PMPB10XNEZ

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 2.2 kV ESD protection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated, 100% solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -12 - 12 V ID drain current - - 12.9 A - 10 14 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 9 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name PMPB10XNE Description Version DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 4. Marking Table 4. Marking codes Type number Marking code PMPB10XNE 1H 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 12.9 A VGS = 4.5 V; Tamb = 25 °C [1] - 9 A VGS = 4.5 V; Tamb = 100 °C [1] - 5.7 A - 36 A - 1.7 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 [1] © Nexperia B.V. 2017. All rights reserved 2 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET Symbol Parameter Conditions Tamb = 25 °C; t ≤ 5 s [1] Tsp = 25 °C Min Max Unit - 3.5 W - 12.5 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 2 A HBM [2] - 2200 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMPB10XNE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 30 November 2012 25 © Nexperia B.V. 2017. All rights reserved 3 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 017aaa896 102 ID (A) tp = 10 µs Limit RDSon = VDS/ID 10 tp = 100 µs tp = 1 ms 1 tp = 10 ms DC; Tsp = 25 °C 10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] PMPB10XNE Product data sheet Min Typ Max Unit [1] - 235 270 K/W [2] - 67 74 K/W [2] - 33 36 K/W - 5 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 4 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 017aaa542 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 10 0.25 0.2 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 102 10 103 tp (s) 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 5 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET Symbol Parameter RDSon drain-source on-state resistance Conditions Min Typ Max Unit VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; ID = 9 A; Tj = 25 °C - 10 14 mΩ VGS = 4.5 V; ID = 9 A; Tj = 150 °C - 15 21 mΩ VGS = 2.5 V; ID = 8 A; Tj = 25 °C - 12 18 mΩ VGS = 1.8 V; ID = 3.7 A; Tj = 25 °C - 16 25 mΩ gfs forward transconductance VDS = 10 V; ID = 9 A; Tj = 25 °C - 60 - S RG gate resistance f = 1 MHz - 2 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 6 A; VGS = 4.5 V; - 23 34 nC QGS gate-source charge Tj = 25 °C - 2.6 - nC QGD gate-drain charge - 4.5 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 2175 - pF Coss output capacitance Tj = 25 °C - 235 - pF Crss reverse transfer capacitance - 205 - pF td(on) turn-on delay time VDS = 10 V; ID = 6 A; VGS = 4.5 V; - 13 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 35 - ns td(off) turn-off delay time - 54 - ns tf fall time - 50 - ns - 0.6 1.2 V Source-drain diode VSD source-drain voltage IS = 2 A; VGS = 0 V; Tj = 25 °C 017aaa897 36 1.7 V 4.5 V 2.5 V ID (A) 017aaa898 10-2 ID (A) 10-3 1.6 V 24 1.5 V 10-4 min typ max 1.4 V 12 10-5 1.3 V 0 Fig. 6. VGS = 1.2 V 0 1 2 3 VDS (V) 4 10-6 0.0 0.4 0.8 VGS (V) 1.2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Subthreshold drain current as a function of gate-source voltage PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 6 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 017aaa899 50 RDSon (mΩ) 1.6 V 40 1.4 V RDSon (mΩ) 1.8 V 1.7 V 017aaa900 50 40 1.9 V 30 30 20 20 Tj = 150 °C 10 Tj = 25 °C 2.5 V 10 0 VGS = 4.5 V 0 8 16 24 ID (A) 0 32 Tj = 25 °C Fig. 8. 0 1 2 3 4 VGS (V) 5 ID = 9 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9. 017aaa901 36 Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa902 1.6 a ID (A) 1.4 24 1.2 1.0 12 Tj = 150 °C 0 0.0 0.5 1.0 Tj = 25 °C 1.5 VGS (V) 0.8 0.6 -60 2.0 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMPB10XNE Product data sheet 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 7 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 017aaa903 1.2 017aaa904 104 VGS(th) (V) C (pF) max Ciss 0.8 103 typ 0.4 Coss min Crss 0.0 -60 0 60 120 Tj (°C) 102 10-1 180 10 VDS (V) 102 f = 1 MHz; VGS = 0 V ID = 0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa905 4.5 1 017aaa906 3 VGS (V) IS (A) 3.0 2 1.5 1 Tj = 150 °C 0.0 0 5 10 15 0 0.0 20 25 QG (nC) ID = 9 A; VDS = 10 V; Tamb = 25 °C Product data sheet 0.4 0.6 VSD (V) 0.8 VGS = 0 V Fig. 14. Gate-source voltage as a function of gate charge; typical values PMPB10XNE 0.2 Tj = 25 °C Fig. 15. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 8 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 16. Duty cycle definition 9. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 1.1 1.3 1.9 2.1 Dimensions in mm 0.25 0.35 0.65 12-04-30 Fig. 17. Package outline DFN2020MD-6 (SOT1220) PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 9 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 18. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 10 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB10XNE v.1 20121130 Product data sheet - - PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 11 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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PMPB10XNE Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 12 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 13 / 14 PMPB10XNE Nexperia 20 V, single N-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Test information ..................................................... 9 9 Package outline ..................................................... 9 10 Soldering .............................................................. 10 11 Revision history ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 30 November 2012 PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © Nexperia B.V. 2017. All rights reserved 14 / 14