PSMN041-80YLX

PSMN041-80YL N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • • • High efficiency due to low switching and conduction losses Suitable for logic level gate drive LFPAK56 package is footprint compatible with other Power-SO8 types Qualified to 175 °C 3. Applications • • • DC-to-DC converters Load switch TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 25 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 64 W VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 - 32.8 41 mΩ VGS = 10 V; ID = 5 A; Tj = 175 °C; - - 103 mΩ Static characteristics RDSon drain-source on-state resistance Fig. 13; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 5 A; VDS = 64 V; - 4.3 - nC QG(tot) total gate charge Tj = 25 °C; Fig. 14; Fig. 15 - 21.9 - nC PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; Tj(init) = 25 °C; ID = 25 A; - - 23.9 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Vsup ≤ 80 V; RGS = 50 Ω; unclamped; Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package PSMN041-80YL Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMN041-80YL 04180 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 80 V VGS gate-source voltage -20 20 V ID drain current - 18 A PSMN041-80YL Product data sheet VGS = 10 V; Tmb = 100 °C; Fig. 1 All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 2 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Max Unit VGS = 10 V; Tmb = 25 °C; Fig. 1 - 25 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 64 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 54 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 100 A VGS = 10 V; Tj(init) = 25 °C; ID = 25 A; - 23.9 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 80 V; RGS = 50 Ω; unclamped; Fig. 3 ID (A) 003aak757 30 03aa16 120 Pder (%) 25 20 80 15 10 40 5 0 Fig. 1. 0 25 50 75 100 125 150 175 Tj (°C) Continuous drain current as a function of mounting base temperature PSMN041-80YL Product data sheet 0 200 Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 1 May 2013 50 © Nexperia B.V. 2017. All rights reserved 3 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 IAL (A) 003aak759 102 10 (1) (2) 1 10-1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time ID (A) 003aak758 103 Limit RDSon = VDS / ID 102 tp = 10 us 10 100 us DC 1 1 ms 10 ms 100 ms 10-1 10-2 Fig. 4. 1 102 10 VDS (V) 103 Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 2.13 2.33 K/W PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 4 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 003aai358 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 P 0.02 δ= single shot tp 10-2 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 tp T t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = -55 °C 72 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 1 mA; VDS = VGS; Tj = 175 °C; 0.5 - - V - - 2.45 V 1.4 1.7 2.1 V VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 80 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 - 32.8 41 mΩ VGS = 5 V; ID = 5 A; Tj = 175 °C; - - 113 mΩ - - 103 mΩ VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 - 35.7 45 mΩ f = 1 MHz - 2.02 - Ω Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage gate-source threshold voltage Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 10; Fig. 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 13; Fig. 12 VGS = 10 V; ID = 5 A; Tj = 175 °C; Fig. 13; Fig. 12 RG gate resistance PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 5 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit ID = 5 A; VDS = 64 V; VGS = 10 V; - 21.9 - nC - 11.9 - nC Dynamic characteristics QG(tot) total gate charge Tj = 25 °C; Fig. 14; Fig. 15 ID = 5 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 14; Fig. 15 QGS gate-source charge ID = 5 A; VDS = 64 V; VGS = 10 V; - 2.5 - nC QGS(th) pre-threshold gatesource charge Tj = 25 °C; Fig. 14; Fig. 15 - 1.7 - nC QGS(th-pl) post-threshold gatesource charge - 0.8 - nC QGD gate-drain charge - 4.3 - nC VGS(pl) gate-source plateau voltage - 2.4 - V Fig. 14; Fig. 15 Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 1180 - pF Coss output capacitance Tj = 25 °C; Fig. 16 - 99 - pF Crss reverse transfer capacitance - 54 - pF td(on) turn-on delay time VDS = 60 V; RL = 10 Ω; VGS = 5 V; - 8.6 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 11.2 - ns td(off) turn-off delay time - 16.1 - ns tf fall time - 10.5 - ns ID = 5 A; VDS = 64 V; Tj = 25 °C; Source-drain diode VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V trr reverse recovery time IS = 5 A; dIS/dt = 100 A/µs; VGS = 0 V; - 21.3 - ns recovered charge VDS = 25 V; Tj = 25 °C - 22 - nC Qr PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 6 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 ID (A) 003aaj099 50 003aaj100 100 RDSon 10 V 4.5 V 40 80 3.5 V VGS = 3 V 30 60 2.8 V 20 40 2.6 V 10 20 2.4 V 0 0 1 2 3 VDS (V) 0 4 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values gfs (S) ID (A) 50 2 4 6 8 VGS (V) 10 Drain-source on-state resistance as a function of gate-source voltage; typical values 003aak760 60 0 003aaj102 40 32 40 24 30 16 20 8 10 0 Fig. 8. 175°C Tj = 25°C 0 5 10 15 20 25 ID (A) 30 Forward transconductance as a function of drain current; typical values PSMN041-80YL Product data sheet 0 Fig. 9. 0 0.5 1.5 2 2.5 3 3.5 VGS (V) 4 Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 May 2013 1 © Nexperia B.V. 2017. All rights reserved 7 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 003aah025 3 VGS(th) (V) 2.5 003aah026 10-1 ID (A) 10-2 max 2 min 10-3 typ typ max 1.5 10-4 min 1 10-5 0.5 0 -60 0 60 120 Tj (° C) 10-6 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature RDSon 2.6 V 1 2 V GS (V) 3 Fig. 11. Sub-threshold drain current as a function of gate-source voltage 003aaj105 100 0 003aaj818 3 2.8 V a 2.4 80 3V 1.8 60 3.5 V 1.2 4.5 V 40 0.6 VGS = 10 V 20 0 5 10 15 20 ID (A) 0 -60 25 Tj = 25 °C; tp = 300 μs Fig. 12. Drain-source on-state resistance as a function of drain current; typical values PSMN041-80YL Product data sheet 0 60 120 Tj ( °C) 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 8 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 VDS VGS (V) ID 003aaj107 10 8 VGS(pl) 6 VGS(th) VGS = 14 V VGS 64 V 4 QGS1 QGS2 QGS QGD QG(tot) 2 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 5 10 15 20 QG (nC) 25 Fig. 15. Gate-source voltage as a function of gate charge; typical values 003aaj108 104 C (pF) 003aaj109 100 IS (A) 80 Ciss 103 60 40 Coss 102 20 Crss 175°C Tj = 25°C 10 10-1 1 10 VDS (V) 0 102 0 0.25 0.5 0.75 1 1.25 VSD (V) 1.5 Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a function of source-drain (diode forward) as a function of drain-source voltage; typical voltage; typical values values PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 9 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669) PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 10 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. PSMN041-80YL Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 11 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 12 / 13 PSMN041-80YL Nexperia N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 01 May 2013 PSMN041-80YL Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2013 © Nexperia B.V. 2017. All rights reserved 13 / 13