SMBJ14CA

Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 SMBJ Series Datasheet Description The SMBJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board space. Features ⚫ Halogen free and RoHS compliant ⚫ Low profile package ⚫ Built-in strain relief Design ⚫ Low inductance ⚫ Excellent clamping capability ⚫ 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ⚫ Fast response time: typically less than 1.0ps from 0V to VB min ⚫ Typical IR less than 1μA above 10V devices ⚫ Peak 260℃ high temperature Reflow Soldering withstanding ⚫ Meet MSL level1, per J-STD-020 ⚫ IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) ⚫ Unit Weight: 0.10g/PCS Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in telecom, computer, Industrial and consumer electronic applications. Maximum Ratings and Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 600 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 5.0 Watts VF 3.5/5.0 V IFSM 100 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 20 ℃/W Typical thermal resistance junction to ambient RθJA 100 ℃/W Steady state power dissipation at TA=50℃ (Fig.5) Maximum Instantaneous Forward Voltage at 50A for Unidirectional Only Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Ranges. Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2. 2. Each terminal is surface Mounted on the 5.0mm×5.0mm (0.03mm thick) copper pads. 3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum. 4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts. www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Dimensions (SMB/DO-214AA) Electrical Characteristics (TA=25℃) Device Code Part Number Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Reverse Leakage @VR Uni Bi UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMBJ5.0A SMBJ5.0CA KE AE 5.0 6.40 7.00 10 9.2 65.3 800 SMBJ6.0A SMBJ6.0CA KG AG 6.0 6.67 7.37 10 10.3 58.3 800 SMBJ6.5A SMBJ6.5CA KK AK 6.5 7.22 7.98 10 11.2 53.6 500 SMBJ7.0A SMBJ7.0CA KM AM 7.0 7.78 8.60 10 12.0 50.0 200 SMBJ7.5A SMBJ7.5CA KP AP 7.5 8.33 9.21 1 12.9 46.6 100 SMBJ8.0A SMBJ8.0CA KR AR 8.0 8.89 9.83 1 13.6 44.2 50 SMBJ8.5A SMBJ8.5CA KT AT 8.5 9.44 10.40 1 14.4 41.7 20 SMBJ9.0A SMBJ9.0CA KV AV 9.0 10.00 11.10 1 15.4 39.0 10 SMBJ10A SMBJ10CA KX AX 10.0 11.10 12.30 1 17.0 35.3 5 SMBJ11A SMBJ11CA KZ AZ 11.0 12.20 13.50 1 18.2 33.0 1 SMBJ12A SMBJ12CA LE BE 12.0 13.30 14.70 1 19.9 30.2 1 SMBJ13A SMBJ13CA LG BG 13.0 14.40 15.90 1 21.5 28.0 1 SMBJ14A SMBJ14CA LK BK 14.0 15.60 17.20 1 23.2 25.9 1 SMBJ15A SMBJ15CA LM BM 15.0 16.70 18.50 1 24.4 24.6 1 SMBJ16A SMBJ16CA LP BP 16.0 17.80 19.70 1 26.0 23.1 1 SMBJ17A SMBJ17CA LR BR 17.0 18.90 20.90 1 27.6 21.8 1 SMBJ18A SMBJ18CA LT BT 18.0 20.00 22.10 1 29.2 20.6 1 SMBJ20A SMBJ20CA LV BV 20.0 22.20 24.50 1 32.4 18.6 1 SMBJ22A SMBJ22CA LX BX 22.0 24.40 26.90 1 35.5 16.9 1 SMBJ24A SMBJ24CA LZ BZ 24.0 26.70 29.50 1 38.9 15.5 1 SMBJ26A SMBJ26CA ME CE 26.0 28.90 31.90 1 42.1 14.3 1 www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Electrical Characteristics (TA=25℃) Device Code Part Number Reverse Stand-Off Voltage Breakdown Voltage @IT Test Current Maximum Clamping Voltage @IPP Peak Pulse Current Reverse Leakage @VR Uni Bi UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMBJ28A SMBJ28CA MG CG 28.0 31.10 34.40 1 45.4 13.3 1 SMBJ30A SMBJ30CA MK CK 30.0 33.30 36.80 1 48.4 12.4 1 SMBJ33A SMBJ33CA MM CM 33.0 36.70 40.60 1 53.3 11.3 1 SMBJ36A