Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
5.0SMDJ Series Datasheet
Description
The 5.0SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board
space.
Features
⚫
Halogen free and RoHS compliant
⚫
Low profile package
⚫
Built-in strain relief Design
⚫
Low inductance
⚫
Excellent clamping capability
⚫
5000W peak pulse power capability at 10/1000μs waveform,
repetition rate (duty cycle): 0.01%
⚫
Fast response time: typically less than 1.0ps from 0V to VB min
⚫
Typical IR less than 2μA above 20V
⚫
Peak 260℃ high temperature Reflow Soldering withstanding
⚫
Meet MSL level1, per J-STD-020
⚫
IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact)
⚫
Unit Weight: 0.30g/PCS
Applications
TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in
telecom, computer, Industrial and consumer electronic applications.
Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol
Value
Units
Peak pulse power dissipation at 10/1000μs waveform
(Note1, Note2, Fig.1)
PPPM
Minimum 5000
Watts
Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3)
IPPM
See Table
Amps
PM(AV)
6.5
Watts
VF
3.5/5.0
V
IFSM
300
Amps
TJ,TSTG
-55 to +150
℃
Typical thermal resistance junction to lead
RθJL
15
℃/W
Typical thermal resistance junction to ambient
RθJA
75
℃/W
Steady state power dissipation at TA=50℃ (Fig.5)
Maximum Instantaneous Forward Voltage at 100A for
Unidirectional Only
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load, (JEDEC Method) (Note3, Fig.6)
Operating junction and Storage Temperature Ranges.
Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2.
2. Each terminal is surface Mounted on the 8.0mm×8.0mm copper pads.
3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum.
4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.
www.liownsemi.com
掌握芯技术 Core Technology
(V0)
Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Dimensions (SMC/DO-214AB)
Electrical Characteristics (TA=25℃)
Part Number
Device
Reverse
Breakdown
Marking
Stand-Off
Voltage
Code
Voltage
@IT
Maximum
Test
Clamping
Current
Voltage
@IPP
Peak
Reverse
Pulse
Leakage
Current
@VR
Unidirectional
Bidirectional
UNI
BI
VR(V)
Min(V)
Max(V)
IT(mA)
VC(V)
IPP(A)
IR(μA)
5.0SMDJ11A
5.0SMDJ11CA
5PEN
5BEN
11.0
12.20
13.50
10
18.2
275.0
800
5.0SMDJ12A
5.0SMDJ12CA
5PEP
5BEP
12.0
13.30
14.70
10
19.9
252.0
800
5.0SMDJ13A
5.0SMDJ13CA
5PEQ
5BEQ
13.0
14.40
15.90
10
21.5
233.0
500
5.0SMDJ14A
5.0SMDJ14CA
5PER
5BER
14.0
15.60
17.20
10
23.2
216.0
200
5.0SMDJ15A
5.0SMDJ15CA
5PES
5BES
15.0
16.70
18.50
1
24.4
205.0
100
5.0SMDJ16A
5.0SMDJ16CA
5PET
5BET
16.0
17.80
19.70
1
26.0
193.0
50
5.0SMDJ17A
5.0SMDJ17CA
5PEU
5BEU
17.0
18.90
20.90
1
27.6
181.0
20
5.0SMDJ18A
5.0SMDJ18CA
5PEV
5BEV
18.0
20.00
22.10
1
29.2
172.0
10
5.0SMDJ20A
5.0SMDJ20CA
5PEW
5BEW
20.0
22.20
24.50
1
32.4
155.0
5
5.0SMDJ22A
5.0SMDJ22CA
5PEX
5BEX
22.0
24.40
26.90
1
35.5
141.0
5
5.0SMDJ24A
5.0SMDJ24CA
5PEZ
5BEZ
24.0
26.70
29.50
1
38.9
129.0
2
5.0SMDJ26A
5.0SMDJ26CA
5PFE
5BFE
26.0
28.90
31.90
1
42.1
119.0
2
5.0SMDJ28A
5.0SMDJ28CA
5PFG
5BFG
28.0
31.10
34.40
1
45.4
110.0
2
5.0SMDJ30A
5.0SMDJ30CA
5PFK
5BFK
30.0
33.30
36.80
1
48.4
103.0
2
5.0SMDJ33A
5.0SMDJ33CA
5PFM
5BFM
33.0
36.7
40.6
1
53.3
93.9
2
5.0SMDJ36A
5.0SMDJ36CA
5PFP
5BFP
36.0
40.0
44.2
1
58.1
86.1
2
5.0SMDJ40A
5.0SMDJ40CA
5PFR
5BFR
40.0
44.4
49.1
1
64.5
77.6
2
5.0SMDJ43A
5.0SMDJ43CA
5PFT
5BFT
43.0
47.8
52.8
1
69.4
72.1
2
www.liownsemi.com
掌握芯技术 Core Technology
(V0)
Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Electrical Characteristics (TA=25℃)
Part Number
Device
Reverse
Breakdown
Test
Marking
