PMZB290UNE2YL

PMZB290UNE2 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 1.2 A - 270 320 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G Simplified outline gate 2 S source 3 D drain Graphic symbol D 1 3 2 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMZB290UNE2 Package Name Description Version DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 7. Marking Table 4. Marking codes Type number Marking code PMZB290UNE2 0101 0011 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 2 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 1.2 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.8 A - 4 A [2] - 350 mW [1] - 715 mW - 5430 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.7 A Source-drain diode IS source current [1] [2] Tamb = 25 °C [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZB290UNE2 Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 24 March 2015 25 © Nexperia B.V. 2017. All rights reserved 3 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET aaa-017050 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 100 µs 1 ms DC; Tsp = 25 °C 10-1 10 ms DC; Tamb = 25 °C; 1 cm2 10-2 10-1 Fig. 4. 100 ms 1 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMZB290UNE2 Product data sheet Min Typ Max Unit [1] - 315 360 K/W [2] - 150 175 K/W - 20 23 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 4 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET aaa-017051 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.20 0.10 0.25 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-017052 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.50 0.33 0.20 0.10 0.25 10 10-3 0.05 0.02 0.01 0 10-2 10-1 FR4 PCB, mounting pad for drain = 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 5 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C - 270 320 mΩ VGS = 4.5 V; ID = 1.2 A; Tj = 150 °C - 400 475 mΩ VGS = 2.5 V; ID = 1.0 A; Tj = 25 °C - 360 480 mΩ VGS = 1.8 V; ID = 0.12 A; Tj = 25 °C - 470 680 mΩ VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C - 600 1190 mΩ VDS = 10 V; ID = 1.23 A; Tj = 25 °C - 1.9 - S total gate charge VDS = 10 V; ID = 1.0 A; VGS = 4.5 V; - 0.8 1.4 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.2 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 46 - pF Coss output capacitance Tj = 25 °C - 9.6 - pF Crss reverse transfer capacitance - 7.7 - pF td(on) turn-on delay time VDS = 10 V; ID = 1.0 A; VGS = 4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 10 - ns td(off) turn-off delay time - 11 - ns tf fall time - 4 - ns - 0.9 1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZB290UNE2 Product data sheet IS = 0.7 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 6 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET aaa-017053 4 VGS = 4.5 V ID (A) aaa-017054 10-3 3.0 V 4.0 V ID (A) 3 2.5 V 10-4 2 2.0 V 1 (1) 10-5 1.8 V (2) (3) 1.5 V 0 Fig. 7. 1.2 V 0 1 2 3 VDS (V) 10-6 4 0 Tj = 25 °C VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values Tj = 25 °C aaa-017055 1.2 V 1.0 VGS (V) Sub-threshold drain current as a function of gate-source voltage aaa-017056 3 1.5 V RDS(on) (Ω) 1.5 (1) minimum values (2) typical values (3) maximum values Fig. 8. 3 0.5 RDS(on) 1.8 V 2 2 2.0 V 2.5 V 3.0 V 1 1 3.5 V Tj = 150 °C VGS = 4.5 V 0 0 1 2 3 ID (A) 0 4 Tj = 25 °C Fig. 9. Product data sheet 0 2 4 6 VGS (V) 8 ID = 1 A Drain-source on-state resistance as a function of drain current; typical values PMZB290UNE2 Tj = 25 °C Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 7 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET aaa-017057 2.0 aaa-017058 2.0 ID (A) a 1.5 1.5 1.0 1.0 0.5 0 Tj = 150 °C 0 0.5 Tj = 25 °C 1 2 3 VGS (V) 0 -60 4 VDS > ID x RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance as a function of ambient temperature; typical values aaa-017059 1.5 0 aaa-017060 103 C (pF) VGS(th) (V) 1.0 102 (1) (1) (2) 0.5 0 -60 0 60 (2) 10 (3) (3) 120 Tj (°C) 1 10-1 180 1 ID = 250 µA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) 102 (2) Coss (3) Crss Fig. 13. Gate-source threshold voltage as a function of ambient temperature PMZB290UNE2 10 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 8 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET aaa-017061 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 0.5 QG (nC) Fig. 16. Gate charge waveform definitions 1.0 VDS = 10 V; ID = 0.5 A Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-017062 4 IS (A) 3 2 1 0 Tj = 150 °C Tj = 25 °C 0 0.4 0.8 1.2 1.6 2.0 VSD (V) VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 9 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 10 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm L (2x) SOT883B L1 2 b (2x) 3 e b1 1 e1 A1 A E D 0 0.5 Dimensions Unit 1 mm scale A(1) A1 b b1 D E e e1 L L1 max 0.40 0.04 0.20 0.55 0.65 1.05 0.30 0.30 nom 0.37 0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25 min 0.34 0.12 0.47 0.55 0.95 0.22 0.22 mm Note 1. Including plating thickness Outline version sot883b_po References IEC JEDEC JEITA European projection Issue date 11-11-02 12-01-03 SOT883B Fig. 19. Package outline DFN1006B-3 (SOT883B) PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 11 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 12 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZB290UNE2 v.1 20150324 Product data sheet - - PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 13 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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PMZB290UNE2 Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 15 / 16 PMZB290UNE2 Nexperia 20 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 24 March 2015 PMZB290UNE2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © Nexperia B.V. 2017. All rights reserved 16 / 16