5.0SMDJ120A

Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 5.0SMDJ Series Datasheet Description The 5.0SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board space. Features ⚫ Halogen free and RoHS compliant ⚫ Low profile package ⚫ Built-in strain relief Design ⚫ Low inductance ⚫ Excellent clamping capability ⚫ 5000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ⚫ Fast response time: typically less than 1.0ps from 0V to VB min ⚫ Typical IR less than 2μA above 20V ⚫ Peak 260℃ high temperature Reflow Soldering withstanding ⚫ Meet MSL level1, per J-STD-020 ⚫ IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) ⚫ Unit Weight: 0.30g/PCS Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in telecom, computer, Industrial and consumer electronic applications. Maximum Ratings and Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 5000 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 6.5 Watts VF 3.5/5.0 V IFSM 300 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 15 ℃/W Typical thermal resistance junction to ambient RθJA 75 ℃/W Steady state power dissipation at TA=50℃ (Fig.5) Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Ranges. Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2. 2. Each terminal is surface Mounted on the 8.0mm×8.0mm copper pads. 3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum. 4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts. www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Dimensions (SMC/DO-214AB) Electrical Characteristics (TA=25℃) Part Number Device Reverse Breakdown Marking Stand-Off Voltage Code Voltage @IT Maximum Test Clamping Current Voltage @IPP Peak Reverse Pulse Leakage Current @VR Unidirectional Bidirectional UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) 5.0SMDJ11A 5.0SMDJ11CA 5PEN 5BEN 11.0 12.20 13.50 10 18.2 275.0 800 5.0SMDJ12A 5.0SMDJ12CA 5PEP 5BEP 12.0 13.30 14.70 10 19.9 252.0 800 5.0SMDJ13A 5.0SMDJ13CA 5PEQ 5BEQ 13.0 14.40 15.90 10 21.5 233.0 500 5.0SMDJ14A 5.0SMDJ14CA 5PER 5BER 14.0 15.60 17.20 10 23.2 216.0 200 5.0SMDJ15A 5.0SMDJ15CA 5PES 5BES 15.0 16.70 18.50 1 24.4 205.0 100 5.0SMDJ16A 5.0SMDJ16CA 5PET 5BET 16.0 17.80 19.70 1 26.0 193.0 50 5.0SMDJ17A 5.0SMDJ17CA 5PEU 5BEU 17.0 18.90 20.90 1 27.6 181.0 20 5.0SMDJ18A 5.0SMDJ18CA 5PEV 5BEV 18.0 20.00 22.10 1 29.2 172.0 10 5.0SMDJ20A 5.0SMDJ20CA 5PEW 5BEW 20.0 22.20 24.50 1 32.4 155.0 5 5.0SMDJ22A 5.0SMDJ22CA 5PEX 5BEX 22.0 24.40 26.90 1 35.5 141.0 5 5.0SMDJ24A 5.0SMDJ24CA 5PEZ 5BEZ 24.0 26.70 29.50 1 38.9 129.0 2 5.0SMDJ26A 5.0SMDJ26CA 5PFE 5BFE 26.0 28.90 31.90 1 42.1 119.0 2 5.0SMDJ28A 5.0SMDJ28CA 5PFG 5BFG 28.0 31.10 34.40 1 45.4 110.0 2 5.0SMDJ30A 5.0SMDJ30CA 5PFK 5BFK 30.0 33.30 36.80 1 48.4 103.0 2 5.0SMDJ33A 5.0SMDJ33CA 5PFM 5BFM 33.0 36.7 40.6 1 53.3 93.9 2 5.0SMDJ36A 5.0SMDJ36CA 5PFP 5BFP 36.0 40.0 44.2 1 58.1 86.1 2 5.0SMDJ40A 5.0SMDJ40CA 5PFR 5BFR 40.0 44.4 49.1 1 64.5 77.6 2 5.0SMDJ43A 5.0SMDJ43CA 5PFT 5BFT 43.0 47.8 52.8 1 69.4 72.1 2 www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Electrical Characteristics (TA=25℃) Part Number Device Reverse Breakdown Test