SMBJ36CA MP CP 36.0 40.00 44.20 1 58.1 10.4 1 SMBJ40A SMBJ40CA MR CR 40.0 44.40 49.10 1 64.5 9.3 1 SMBJ43A SMBJ43CA MT CT 43.0 47.80 52.80 1 69.4 8.7 1 SMBJ45A SMBJ45CA MV CV 45.0 50.00 55.30 1 72.7 8.3 1 SMBJ48A SMBJ48CA MX CX 48.0 53.30 58.90 1 77.4 7.8 1 SMBJ51A SMBJ51CA MZ CZ 51.0 56.70 62.70 1 82.4 7.3 1 SMBJ54A SMBJ54CA NE DE 54.0 60.00 66.30 1 87.1 6.9 1 SMBJ58A SMBJ58CA NG DG 58.0 64.40 71.20 1 93.6 6.5 1 SMBJ60A SMBJ60CA NK DK 60.0 66.70 73.70 1 96.8 6.2 1 SMBJ64A SMBJ64CA NM DM 64.0 71.10 78.60 1 103.0 5.9 1 SMBJ70A SMBJ70CA NP DP 70.0 77.80 86.00 1 113.0 5.3 1 SMBJ75A SMBJ75CA NR DR 75.0 83.30 92.10 1 121.0 5.0 1 SMBJ78A SMBJ78CA NT DT 78.0 86.70 95.80 1 126.0 4.8 1 SMBJ85A SMBJ85CA NV DV 85.0 94.40 104.0 1 137.0 4.4 1 SMBJ90A SMBJ90CA NX DX 90.0 100.0 111.0 1 146.0 4.1 1 SMBJ100A SMBJ100CA NZ DZ 100.0 111.00 123.00 1 162.0 3.7 1 SMBJ110A SMBJ110CA PE EE 110.0 122.0 135.0 1 177.0 3.4 1 SMBJ120A SMBJ120CA PG EG 120.0 133.0 147.0 1 193.0 3.1 1 SMBJ130A SMBJ130CA PK EK 130.0 144.0 159.0 1 209.0 2.9 1 SMBJ150A SMBJ150CA PM EM 150.0 167.0 185.0 1 243.0 2.5 1 SMBJ160A SMBJ160CA PP EP 160.0 178.0 197.0 1 259.0 2.3 1 SMBJ170A SMBJ170CA PR ER 170.0 189.0 209.0 1 275.0 2.2 1 SMBJ180A SMBJ180CA PT ET 180.0 201.0 222.0 1 292.0 2.1 1 SMBJ190A SMBJ190CA PA EC 190.0 211.0 233.0 1 308.0 2.0 1 SMBJ200A SMBJ200CA PV EV 200.0 224.0 247.0 1 324.0 1.9 1 SMBJ210A SMBJ210CA PB ED 210.0 237.0 263.0 1 340.0 1.8 1 SMBJ220A SMBJ220CA PX EX 220.0 246.0 272.0 1 356.0 1.7 1 SMBJ250A SMBJ250CA PZ EZ 250.0 279.0 309.0 1 405.0 1.5 1 SMBJ300A SMBJ300CA QE FE 300.0 335.0 371.0 1 486.0 1.3 1 SMBJ350A SMBJ350CA QG FG 350.0 391.0 432.0 1 567.0 1.1 1 SMBJ400A SMBJ400CA QK FK 400.0 447.0 494.0 1 648.0 0.9 1 SMBJ440A SMBJ440CA QM FM 440.0 492.0 543.0 1 713.0 0.9 1 www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage % PPPM - Peak Pulse Power (kW) 100 10 1 100 60 Tjmax=150 40 20 0 0.1 1 10 100 td-Pulse Width (µs) 175 100000 10000 Uni-directional Cj (pF) Peak Pulse Current, %IRSM 50 75 100 125 150 TA-Ambient Temperature ( ) Peak Value IPPM 100 Half Value IPPM (IPPM/2) 1000 100 Bi-directional 50 10/1000µs Waveform as defined by R.E.A 10 TJ=25 1MHz，100mV，0V Bias td 0 0 1 1.0 2.0 Time (ms) 3.0 1 4.0 Figure 5. Steady State Power Dissipation Derating Curve 10 100 Reverse Breakdown Voltage (V) 1000 Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 7 200 Peak Forward Surve Current (A) PM(AV), Steady State Power Dissipation (W) 25 Figure 4. Typical Junction Capacitance TJ=25 Pulse Width(td) is defined as the point where the peak current decays to 50% of IPP M tr=10µs 0 1000 Figure 3. Pulse Waveform 150 Tjmax=175 80 6 5 Tjmax=175 4 3 Tjmax=150 2 1 0 0 25 50 75 100 125 TA-Ambient Temperature ( www.liownsemi.com 150 175 Tj = Tj max. 8.3 ms Single Half Sine-Wave 180 160 140 120 100 80 60 40 20 0 ) 掌握芯技术 Core Technology 1 10 5 50 Number of Cycles at 60Hz 100 （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Marking Code Cathode Marking YYY YYY XXXX XXXX Device Code Logo Date Code Device Code Logo Date Code Part Number Code SMBJ XX C A A：5% VBR Tolerance C：Bidirectional；No C：Unidirectional VR Voltage 600W Series Code Soldering Parameters www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Packaging Specification Tape For Uni-Devices 13 Inches Reel D Φ330.0±2.0 d Φ13.5±0.5 W 16.0±2.0 d D www.liownsemi.com W Quantity: 3000PCS/Reel 掌握芯技术 Core Technology （V0）