PMPB20XNEAX

PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -12 - 12 V ID drain current - - 7.5 A - 16 20 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 7.5 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm . PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMPB20XNEA Description Version DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 7. Marking Table 4. Marking codes Type number Marking code PMPB20XNEA 3J PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 2 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 7.5 A VGS = 4.5 V; Tamb = 100 °C [1] - 4.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 30 A EDS(AL)S non-repetitive drain-source avalanche energy Tj(init) = 25 °C; ID = 1.3 A; DUT in - 13 mJ total power dissipation Tamb = 25 °C [2] - 460 mW [1] - 1.65 W - 12.5 W Ptot avalanche (unclamped) Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 1.65 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] [3] PMPB20XNEA Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 3 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 175 Normalized continuous drain current as a function of junction temperature aaa-021670 102 ID (A) Tj (°C) Limit RDSon = VDS/ID tp = 10 µs 100 µs 10 1 ms 1 10 ms DC; Tsp = 25 °C 100 ms 10-1 10-2 10-1 Fig. 3. DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 4 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 235 270 K/W [2] - 67 74 K/W - 5 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-021671 103 Zth(j-a) (K/W) duty cycle = 1 0.5 102 0.25 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-021672 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.50 0.33 0.20 0.25 0.10 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 5 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.75 1 1.25 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 7.5 A; Tj = 25 °C - 16 20 mΩ VGS = 4.5 V; ID = 7.5 A; Tj = 150 °C - 24 30 mΩ VGS = 2.5 V; ID = 6.1 A; Tj = 25 °C - 24 30 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 7.5 A; Tj = 25 °C - 26.8 - S RG gate resistance f = 1 MHz - 1 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 7.5 A; VGS = 4.5 V; - 9.9 15 nC QGS gate-source charge Tj = 25 °C - 1.4 - nC QGD gate-drain charge - 3.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 930 - pF Coss output capacitance Tj = 25 °C - 178 - pF Crss reverse transfer capacitance - 144 - pF td(on) turn-on delay time VDS = 10 V; ID = 7.5 A; VGS = 4.5 V; - 16 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 40 - ns td(off) turn-off delay time - 44 - ns tf fall time - 22 - ns - 0.7 1.2 V Source-drain diode VSD source-drain voltage PMPB20XNEA Product data sheet IS = 1.65 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 6 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET aaa-021673 28 ID 4.5 V 2.5 V (A) 24 aaa-021674 10-3 2.3 V ID (A) 20 10-4 min 16 typ max VGS = 2 V 12 10-5 8 1.8 V 4 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 0.0 4 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-021675 50 RDSon (mΩ) RDSon (mΩ) 2.2 V VGS = 2 V 40 30 80 60 2.4 V 2.5 V 20 aaa-021676 100 40 3V 4.5 V 10 Tj = 150 °C 20 Tj = 25 °C 0 0 5 10 15 20 ID (A) 0 25 Tj = 25 °C Fig. 8. Product data sheet 4 8 VGS (V) 12 ID = 2.2 A Drain-source on-state resistance as a function of drain current; typical values PMPB20XNEA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 7 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET aaa-021677 25 aaa-021678 2.0 ID (A) a 20 1.5 15 1.0 10 0.5 5 0 Tj = 150 °C 0 Tj = 25 °C 1 2 0.0 -60 3 VGS (V) VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-021679 2.0 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-021682 104 VGS(th) (V) C (pF) 1.5 Ciss 103 1.0 max Coss typ 0.5 Crss min 0 -60 0 60 120 Tj (°C) 102 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMPB20XNEA 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 8 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET aaa-021683 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 4 8 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 12 ID = 7.53 A; VDS = 10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-021684 4 IS (A) 3 2 Tj = 150 °C 1 Tj = 25 °C 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 9 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 10 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 12. Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 (8×) pin 1 index area B E A X D A A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2 5 e J bp (6×) D1 e 1 v E1 0 2 mm scale Dimensions (mm are the original dimensions) Unit A A1 bp min 0.25 nom max 0.65 0.04 0.35 D D1 D2 E E1 E2 1.9 1.0 0.2 1.9 1.1 0.51 2.1 1.2 0.3 2.1 1.3 0.61 e J J1 0.65 0.27 0.64 Lp 0.2 0.3 v y y1 0.1 0.05 0.1 Note 1. Dimension A is including plating thickness. Outline version A B 6 pin 1 index area mm y y1 C sot1220_po References IEC JEDEC JEITA European projection Issue date 12-04-23 12-04-30 SOT1220 Fig. 18. Package outline DFN2020MD-6 (SOT1220) PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 11 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 12 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB20XNEA v.1 20160222 Product data sheet - - PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 13 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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PMPB20XNEA Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 14 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 15 / 16 PMPB20XNEA Nexperia 20 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 February 2016 PMPB20XNEA Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2016 © Nexperia B.V. 2017. All rights reserved 16 / 16