BSS84AKMB
50 V, single P-channel Trench MOSFET
27 October 2020
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3
(SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
Ultra thin package profile with 0.37 mm height
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-50
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
-230
mA
-
4.5
7.5
Ω
VGS = -10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = -10 V; ID = -100 mA; Tj = 25 °C
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .
BSS84AKMB
Nexperia
50 V, single P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
1
3
2
Transparent
top view
G
DFN1006B-3 (SOT883B)
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
BSS84AKMB
Name
Description
Version
DFN1006B-3
plastic, leadless ultra small plastic package; 3 solder lands; 0.35
mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body
SOT883B
7. Marking
Table 4. Marking codes
Type number
Marking code
BSS84AKMB
0000
0010
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
BSS84AKMB
Product data sheet
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Nexperia
50 V, single P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-50
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = -10 V; Tamb = 25 °C
[1]
-
-230
mA
VGS = -10 V; Tamb = 100 °C
[1]
-
-150
mA
-
-0.9
A
[2]
-
360
mW
[1]
-
715
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
-
2700
mW
Tj
junction temperature
Tsp = 25 °C
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
-230
mA
HBM
[3]
-
1000
V
ESD maximum rating
VESD
[1]
[2]
[3]
electrostatic discharge
voltage
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
001aao121
120
Pder
(%)
Ider
(%)
80
80
40
40
0
-75
Fig. 2.
001aao122
120
-25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
BSS84AKMB
Product data sheet
0
-75
175
Fig. 3.
-25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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BSS84AKMB
Nexperia
50 V, single P-channel Trench MOSFET
001aao138
-10
ID
(A)
-1
(1)
-10-1
-10-2
10-1
(2)
(3)
(4)
(5)
-1
-10
-102
VDS (V)
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
2
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
BSS84AKMB
Product data sheet
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50 V, single P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from in free air
junction to ambient
Rth(j-sp)
[1]
[2]
Conditions
Min
Typ
Max
Unit
[1]
-
305
350
K/W
[2]
-
150
175
K/W
-
-
40
K/W
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
017aaa109
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0
10
10- 3
0.05
0.02
0.01
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm
Fig. 6.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS84AKMB
Product data sheet
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50 V, single P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-50
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS=VGS; Tj = 25 °C
-1.1
-1.6
-2.1
V
IDSS
drain leakage current
VDS = -50 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -50 V; VGS = 0 V; Tj = 150 °C
-
-
-2
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = -10 V; ID = -100 mA; Tj = 25 °C
-
4.5
7.5
Ω
VGS = -10 V; ID = -100 mA; Tj = 150 °C
-
8
13.5
Ω
VGS = -5 V; ID = -100 mA; Tj = 25 °C
-
5.7
8.5
Ω
VDS = -10 V; ID = -100 mA; Tj = 25 °C
-
150
-
mS
VDS = -25 V; ID = -200 mA; VGS = -5 V;
Tj = 25 °C
-
0.26
0.35
nC
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
-
0.12
-
nC
QGD
gate-drain charge
VDS = -10 V; ID = -200 mA; VGS = -5 V;
Tj = 25 °C
-
0.09
-
nC
Ciss
input capacitance
-
24
36
pF
Coss
output capacitance
VDS = -25 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
4.5
-
pF
Crss
reverse transfer
capacitance
-
1.3
-
pF
td(on)
turn-on delay time
-
13
26
ns
tr
rise time
-
11
-
ns
td(off)
turn-off delay time
-
48
96
ns
tf
fall time
-
25
-
ns
-0.48
-0.85
-1.2
V
VDS = -30 V; RL = 250 Ω; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
BSS84AKMB
Product data sheet
IS = -115 mA; VGS = 0 V; Tj = 25 °C
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Nexperia
50 V, single P-channel Trench MOSFET
001aao124
-0.20
VGS = -10 V -4.0 V -3.5 V
ID
(A)
001aao125
-10-3
ID
(A)
-0.15
(3)
(2)
(1)
-10-4
-3.0 V
-0.10
-10-5
-2.5 V
-0.05
0
0
-1
-2
-3
VDS (V)
-10-6
-4
Tj = 25 °C
Fig. 7.
