SMDJ170A

Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 SMDJ Series Datasheet Description The SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. For surface mounted applications in order to optimize board space. Features ⚫ Halogen free and RoHS compliant ⚫ Low profile package ⚫ Built-in strain relief Design ⚫ Low inductance ⚫ Excellent clamping capability ⚫ 3000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ⚫ Fast response time: typically less than 1.0ps from 0V to BV min ⚫ Typical IR less than 1μA above 10V devices ⚫ Peak 260℃ high temperature Reflow Soldering withstanding ⚫ Meet MSL level1, per J-STD-020 ⚫ IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) ⚫ Unit Weight: 0.265g/PCS Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in telecom, computer, Industrial and consumer electronic applications. Maximum Ratings and Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Rating Symbol Value Units Peak pulse power dissipation at 10/1000μs waveform (Note1, Note2, Fig.1) PPPM Minimum 3000 Watts Peak pulse current of at 10/1000μs waveform (Note 1, Fig.3) IPPM See Table Amps PM(AV) 6.5 Watts VF 3.5 V IFSM 300 Amps TJ,TSTG -55 to +150 ℃ Typical thermal resistance junction to lead RθJL 15 ℃/W Typical thermal resistance junction to ambient RθJA 75 ℃/W Steady state power dissipation at TA=50℃ (Fig.5) Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (JEDEC Method) (Note3, Fig.6) Operating junction and Storage Temperature Ranges. Notes: 1. Non-repetitive current pulse, per Fig.3 and Derating above TA=25℃ per Fig.2. 2. Each terminal is surface Mounted on the 8.0mm×8.0mm copper pads. 3. 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minutes maximum. www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Dimensions (SMC/DO-214AB) Electrical Characteristics (TA=25℃) Device Part Number Code Reverse Breakdown Stand-Off Voltage Voltage @IT Maximum Test Clamping Current Voltage @IPP Peak Reverse Pulse Leakage Current @VR UNI BI UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMDJ5.0A SMDJ5.0CA RDE DDE 5.0 6.40 7.00 10 9.2 326.1 600 SMDJ6.0A SMDJ6.0CA RDG DDG 6.0 6.67 7.37 10 10.3 291.3 600 SMDJ6.5A SMDJ6.5CA RDK DDK 6.5 7.22 7.98 10 11.2 267.9 300 SMDJ7.0A SMDJ7.0CA PDM DDM 7.0 7.78 8.60 10 12.0 250.0 200 SMDJ7.5A SMDJ7.5CA PDP DDP 7.5 8.33 9.21 1 12.9 232.6 100 SMDJ8.0A SMDJ8.0CA PDR DDR 8.0 8.89 9.83 1 13.6 220.6 50 SMDJ8.5A SMDJ8.5CA PDT DDT 8.5 9.44 10.40 1 14.4 208.3 20 SMDJ9.0A SMDJ9.0CA PDV DDV 9.0 10.00 11.10 1 15.4 194.8 10 SMDJ10A SMDJ10CA PDX DDX 10.0 11.10 2.30 1 17.0 176.5 5 SMDJ11A SMDJ11CA PDZ DDZ 11.0 12.20 13.50 1 18.2 164.8 2 SMDJ12A SMDJ12CA PEE DEE 12.0 13.30 14.70 1 19.9 150.8 2 SMDJ13A SMDJ13CA PEG DEG 13.0 14.40 15.90 1 21.5 139.5 1 SMDJ14A SMDJ14CA PEK DEK 14.0 15.60 17.20 1 23.2 129.3 1 SMDJ15A SMDJ15CA PEM DEM 15.0 16.70 18.50 1 24.4 123.0 1 SMDJ16A SMDJ16CA PEP DEP 16.0 17.80 19.70 1 26.0 115.4 1 SMDJ17A SMDJ17CA PER DER 17.0 18.90 20.90 1 27.6 108.7 1 SMDJ18A SMDJ18CA PET DET 18.0 20.00 22.10 1 29.2 102.7 1 SMDJ20A SMDJ20CA PEV DEV 20.0 22.20 24.50 1 32.4 92.6 1 SMDJ22A SMDJ22CA PEX DEX 22.0 24.40 26.90 1 35.5 84.5 1 www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Electrical Characteristics (TA=25℃) Device Part Number Code Reverse Breakdown Stand-Off Voltage Voltage @IT Maximum Test Clamping Current Voltage @IPP Peak Reverse Pulse Leakage Current @VR UNI BI UNI BI VR(V) Min(V) Max(V) IT(mA) VC(V) IPP(A) IR(μA) SMDJ24A SMDJ24CA PEZ DEZ 24.0 26.70 29.50 1 38.9 77.1 1 SMDJ26A SMDJ26CA PFE DFE 26.0 28.90 31.90 1 42.1 71.3 1 SMDJ28A SMDJ28CA PFG DFG 