BZX79-C6V2,113

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 25 2002 Feb 27 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage k a APPLICATIONS MAM239 • Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and approx. ±5% (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tj = 25 °C prior to surge see Tables 1 and 2 A Ptot total power dissipation Tamb = 50 °C; note 1 − 400 mW Tamb = 50 °C; note 2 − 500 mW 40 W tp = 100 μs; square wave; − Tj = 25 °C prior to surge; see Fig.3 250 UNIT mA PZSM non-repetitive peak reverse power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm. ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series Tj = 25 °C unless otherwise specified. SYMBOL VF 2002 Feb 27 PARAMETER forward voltage CONDITIONS IF = 10 mA; see Fig.4 2 MAX. UNIT 0.9 V NXP Semiconductors Product data sheet Voltage regulator diodes SYMBOL IR 2002 Feb 27 BZX79 series PARAMETER CONDITIONS MAX. UNIT reverse current BZX79-B/C2V4 VR = 1 V 50 μA BZX79-B/C2V7 VR = 1 V 20 μA BZX79-B/C3V0 VR = 1 V 10 μA BZX79-B/C3V3 VR = 1 V 5 μA BZX79-B/C3V6 VR = 1 V 5 μA BZX79-B/C3V9 VR = 1 V 3 μA BZX79-B/C4V3 VR = 1 V 3 μA BZX79-B/C4V7 VR = 2 V 3 μA BZX79-B/C5V1 VR = 2 V 2 μA BZX79-B/C5V6 VR = 2 V 1 μA BZX79-B/C6V2 VR = 4 V 3 μA BZX79-B/C6V8 VR = 4 V 2 μA BZX79-B/C7V5 VR = 5 V 1 μA BZX79-B/C8V2 VR = 5 V 700 nA BZX79-B/C9V1 VR = 6 V 500 nA BZX79-B/C10 VR = 7 V 200 nA BZX79-B/C11 VR = 8 V 100 nA BZX79-B/C12 VR = 8 V 100 nA BZX79-B/C13 VR = 8 V 100 nA BZX79-B/C15 to BZX79-B/C75 VR = 0.7VZnom 50 nA 3 DIFFERENTIAL RESISTANCE rdif (Ω) Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA MIN. MIN. TYP. MAX. MAX. MAX. TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) DIODE CAP. NON-REPETITIVE PEAK Cd (pF) REVERSE CURRENT IZSM (A) at f = 1 MHz; VR = 0 V at tp = 100 μs; Tamb = 25 °C at IZtest = 5 mA TYP. MAX. MIN. TYP. MAX. MAX. MAX. 4 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5 22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25 24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25 Product data sheet 2.35 BZX79 series 2V4 NXP Semiconductors BZX79Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest = 5 mA Voltage regulator diodes 2002 Feb 27 Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24 Tj = 25 °C unless otherwise specified. DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) DIODE CAP. NON-REPETITIVE PEAK Cd (pF) REVERSE CURRENT IZSM (A) at f = 1 MHz; VR = 0 V at tp = 100 μs; Tamb = 25 °C 5 Tol. ±2% (B) Tol. approx. ±5% (C) MIN. MAX. MIN. 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 MAX. at IZtest = 0.5 mA at IZtest = 2 mA TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. NXP Semiconductors BZX79Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest = 2 mA Voltage regulator diodes 2002 Feb 27 Table 2 Per type, BZX79-B/C27 to BZX79-B/C75 Tj = 25 °C unless otherwise specified. Product data sheet BZX79 series NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp T 1 10−1 1 10 102 103 104 δ= 6 T tp (ms) Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 2002 Feb 27 tp 105 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Fig.4 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.8 1 VF (V) Typical forward current as a function of forward voltage. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) −5 60 0 4 8 BZX79-B/C2V4 to BZX79-B/C4V3. Tj = 25 to 150 °C. BZX79-B/C4V7 to BZX79-B/C12. Fig.5 Fig.6 16 IZ (mA) 20 Tj = 25 to 150 °C. Temperature coefficient as a function of working current; typical values. 2002 Feb 27 12 7 Temperature coefficient as a function of working current; typical values. NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) G1 UNIT b max. D max. max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOD27 A24 DO-35 SC-40 2002 Feb 27 8 EUROPEAN PROJECTION ISSUE DATE 97-06-09 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 27 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp10 Date of release: 2002 Feb 27 Document order number: 9397 750 09387