltage
Code
Voltage
@IT
Maximum
Test
Clamping
Current
Voltage
@IPP
Peak
Reverse
Pulse
Leakage
Current
@VR
Uni
Bi
UNI
BI
VR(V)
Min(V)
Max(V)
IT(mA)
VC(V)
IPP(A)
IR(μA)
SMF5.0A
SMF5.0CA
KE
AE
6.4
7
10
5
500
21.8
9.2
SMF6.0A
SMF6.0CA
KG
AG
6.67
7.37
10
6
400
19.4
10.3
SMF6.5A
SMF6.5CA
KK
AK
7.22
7.98
10
6.5
350
17.9
11.2
SMF7.0A
SMF7.0CA
KM
AM
7.78
8.6
10
7
200
16.7
12.0
SMF7.5A
SMF7.5CA
KP
AP
8.33
9.21
1
7.5
100
15.5
12.9
SMF8.0A
SMF8.0CA
KR
AR
8.89
9.83
1
8
50
14.7
13.6
SMF8.5A
SMF8.5CA
KT
AT
9.44
10.4
1
8.5
20
13.9
14.4
SMF9.0A
SMF9.0CA
KV
AV
10
11.1
1
9
10
13.0
15.4
SMF10A
SMF10CA
KX
AX
11.1
12.3
1
10
5
11.8
17.0
SMF11A
SMF11CA
KZ
AZ
12.2
13.5
1
11
3
11.0
18.2
SMF12A
SMF12CA
LE
BE
13.3
14.7
1
12
1
10.1
19.9
SMF13A
SMF13CA
LG
BG
14.4
15.9
1
13
1
9.3
21.5
SMF14A
SMF14CA
LK
BK
15.6
17.2
1
14
1
8.6
23.2
SMF15A
SMF15CA
LM
BM
16.7
18.5
1
15
1
8.2
24.4
SMF16A
SMF16CA
LP
BP
17.8
19.7
1
16
1
7.7
26.0
SMF17A
SMF17CA
LR
BR
18.9
20.9
1
17
1
7.3
27.6
SMF18A
SMF18CA
LT
BT
20
22.1
1
18
1
6.9
29.2
SMF20A
SMF20CA
LV
BV
22.2
24.5
1
20
1
6.2
32.4
SMF22A
SMF22CA
LX
BX
24.4
26.9
1
22
1
5.7
35.5
SMF24A
SMF24CA
LZ
BZ
26.7
29.5
1
24
1
5.2
38.9
SMF26A
SMF26CA
ME
CE
28.9
31.9
1
26
1
4.8
42.1
SMF28A
SMF28CA
MG
CG
31.1
34.4
1
28
1
4.4
45.4
SMF30A
SMF30CA
MK
CK
33.3
36.8
1
30
1
4.2
48.4
SMF33A
SMF33CA
MM
CM
36.7
40.6
1
33
1
3.8
53.3
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掌握芯技术 Core Technology
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Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Electrical Characteristics (TA=25℃)
Part Number
Device
Reverse
Breakdown
Marking
Stand-Off
Voltage
Code
Voltage
@IT
Maximum
Test
Clamping
Current
Voltage
@IPP
Peak
Reverse
Pulse
Leakage
Current
@VR
Uni
Bi
UNI
BI
VR(V)
Min(V)
Max(V)
IT(mA)
VC(V)
IPP(A)
IR(μA)
SMF36A
SMF36CA
MP
CP
40
44.2
1
36
1
3.5
58.1
SMF40A
SMF40CA
MR
CR
44.4
49.1
1
40
1
3.1
64.5
SMF43A
SMF43CA
MT
CT
47.8
52.8
1
43
1
2.9
69.4
SMF45A
SMF45CA
MV
CV
50
55.3
1
45
1
2.8
72.7
SMF48A
SMF48CA
MX
CX
53.3
58.9
1
48
1
2.6
77.4
SMF51A
SMF51CA
MZ
CZ
56.7
62.7
1
51
1
2.5
82.4
SMF54A
SMF54CA
NE
DE
60
66.3
1
54
1
2.3
87.1
SMF58A
SMF58CA
NG
DG
64.4
71.2
1
58
1
2.2
93.6
SMF60A
SMF60CA
NK
DK
66.7
73.7
1
60
1
2.1
96.8
SMF64A
SMF64CA
NM
DM
71.1
78.6
1
64
1
2.0
103.0
SMF70A
SMF70CA
NP
DP
77.8
86
1
70
1
1.8
113.0
SMF75A
SMF75CA
NR
DR
83.3
92.1
1
75
1
1.7
121.0
SMF78A
SMF78CA
NT
DT
86.7
95.8
1
78
1
1.6
126.0
SMF85A
SMF85CA
NV
DV
94.4
104
1
85
1
1.5
137.0
SMF90A
SMF90CA
NX
DX
100
111
1
90
1
1.4
146.0
SMF100A
SMF100CA
NZ
DZ
111
123
1
100
1
1.3
162.0
SMF110A
SMF110CA
PE
EE
122
135
1
110
1
1.2
177.0
SMF120A
SMF120CA
PG
EG
133
147
1
120
1
1.1
193.0
SMF130A
SMF130CA
PK
EK
144
159
1
130
1
1.0
209.0
SMF150A
SMF150CA
PM
EM
167
185
1
150
1
0.8
243.0
SMF160A
SMF160CA
PP
EP
178
197
1
160
1
0.8
259.0
SMF170A
SMF170CA
PR
ER
189
209
1
170
1
0.8
275.0
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掌握芯技术 Core Technology
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Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Derating Curve
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage %
PPP - Peak Pulse Power (W)
10000
1000
100
10
0.1
1
10
100
1000
tP-Pulse Duration (µs)
80
Tjmax=175
60
Tjmax=150
40
20
0
0
10000
Figure 3. Pulse Waveform
25
50
75
100 125 150
TA-Ambient Temperature ( )
175
Figure 4. Typical Junction Capacitance
10000
150
TJ=25
Pulse Width(td ) is defined as
the point where the peak
current decays to 50% of IPP M
tr=10µs
1000
Uni-directional V=0V
Peak Value IPPM
100
Cj (pF)
Peak Pulse Current, %IRSM
100
Half Value IPPM (IPPM/2)
100
Bi-directional V=0V
50
10/1000µs Waveform
as defined by R.E.A
10
td
0
0
1.0
2.0
3.0
TJ=25
f=1.0MHz
Vsig=50mVp-p
1
4.0
1
Time (ms)
Figure 6. Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
1.0
35
0.75
Peak Forward Surve Current (A)
PM(AV), Steady State Power Dissipation (W)
Figure 5. Steady State Power Dissipation Derating
Curve
10
100
1000
VBR-Reverse Breakdown Voltage (V)
Tjmax=175
0.50
Tjmax=150
0.25
0
0
25
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50
75
100 125 150
TL-Lead Temperature( )
175
Tj = Tj max.
8.3 ms Single Half Sine-Wave
30
25
20
15
10
5
0
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10
5
50
Number of Cycles at 60Hz
100
(V0)
Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Marking Code
Cathode Marking
XY
XY
XY
Device Code
Device Code
Part Number Code
SMF
XX C A
A:5% VBR Tolerance
C:Bidirectional;No C:Unidirectional
VR Voltage
200W Series Code
Soldering Parameters
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掌握芯技术 Core Technology
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Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Packaging Specification
Tape
For Uni-Devices
7 Inches Reel
D
Φ178.0±2.0
d
Φ13.0
W
9.5
d
D
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W
Quantity: 3000PCS/Reel
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