28.0 31.10 34.40 1 45.4 66.1 1 SMDJ30A SMDJ30CA PFK DFK 30.0 33.30 36.80 1 48.4 62.0 1 SMDJ33A SMDJ33CA PFM DFM 33.0 36.70 40.60 1 53.3 56.3 1 SMDJ36A SMDJ36CA PFP DFP 36.0 40.00 44.20 1 58.1 51.6 1 SMDJ40A SMDJ40CA PFR DFR 40.0 44.40 49.10 1 64.5 46.5 1 SMDJ43A SMDJ43CA PFT DFT 43.0 47.80 52.80 1 69.4 43.2 1 SMDJ45A SMDJ45CA PFV DFV 45.0 50.00 55.30 1 72.7 41.3 1 SMDJ48A SMDJ48CA PFX DFX 48.0 53.30 58.90 1 77.4 38.8 1 SMDJ51A SMDJ51CA PFZ DFZ 51.0 56.70 62.70 1 82.4 36.4 1 SMDJ54A SMDJ54CA PGE DGE 54.0 60.00 66.30 1 87.1 34.4 1 SMDJ58A SMDJ58CA PGG DGG 58.0 64.40 71.20 1 93.6 32.1 1 SMDJ60A SMDJ60CA PGK DGK 60.0 66.70 73.70 1 96.8 31.0 1 SMDJ64A SMDJ64CA PGM DGM 64.0 71.10 78.60 1 103.0 29.1 1 SMDJ70A SMDJ70CA PGP DGP 70.0 77.80 86.00 1 113.0 26.5 1 SMDJ75A SMDJ75CA PGR DGR 75.0 83.30 92.10 1 121.0 24.8 1 SMDJ78A SMDJ78CA PGT DGT 78.0 86.70 95.80 1 126.0 23.8 1 SMDJ85A SMDJ85CA PGV DGV 85.0 94.40 104.00 1 137.0 21.9 1 SMDJ90A SMDJ90CA PGX DGX 90.0 100.00 111.00 1 146.0 20.5 1 SMDJ100A SMDJ100CA PGZ DGZ 100.0 111.00 123.00 1 162.0 18.5 1 SMDJ110A SMDJ110CA PHE DHE 110.0 122.00 135.00 1 177.0 16.9 1 SMDJ120A SMDJ120CA PHG DHG 120.0 133.00 147.00 1 193.0 15.5 1 SMDJ130A SMDJ130CA PHK DHK 130.0 144.00 159.00 1 209.0 14.4 1 SMDJ150A SMDJ150CA PHM DHM 150.0 167.00 185.00 1 243.0 12.3 1 SMDJ160A SMDJ160CA PHP DHP 160.0 178.00 197.00 1 259.0 11.6 1 SMDJ170A SMDJ170CA PHR DHR 170.0 189.00 209.00 1 275.0 10.9 1 SMDJ180A SMDJ180CA HHT IHT 180.0 201.00 222.00 1 292.0 10.3 1 SMDJ190A SMDJ190CA HHV IHV 190.0 211.00 233.00 1 308.0 9.7 1 SMDJ200A SMDJ200CA HHX IHX 200.0 224.00 247.00 1 324.0 9.3 1 SMDJ210A SMDJ210CA HHZ IHZ 210.0 237.00 263.00 1 340.0 8.8 1 SMDJ220A SMDJ220CA HIE IIE 220.0 246.00 272.00 1 356.0 8.4 1 www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Ratings and Characteristic Curves (Ta=25℃ unless otherwise noted) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage % PPPM - Peak Pulse Power (kW) 1000 100 10 1 0.1 0.1 1 100 10 100 60 Tjmax=150 40 20 0 0 1000 50 75 100 125 150 175 ) Figure 4. Typical Junction Capacitance Figure 3. Pulse Waveform 150 TJ=25 Pulse Width(td ) is defined as the point where the peak current decays to 50% of IPP M tr=10µs 100000 Uni-directional 10000 Peak Value IPPM 100 Cj (pF) Peak Pulse Current, %IRSM 25 TA-Ambient Temperature ( td-Pulse Width (µs) Half Value IPPM (IPPM/2) 1000 Bi-directional 100 50 10/1000µs Waveform as defined by R.E.A 10 TJ=25 1MHz，100mV，0V Bias td 0 0 1 1.0 2.0 3.0 1 4.0 10 100 1000 Reverse Breakdown Voltage (V) Time (ms) Figure 5. Steady State Power Dissipation Derating Curve Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 7 200 Peak Forward Surve Current (A) PM(AV), Steady State Power Dissipation (W) Tjmax=175 80 6 5 Tjmax=175 4 3 Tjmax=150 2 1 0 0 25 50 75 100 125 TA-Ambient Temperature ( www.liownsemi.com 150 175 Tj = Tj max. 8.3 ms Single Half Sine-Wave 180 160 140 120 100 80 60 40 20 0 ) 掌握芯技术 Core Technology 1 10 5 50 Number of Cycles at 60Hz 100 （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Marking Code Cathode Marking YYWW YYWW XX XX Logo Device Code Tracing Code Logo Device Code Tracing Code Part Number Code SMDJ XX C A A：5% VBR Tolerance C：Bidirectional；No C：Unidirectional VR Voltage 3KW Series Code Soldering Parameters www.liownsemi.com 掌握芯技术 Core Technology （V0） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Tel:0576-8071-1338 Fax:0576-8071-1339 Packaging Specification Tape For Uni-Devices 13 Inches Reel D Φ330.0±2.0 d Φ13.5±0.5 W 20.0±2.0 d D www.liownsemi.com W Quantity: 3000PCS/Reel 掌握芯技术 Core Technology （V0）