PMPB55ENEAX

PMPB55ENEA 60 V, N-channel Trench MOSFET 6 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 4 A - 42 56 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 4 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate Simplified outline 1 Graphic symbol 7 2 5 G 3 4 4 S source 5 D drain Transparent top view DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source D 6 8 S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMPB55ENEA Description Version DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package; no leads; 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB55ENEA 2G PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 2 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 4 A VGS = 10 V; Tamb = 100 °C [1] - 2.5 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 16 A EDS(AL)S non-repetitive drainsource avalanche energy Tj(init) = 25 °C; ID = 1.3 A; DUT in avalanche (unclamped) - 12.6 mJ Ptot total power dissipation Tamb = 25 °C - 1.65 W - 15.6 W [1] Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 1.2 A HBM [2] - 2000 V ESD maximum rating VESD [1] [2] electrostatic discharge voltage 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Measured between all pins. 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 - 25 25 75 125 Tj (°C) 0 - 75 175 Fig. 1. Normalized total power dissipation as a function of junction temperature PMPB55ENEA Product data sheet - 25 25 75 125 Tj (°C) 175 Fig. 2. Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 3 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-022659 102 ID (A) Limit RDSon = VDS/ID tp = 10 µs 10 100 µs 1 1 ms DC; Tsp = 25 °C 10 ms 10-1 10-2 10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 100 ms 10 102 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 4 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] thermal resistance from junction to solder point Min Typ Max Unit [1] - 237 273 K/W [2] - 66 76 K/W - 4 8 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-022660 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.20 0.50 0.25 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-022661 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.50 0.33 0.20 0.25 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm 1 10 102 tp (s) 2 103 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 5 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 1.3 1.7 2.7 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 10 V; ID = 4 A; Tj = 25 °C - 42 56 mΩ VGS = 10 V; ID = 4 A; Tj = 150 °C - 80 106 mΩ VGS = 4.5 V; ID = 3.5 A; Tj = 25 °C - 48 69 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 4 A; Tj = 25 °C - 17 - S RG gate resistance f = 1 MHz - 2.7 - Ω VDS = 30 V; ID = 4 A; VGS = 10 V; Tj = 25 °C - 7.5 12 nC - 1 - nC - 1.2 - nC - 435 - pF - 47 - pF - 26 - pF - 4.5 - ns - 4 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 13.5 - ns tf fall time - 7 - ns - 0.8 1.2 V VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 30 V; ID = 4 A; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMPB55ENEA Product data sheet IS = 1.2 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 6 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-022662 16 aaa-022663 10-3 3.2 V ID (A) ID (A) 12 10 V 4.5 V 3.4 V min 10-4 3.0 V typ max 8 2.8 V 10-5 4 VGS = 2.5 V 0 0 1 2 3 4 VDS (V) 10-6 5 Tj = 25 °C 2.8 V 3V VGS (V) 3 aaa-022665 180 RDSon (mΩ) 150 3.2 V 120 120 90 3.4 V 90 60 4.5 V 60 VGS = 10 V 30 0 2 Fig. 7. Sub-threshold drain current as a function of gatesource voltage aaa-022664 2.5 V 1 VDS = 10 V Tj = 25 °C Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values 180 RDSon (mΩ) 150 0 0 4 8 12 ID (A) 0 16 0 2 4 6 8 10 VGS (V) ID = 4 A Fig. 8. Drain-source on-state resistance as a function of drain current; typical values Product data sheet Tj = 25 °C 30 Tj = 25 °C PMPB55ENEA Tj = 150 °C Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 7 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-022666 16 aaa-022667 2 ID (A) a 12 1.5 8 1 Tj = 150 °C 4 0.5 Tj = 25 °C 0 0 1 2 3 VGS (V) 0 -60 4 0 60 120 Tj (°C) 180 VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values aaa-022668 4 aaa-022669 103 Ciss VGS(th) (V) C (pF) 3 max 102 Coss 2 typ Crss min 10 1 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 250 μA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of ambient temperature PMPB55ENEA 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 8 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET aaa-022670 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 2 0 QGS2 0 2 4 6 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 8 VDS = 30 V; ID = 4 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-022671 5 IS (A) 4 3 Tj = 150 ºC Tj = 25 ºC 2 1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 9 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 10 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 12. Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 (8×) pin 1 index area B E A X D A A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2 5 e J D1 bp (6×) e 1 v E1 0 2 mm scale Dimensions (mm are the original dimensions) Unit A A1 bp min 0.25 nom max 0.65 0.04 0.35 D D1 D2 E E1 E2 1.9 1.0 0.2 1.9 1.1 0.51 2.1 1.2 0.3 2.1 1.3 0.61 e J J1 0.65 0.27 0.64 Lp 0.2 0.3 v y y1 0.1 0.05 0.1 Note 1. Dimension A is including plating thickness. Outline version A B 6 pin 1 index area mm y y1 C sot1220_po References IEC JEDEC JEITA European projection Issue date 12-04-23 12-04-30 SOT1220 Fig. 18. Package outline DFN2020MD-6 (SOT1220) PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 11 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 12 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB55ENEA v.2 20160606 Product data sheet - PMPB55ENEA v.1 Preliminary data sheet - - Modifications: PMPB55ENEA v.1 PMPB55ENEA Product data sheet • Updated Figure 14 20160401 All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 13 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 15. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. PMPB55ENEA Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 14 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 15 / 16 PMPB55ENEA Nexperia 60 V, N-channel Trench MOSFET 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information......................................................... 9 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information..................................................... 14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 06 June 2016 PMPB55ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 6 June 2016 © Nexperia B.V. 2017. All rights reserved 16 / 16