PSMN5R6-100PS,127

PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive sources 1.3 Applications • DC-to-DC converters • Load switching • Motor control • Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 306 W VGS = 10 V; ID = 25 A; Tj = 25 °C; - 4.3 5.6 mΩ [1] Static characteristics RDSon drain-source on-state resistance Fig. 11; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 80 A; VDS = 50 V; - 43 - nC total gate charge Fig. 13; Fig. 14 - 141 - nC VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; - - 469 mJ Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Vsup ≤ 100 V; RGS = 50 Ω; unclamped PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 [1] Continious current limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number Package PSMN5R6-100PS Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Marking Table 4. Marking codes Type number Marking code PSMN5R6-100PS PSMN5R6-100PS 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V ID drain current - 95 A - 100 A VGS = 10 V; Tj = 100 °C; Fig. 1 VGS = 10 V; Tmb = 25 °C; Fig. 1 PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 [1] © Nexperia B.V. 2017. All rights reserved 2 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Symbol Parameter Conditions Min Max Unit IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 539 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 306 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 100 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 539 A VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; - 469 mJ [1] Avalanche Ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] Vsup ≤ 100 V; RGS = 50 Ω; unclamped Continious current limited by package. 003aad683 150 ID (A) Pder (%) (1) 100 80 50 0 Fig. 1. 03aa16 120 40 0 50 100 0 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature PSMN5R6-100PS Product data sheet Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 30 November 2012 50 © Nexperia B.V. 2017. All rights reserved 3 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 003aad702 103 ID (A) Limit RDSon = VDS / ID tp =10 µ s 102 100 µs DC 10 1 ms 10 ms 100 ms 1 10- 1 Fig. 3. 1 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.3 0.49 K/W 003aad684 1 Zth (K/W) δ = 0.5 10- 1 0.2 0.1 0.05 0.02 10- 2 P δ= tp T single shot tp 10- 3 Fig. 4. 10- 6 10- 5 10- 4 10- 3 10- 2 t T 10- 1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 4 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V Fig. 8; Fig. 9 gate-source threshold voltage 1 - - V Fig. 9 - - 4.6 V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µA VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; - - 15.7 mΩ - 4.3 5.6 mΩ f = 1 MHz - 0.97 - Ω Static characteristics V(BR)DSS VGS(th) VGSth ID = 1 mA; VDS = VGS; Tj = 175 °C; ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 10 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 RG gate resistance Dynamic characteristics QG(tot) total gate charge ID = 80 A; VDS = 50 V; VGS = 10 V; - 141 - nC QGS gate-source charge Fig. 13; Fig. 14 - 36 - nC QGD gate-drain charge - 43 - nC Ciss input capacitance - 8061 - pF - 561 - pF - 330 - pF VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15; Fig. 16 Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 Crss td(on) reverse transfer capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15; Fig. 16 turn-on delay time VDS = 50 V; RL = 0.6 Ω; VGS = 10 V; - 31 - ns tr rise time RG(ext) = 1.5 Ω - 46 - ns td(off) turn-off delay time - 83 - ns tf fall time - 34 - ns - 0.79 1.2 V Source-drain diode VSD source-drain voltage PSMN5R6-100PS Product data sheet IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 5 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 67 - ns Qr recovered charge VDS = 50 V - 182 - nC 003aad685 160 5.5 6 8 10 ID (A) 003aad692 250 gfs (S) 5 200 120 150 4.5 80 100 40 50 VGS (V) = 4 0 Fig. 5. 0 0.5 1 1.5 VDS (V) 0 2 Output characteristics: drain current as a Fig. 6. function of drain-source voltage; typical values 003aad687 160 0 20 40 60 80 03aa35 ID (A) min 10- 2 120 100 Forward transconductance as a function of drain current; typical values 10- 1 ID (A) ID (A) typ max 10- 3 80 10- 4 40 Tj = 25 °C Tj = 175 °C 0 Fig. 7. 0 2 4 VGS (V) 10- 5 10- 6 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values PSMN5R6-100PS Product data sheet Fig. 8. 0 4 VGS (V) 6 Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 30 November 2012 2 © Nexperia B.V. 2017. All rights reserved 6 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 003aad280 5 003aad774 3.2 VGS(th) (V) a 4 max 3 2.4 typ 1.6 2 min 0.8 1 0 - 60 Fig. 9. 0 60 120 Tj (°C) 0 -60 180 Gate-source threshold voltage as a function of junction temperature 003aad688 10 0 60 120 180 Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad689 10 RDSon (mΩ) 8 Tj (°C) VGS (V) = 4.5 RDSon (mΩ) 8 6 5 6 5.5 6 4 4 2 0 4 8 12 16 VGS (V) 2 20 Fig. 11. Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN5R6-100PS Product data sheet 8 10 15 0 20 40 60 80 ID (A) 100 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 7 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 003aad694 10 VDS VGS (V) ID 8 VDS = 20 V 6 VGS(pl) VDS = 50 V VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 003aaa508 0 0 40 80 Fig. 14. Gate charge waveform definitions 120 160 QG (nC) Fig. 13. Gate-source voltage as a function of gate charge; typical values 003aad691 105 003aad686 16000 C (pF) C (pF) Ciss 12000 Ciss 104 Crss 8000 103 Coss Crss 102 10- 1 1 10 VDS (V) 4000 0 102 0 4 8 VGS (V) 12 Fig. 15. Input, output and reverse transfer capacitances Fig. 16. Input and reverse transfer capacitances as a as a function of drain-source voltage; typical function of gate-source voltage, typical values values PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 8 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 003aad693 200 IS (A) 160 120 80 Tj = 175 °C 40 0 0 0.3 0.6 Tj = 25 °C 0.9 VSD (V) 1.2 Fig. 17. Source current as a function of source-drain voltage; typical values PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 9 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 8. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 18. Package outline TO-220AB (SOT78) PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 10 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 9. Legal information 9.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved 11 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 12 / 13 PSMN5R6-100PS Nexperia N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 10. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Package outline ................................................... 10 9 9.1 9.2 9.3 9.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 30 November 2012 PSMN5R6-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 13 / 13