Marking Stand-Off Voltage Curren Code Voltage @IT t Unidirectional Bidirectional UNI BI VR(V) Min(V) 5.0SMDJ45A 5.0SMDJ45CA 5PFV 5BFV 45.0 50.0 5.0SMDJ48A 5.0SMDJ48CA 5PFX 5BFX 48.0 5.0SMDJ51A 5.0SMDJ51CA 5PFZ 5BFZ 5.0SMDJ54A 5.0SMDJ54CA 5PGE 5.0SMDJ58A 5.0SMDJ58CA 5.0SMDJ60A Max(V) Maximum Clamping Voltage @IPP Peak Reverse Pulse Leakage Current @VR IT(mA) VC(V) IPP(A) IR(μA) 55.3 1 72.7 68.8 2 53.3 58.9 1 77.4 64.7 2 51.0 56.7 62.7 1 82.4 60.7 2 5BGE 54.0 60.0 66.3 1 87.1 57.5 2 5PGG 5BGG 58.0 64.4 71.2 1 93.6 53.5 2 5.0SMDJ60CA 5PGK 5BGK 60.0 66.7 73.7 1 96.8 51.7 2 5.0SMDJ64A 5.0SMDJ64CA 5PGM 5BGM 64.0 71.1 78.6 1 103.0 48.6 2 5.0SMDJ70A 5.0SMDJ70CA 5PGP 5BGP 70.0 77.8 86.0 1 113.0 44.3 2 5.0SMDJ75A 5.0SMDJ75CA 5PGR 5BGR 75.0 83.3 92.1 1 121.0 41.4 2 5.0SMDJ78A 5.0SMDJ78CA 5PGT 5BGT 78.0 86.7 95.8 1 126.0 39.7 2 5.0SMDJ85A 5.0SMDJ85CA 5PGV 5BGV 85.0 94.4 104.0 1 137.0 36.5 2 5.0SMDJ90A 5.0SMDJ90CA 5PGX 5BGX 90.0 100.0 111.0 1 146.0 34.3 2 5.0SMDJ100A 5.0SMDJ100C 5PGZ 5BGZ 100.0 111.0 123.0 1 162.0 30.9 2 5.0SMDJ110A A 5.0SMDJ110C 5PHE 5BHE 110.0 122.0 135.0 1 177.0 28.3 2 5.0SMDJ120A A 5.0SMDJ120C 5PHG 5BHG 120.0 133.0 147.0 1 193.0 26.0 2 5.0SMDJ130A A 5.0SMDJ130C 5PHK 5BHK 130.0 144.0 159.0 1 209.0 24.0 2 5.0SMDJ150A A 5.0SMDJ150C 5PHM 5BHM 150.0 167.0 185.0 1 243.0 20.6 2 5.0SMDJ160A A 5.0SMDJ160C 5PHP 5BHP 160.0 178.0 197.0 1 259.0 19.3 2 5.0SMDJ170A A 5.0SMDJ170C 5PHR 5BHR 170.0 189.0 209.0 1 275.0 18.2 2 A www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage % PPPM - Peak Pulse Power (kW) 1000 100 10 1 0.1 0.1 1 100 10 td-Pulse Width (µs) Tjmax=175 80 60 Tjmax=150 40 20 0 0 1000 Figure 3. Pulse Waveform TJ=25 Pulse Width(td ) is defined as the point where the peak current decays to 50% of IPP M tr=10µs 50 75 100 125 150 TA-Ambient Temperature ( ) 175 100000 Uni-directional 10000 Cj (pF) Peak Value IPPM 100 Half Value IPPM (IPPM/2) 1000 Bi-directional 100 50 10/1000µs Waveform as defined by R.E.A 10 Measured at 1MHz, 100mV, 0V bias td 0 0 1 1.0 2.0 3.0 1 4.0 Time (ms) Figure 5. Steady State Power Dissipation Derating Curve 10 100 VRWM-Reverse Stand-Off Voltage (V) 1000 Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 7 200 Peak Forward Surve Current (A) PM(AV), Steady State Power Dissipation (W) 25 Figure 4. Typical Junction Capacitance 150 Peak Pulse Current, %IRSM 100 6 5 Tjmax=175 4 3 Tjmax=150 2 1 0 0 25 50 75 100 125 TA-Ambient Temperature ( www.liownsemi.com 150 175 Tj = Tj max. 8.3 ms Single Half Sine-Wave 180 160 140 120 100 80 60 40 20 0 ) 掌握芯技术 Core Technology 1 10 5 50 Number of Cycles at 60Hz 100 （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Marking Code Cathode Marking YYWW YYWW XX XX Logo Device Code Tracing Code Logo Device Code Tracing Code Part Number Code 5.0SMDJ XX C A A：5% VBR Tolerance C：Bidirectional；No C：Unidirectional VR Voltage 5KW Series Code Soldering Parameters www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Packaging Specification Tape For Uni-Devices 13 Inches Reel D Φ330.0±2.0 d Φ13.5±0.5 W 20.0±2.0 d D www.liownsemi.com W Quantity: 3000PCS/Reel 掌握芯技术 Core Technology （V0）