BAT120S,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 BAT120 series Schottky barrier double diodes Product data sheet Supersedes data of 2001 Aug 27 2003 Aug 04 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series FEATURES PINNING • Low switching losses BAT120 PIN • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. A C S 1 k1 a1 a1 2 n.c. n.c. n.c. 3 k2 a2 k2 4 a1, a2 k1, k2 k1, a2 APPLICATIONS • Low power switched-mode power supplies • Rectification 4 handbook, halfpage • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. MARKING 1 TYPE NUMBER MARKING CODE BAT120A AT120A BAT120C AT120C BAT120S AT120S 3 MGL171 Simplified outline (SOT223) and pin configuration. a. BAT120A. 4 1 3 2 n.c. MGL172 b. BAT120C. Fig.2 BAT120 diode configurations and symbols. 2003 Aug 04 2 3 MSB002 - 1 4 1 2 n.c. Top view Fig.1 4 2 1 3 2 n.c. c. BAT120S. MGL173 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − 25 V − 1 A − 10 A − 0.5 A storage temperature −65 +150 °C junction temperature − 125 °C operating ambient temperature −65 +125 °C VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current tp < 10 ms; half sinewave; JEDEC method IRSM non-repetitive peak reverse current tp = 100 μs Tstg Tj Tamb ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF IR Cd forward voltage reverse current diode capacitance see Fig.3 IF = 100 mA 260 300 mV IF = 1 A 400 450 mV VR = 20 V; note 1; see Fig.4 80 500 μA VR = 25 V; note 1; see Fig.4 − 1 mA VR = 20 V; Tj = 100 °C; note 1 − 10 mA f = 1 MHz; VR = 4 V; see Fig.5 100 − pF Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to ambient note 1 100 K/W Note 1. Refer to SOT223 standard mounting conditions. 2003 Aug 04 3 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series GRAPHICAL DATA MBL886 handbook, 4 10halfpage MHB970 105 handbook, halfpage IR IF (mA) (1) (μA) (2) 104 103 (3) 103 (1) (2) 102 (3) (4) (4) 102 10 10 1 1 0 200 400 600 800 0 10 20 VR (V) 30 VF (mV) (1) Tamb = 125 °C. (2) Tamb = 100 °C. Fig.3 (3) Tamb = 75 °C. (4) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. Forward current as a function of forward voltage; typical values. Fig.4 MBK571 103 handbook, halfpage Cd (pF) 102 10 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 04 4 (3) Tamb = 75 °C. (4) Tamb = 25 °C. Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2003 Aug 04 REFERENCES IEC JEDEC EIAJ SC-73 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Aug 04 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp7 Date of release: 2003 Aug 04 Document order number: 9397 750 11054