Stand-Off
Voltage
Curren
Code
Voltage
@IT
t
Unidirectional
Bidirectional
UNI
BI
VR(V)
Min(V)
5.0SMDJ45A
5.0SMDJ45CA
5PFV
5BFV
45.0
50.0
5.0SMDJ48A
5.0SMDJ48CA
5PFX
5BFX
48.0
5.0SMDJ51A
5.0SMDJ51CA
5PFZ
5BFZ
5.0SMDJ54A
5.0SMDJ54CA
5PGE
5.0SMDJ58A
5.0SMDJ58CA
5.0SMDJ60A
Max(V)
Maximum
Clamping
Voltage
@IPP
Peak
Reverse
Pulse
Leakage
Current
@VR
IT(mA)
VC(V)
IPP(A)
IR(μA)
55.3
1
72.7
68.8
2
53.3
58.9
1
77.4
64.7
2
51.0
56.7
62.7
1
82.4
60.7
2
5BGE
54.0
60.0
66.3
1
87.1
57.5
2
5PGG
5BGG
58.0
64.4
71.2
1
93.6
53.5
2
5.0SMDJ60CA
5PGK
5BGK
60.0
66.7
73.7
1
96.8
51.7
2
5.0SMDJ64A
5.0SMDJ64CA
5PGM
5BGM
64.0
71.1
78.6
1
103.0
48.6
2
5.0SMDJ70A
5.0SMDJ70CA
5PGP
5BGP
70.0
77.8
86.0
1
113.0
44.3
2
5.0SMDJ75A
5.0SMDJ75CA
5PGR
5BGR
75.0
83.3
92.1
1
121.0
41.4
2
5.0SMDJ78A
5.0SMDJ78CA
5PGT
5BGT
78.0
86.7
95.8
1
126.0
39.7
2
5.0SMDJ85A
5.0SMDJ85CA
5PGV
5BGV
85.0
94.4
104.0
1
137.0
36.5
2
5.0SMDJ90A
5.0SMDJ90CA
5PGX
5BGX
90.0
100.0
111.0
1
146.0
34.3
2
5.0SMDJ100A
5.0SMDJ100C
5PGZ
5BGZ
100.0
111.0
123.0
1
162.0
30.9
2
5.0SMDJ110A
A
5.0SMDJ110C
5PHE
5BHE
110.0
122.0
135.0
1
177.0
28.3
2
5.0SMDJ120A
A
5.0SMDJ120C
5PHG
5BHG
120.0
133.0
147.0
1
193.0
26.0
2
5.0SMDJ130A
A
5.0SMDJ130C
5PHK
5BHK
130.0
144.0
159.0
1
209.0
24.0
2
5.0SMDJ150A
A
5.0SMDJ150C
5PHM
5BHM
150.0
167.0
185.0
1
243.0
20.6
2
5.0SMDJ160A
A
5.0SMDJ160C
5PHP
5BHP
160.0
178.0
197.0
1
259.0
19.3
2
5.0SMDJ170A
A
5.0SMDJ170C
5PHR
5BHR
170.0
189.0
209.0
1
275.0
18.2
2
A
www.liownsemi.com
掌握芯技术 Core Technology
(V0)
Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Derating Curve
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage %
PPPM - Peak Pulse Power (kW)
1000
100
10
1
0.1
0.1
1
100
10
td-Pulse Width (µs)
Tjmax=175
80
60
Tjmax=150
40
20
0
0
1000
Figure 3. Pulse Waveform
TJ=25
Pulse Width(td ) is defined as
the point where the peak
current decays to 50% of IPP M
tr=10µs
50
75
100 125 150
TA-Ambient Temperature ( )
175
100000
Uni-directional
10000
Cj (pF)
Peak Value IPPM
100
Half Value IPPM (IPPM/2)
1000
Bi-directional
100
50
10/1000µs Waveform
as defined by R.E.A
10
Measured at
1MHz, 100mV, 0V bias
td
0
0
1
1.0
2.0
3.0
1
4.0
Time (ms)
Figure 5. Steady State Power Dissipation Derating
Curve
10
100
VRWM-Reverse Stand-Off Voltage (V)
1000
Figure 6. Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
7
200
Peak Forward Surve Current (A)
PM(AV), Steady State Power Dissipation (W)
25
Figure 4. Typical Junction Capacitance
150
Peak Pulse Current, %IRSM
100
6
5
Tjmax=175
4
3
Tjmax=150
2
1
0
0
25
50
75
100
125
TA-Ambient Temperature (
www.liownsemi.com
150
175
Tj = Tj max.
8.3 ms Single Half Sine-Wave
180
160
140
120
100
80
60
40
20
0
)
掌握芯技术 Core Technology
1
10
5
50
Number of Cycles at 60Hz
100
(V0)
Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Marking Code
Cathode Marking
YYWW
YYWW
XX
XX
Logo
Device Code
Tracing Code
Logo
Device Code
Tracing Code
Part Number Code
5.0SMDJ XX C A
A:5% VBR Tolerance
C:Bidirectional;No C:Unidirectional
VR Voltage
5KW Series Code
Soldering Parameters
www.liownsemi.com
掌握芯技术 Core Technology
(V0)
Liown Semiconductor Co.,Ltd.
里阳半导体有限公司
浙江省玉环市半导体科技产业园
Tel:0576-8071-1338
Fax:0576-8071-1339
Packaging Specification
Tape
For Uni-Devices
13 Inches Reel
D
Φ330.0±2.0
d
Φ13.5±0.5
W
20.0±2.0
d
D
www.liownsemi.com
W
Quantity: 3000PCS/Reel
掌握芯技术 Core Technology
(V0)
很抱歉,暂时无法提供与“5.0SMDJ20A”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+2.29317
- 50+1.84410
- 150+1.65165
- 500+1.34741
- 3000+1.24049
- 6000+1.17634
- 国内价格
- 1+1.43000
- 10+1.32000
- 30+1.29800
- 100+1.23200