BUK9M43-100EX

BUK9M43-100E N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 2 October 2017 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 100 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 25 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 75 W VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 35 43 mΩ ID = 5 A; VDS = 80 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 - 8.2 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S Source 2 S Source 3 S Source 4 G Gate mb D Mounting base; connected to drain Graphic symbol D G mbb076 1 2 3 S 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package BUK9M43-100E Name Description Version LFPAK33 Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210 7. Marking Table 4. Marking codes Type number Marking code BUK9M43-100E 94310E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ - 100 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 10 V -15 15 V Pulsed; Tj ≤ 175 °C [1] [2] Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 75 W ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - 25 A VGS = 5 V; Tmb = 100 °C; Fig. 2 - 17.6 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 99 A IDM peak drain current Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 2 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Conditions Min Max Unit Source-drain diode IS source current Tmb = 25 °C - 25 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 99 A - 44 mJ Avalanche ruggedness EDS(AL)S [1] [2] [3] [4] non-repetitive drainsource avalanche energy ID = 25 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [3] [4] Accumulated pulse duration up to 50 hours delivers zero defect ppm. Significantly longer life times are achieved by lowering Tj and or VGS Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 ID (A) Pder (%) aaa-021070 30 25 80 20 15 40 10 5 0 0 50 100 150 Tmb (°C) 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 5 V Fig. 1. Normalized total power dissipation as a function of mounting base temperature BUK9M43-100E Product data sheet Fig. 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 3 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 ID (A) aaa-021072 103 102 Limit RDSon = VDS / ID tp = 10 us 10 100 us 1 DC 1 ms 10 ms 100 ms 10-1 10-2 1 102 10 103 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-021071 102 10 (1) (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 1.82 2 K/W BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 4 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 aaa-021073 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 P δ= tp T 0.02 single shot t tp 10-2 10-6 Fig. 5. 10-5 10-4 10-3 10-2 T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 9; Fig. 10 1.4 1.7 2.1 V ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 - - 2.45 V ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 10 0.5 - - V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µA VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 35 43 mΩ VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 34 43 mΩ VGS = 5 V; ID = 5 A; Tj = 175 °C; Fig. 12 - - 121 mΩ ID = 5 A; VDS = 80 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 - 20.2 - nC - 3.8 - nC - 8.2 - nC - 1736 2309 pF - 111 133 pF Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance BUK9M43-100E Product data sheet VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 5 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit Crss reverse transfer capacitance - 70 95 pF td(on) turn-on delay time - 9.8 - ns tr rise time - 16.7 - ns td(off) turn-off delay time - 32.1 - ns tf fall time - 17.8 - ns VDS = 80 V; RL = 15 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.78 1.2 V trr reverse recovery time - 28.1 - ns Qr recovered charge IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 38.1 - nC ID (A) aaa-021074 30 10 V 25 VGS = 3 V 3.5 V aaa-021075 100 RDSon (mΩ) 2.8 V 80 20 60 15 2.6 V 40 10 5 20 2.4 V 2.2 V 0 Fig. 6. 0 1 2 3 VDS (V) 0 4 0 2 4 6 8 10 12 14 VGS (V) 16 Tj = 25 °C Tj = 25 °C; ID = 5 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 6 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 ID (A) aaa-021076 60 003aah026 10-1 ID (A) 50 10-2 40 min 10-3 typ max 30 10-4 20 175°C 10 0 0 1 2 10-5 Tj = 25°C 3 VGS (V) 10-6 4 VDS = 12 V Fig. 8. 0 1 2 V GS (V) 3 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah025 3 VGS(th) (V) 2.5 Fig. 9. Sub-threshold drain current as a function of gate-source voltage aaa-021077 200 RDSon (mΩ) 2.4 V 2.6 V 2.8 V 160 max 2 120 typ 1.5 80 min 1 3V 40 0.5 0 -60 VGS = 10 V 0 60 120 Tj (° C) 0 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature Product data sheet 6 12 18 24 ID (A) 30 Tj = 25 °C ID = 1mA; VDS = VGS BUK9M43-100E 0 3.5 V Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 7 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 003aaj820 3 VGS (V) a 2.4 8 1.8 6 1.2 4 0.6 2 0 -60 0 60 120 Tj ( °C) VDS = 14 V 0 180 aaa-021078 10 80 V 0 5 10 15 20 25 30 35 QG (nC) 40 Tj = 25 °C; ID = 5 A Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig. 13. Gate-source voltage as a function of gate charge; typical values aaa-021079 104 C (pF) VDS ID Ciss 103 VGS(pl) VGS(th) VGS QGS2 QGS1 QGS Coss 102 QGD QG(tot) Crss 003aaa508 10 10-1 Fig. 14. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 8 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 IS (A) aaa-021080 20 15 10 5 175°C 0 0 0.2 0.4 Tj = 25°C 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values 11. Application information For guidance on how to use and understand this datasheet, please refer to application note AN11158 "Understanding power MOSFET datasheet parameters". BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 9 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 12. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E A e1 A c1 b1 L1 SOT1210 D2 mounting base D1 (D) H E1 L 1 4 b e w A A1 C X c Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) A A1 b(1) max 0.90 0.10 0.35 nom min 0.80 0.00 0.25 mm b1(1) c c1 2.4 0.20 0.30 2.2 0.10 0.20 D ref 2.60 D1 2.35 1.90 D2 0.50 E(1) E1 3.40 2.45 3.20 2.00 e e1 0.65 0.65 H L L1 Lp 3.40 0.65 0.25 0.50 3.20 0.45 0.13 0.30 w 0.20 0.10 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version sot1210_po References IEC JEDEC y JEITA European projection Issue date 14-04-25 16-08-09 SOT1210 Fig. 17. Package outline LFPAK33 (SOT1210) BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 10 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 13. Soldering Footprint information for reflow soldering of LFPAK33 package SOT1210 2.35 2.25 0.635 0.617 0.05 (all around) 0.75 0.62 1.05 1.91 2.47 0.51 3.9 0.51 0.6 0.83 0.4 (x8) solder land solder paste aperture occupied area solder resist 0.65 (x6) 0.3 (x8) 0.25 (x6) Notes : 1. Dimensions in mm sot1210_fr Fig. 18. Reflow soldering footprint for LFPAK33 (SOT1210) BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 11 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 14. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. 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Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’ aggregate and cumulative liability towards customer Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK9M43-100E Product data sheet Trademarks All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 12 / 13 BUK9M43-100E Nexperia N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 15. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Application information............................................. 9 12. Package outline........................................................ 10 13. Soldering................................................................... 11 14. Legal information..................................................... 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 2 October 2017 BUK9M43-100E Product data sheet All information provided in this document is subject to legal disclaimers. 2 October 2017 © Nexperia B.V. 2017. All rights reserved 13 / 13