Fig. 8.
001aao126
(1)
(2)
-0.5
-1.0
-1.5
-2.0
-2.5
VGS (V)
Tj = 25 °C; VDS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Output characteristics; drain current as a
function of drain-source voltage; typical values
12
0
Sub-threshold drain current as a function of
gate-source voltage
001aao127
14
(3)
RDSon
( )
RDSon
( )
8
10
(4)
(1)
(5)
4
6
(2)
0
0
-0.1
-0.2
-0.3
ID (A)
2
-0.4
Tj = 25 °C
(1) VGS = -3.0 V
(2) VGS = -3.5 V
(3) VGS = -4.0 V
(4) VGS = -5.0 V
(5) VGS = -10.0 V
Fig. 9.
0
-2
-4
-6
-8
-10
VGS (V)
ID = -200 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Drain-source on-state resistance as a function
of drain current; typical values
BSS84AKMB
Product data sheet
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Nexperia
50 V, single P-channel Trench MOSFET
001aao128
-0.20
ID
(A)
001aao129
2.0
a
(1)
(2)
-0.15
1.5
-0.10
1.0
-0.05
0
0.5
(2)
(1)
0
-1
-2
-3
VGS (V)
0
-60
-4
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
001aao130
-3
0
60
Tj (°C)
180
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
001aao131
102
VGS(th)
(V)
C
(pF)
-2
120
(1)
(1)
(2)
-1
(2)
10
(3)
(3)
0
-60
0
60
120
Tj (°C)
1
-10-1
180
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Product data sheet
-10
VDS (V)
-102
f = 1 MHz, VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
BSS84AKMB
-1
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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BSS84AKMB
Nexperia
50 V, single P-channel Trench MOSFET
001aao132
-10
VGS
(V)
VDS
-8
ID
-6
VGS(pl)
-4
VGS(th)
VGS
-2
0
QGS2
QGS1
0
0.2
0.4
QG (nC)
QGS
0.6
QGD
QG(tot)
ID = -0.2 A; VDS = -25 V; Tamb = 25 °C
003aaa508
Fig. 16. Gate charge waveform definitions
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
001aao133
-0.3
IS
(A)
-0.2
-0.1
(1)
0
0
-0.4
(2)
-0.8
VSD (V)
-1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 18. Duty cycle definition
BSS84AKMB
Product data sheet
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50 V, single P-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
L (2x)
SOT883B
L1
2
b (2x)
3
e
b1
1
e1
A1
A
E
D
0
0.5
Dimensions
Unit
mm
1 mm
scale
A(1)
A1
b
b1
D
E
e
e1
L
L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
Note
1. Including plating thickness
Outline
version
sot883b_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
11-11-02
12-01-03
SOT883B
Fig. 19. Package outline DFN1006B-3 (SOT883B)
BSS84AKMB
Product data sheet
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50 V, single P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1006B-3 (SOT883B) package
SOT883B
1.3
0.7
R0.05 (20x)
0.35
(2x)
0.9
0.45
0.6 0.7 0.8
0.25
(2x)
0.3 (2x)
0.3
0.4 (2x)
0.4
0.5 (2x)
0.5
occupied area
solder resist
solder lands
solder paste
Dimensions in mm
Issue date
13-07-02
20-02-25
sot883b_fr
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)
BSS84AKMB
Product data sheet
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50 V, single P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BSS84AKMB v.2
20201027
Product data sheet
-
BSS84AKMB v.1
Modifications:
•
•
BSS84AKMB v.1
BSS84AKMB
Product data sheet
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
20120606
Product data sheet
-
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50 V, single P-channel Trench MOSFET
15. Legal information
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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data sheet shall define the specification of the product as agreed between
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BSS84AKMB
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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In the event that customer uses the product for design-in and use in
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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50 V, single P-channel Trench MOSFET
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Test information.......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
©
Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 27 October 2020
BSS84AKMB
Product data sheet
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27 October 2020
©
Nexperia B.V. 2020. All rights reserved
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