PSMN5R0-80BS,118

PSMN5R0-80BS N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC-to-DC converters  Motor control  Load switching  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 270 W Tj junction temperature -55 - 175 °C - 7.19 8.5 mΩ - 4.36 5.1 mΩ [1] Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 - 21 - nC - 101 - nC - - 396 mJ Avalanche ruggedness EDS(AL)S [1] non-repetitive drain-source avalanche energy Continuous current is limited by package VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain[1] Simplified outline Graphic symbol mb 3 S source mb D mounting base; connected to drain D G mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number PSMN5R0-80BS Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN5R0-80BS PSMN5R0-80BS PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 2 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 80 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] - 100 A VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] - 100 A - 598 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 270 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 100 A Source-drain diode [1] IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 598 A VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped - 396 mJ Avalanche ruggedness non-repetitive drain-source avalanche energy EDS(AL)S [1] Continuous current is limited by package 003aad078 150 ID (A) 03aa16 120 Pder (%) 80 100 (1) 50 40 0 0 0 Fig 1. 50 100 150 Tmb (°C) 200 Product data sheet 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature PSMN5R0-80BS 0 Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 3 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 003aad299 103 Limit RDSon = VDS / ID ID (A) tp = 10 μs 102 100 μs (1) 10 DC 1 10-1 10-1 Fig 3. 1 10 1 ms 10 ms 100 ms 102 VDS (V) 103 Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 4 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.3 0.56 K/W Rth(j-a) thermal resistance from junction to ambient Minimum footprint; mounted on a printed circuit board - 50 - K/W 003aad080 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 0.02 δ= P tp T 10-3 single shot t tp T 10-4 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 5 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 7. Characteristics Table 7. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit 73 - - V Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C VGS(th) gate-source threshold voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.6 V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11; see Figure 10 2 3 4 V IDSS drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.02 8 µA VDS = 80 V; VGS = 0 V; Tj = 125 °C - - 150 µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure 13 - 10.46 12.3 Ω VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 12 - 7.19 8.5 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 - 4.36 5.1 mΩ f = 1 MHz - 0.95 - Ω 87 - nC RDSon RG internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 101 - nC gate-source charge ID = 25 A; VDS = 40 V; VGS = 10 V; see Figure 14; see Figure 15 - QGS - 26 - nC QGS(th) pre-threshold gate-source charge - 18 - nC QGS(th-pl) post-threshold gate-source charge - 8 - nC QGD gate-drain charge - 21 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 - 4.2 - V Ciss input capacitance - 6793 - pF Coss output capacitance VDS = 40 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 913 - pF Crss reverse transfer capacitance - 350 - pF td(on) turn-on delay time tr rise time td(off) tf VDS = 40 V; RL = 0.5 Ω; VGS = 10 V; RG(ext) = 4.7 Ω - 33 - ns - 21 - ns turn-off delay time - 73 - ns fall time - 14 - ns PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 6 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK Table 7. Characteristics …continued Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit - 0.8 1.2 V Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 40 V 003aad081 250 ID (A) 20 10 6 5.5 - 56 - ns - 116 - nC 003aad083 100 ID (A) 80 200 5 150 60 100 40 4.5 50 Tj = 175 °C 20 25 °C VGS (V) = 4 0 0 0 Fig 5. 1 2 3 V (V) 4 DS Output characteristics: drain current as a function of drain-source voltage; typical values 003aad087 10000 C (pF) 9000 Ciss 0 Fig 6. 3 4 VGS (V) 5 003aad088 140 gfs (S) 120 100 7000 80 60 Crss 5000 40 4000 20 0 3000 2 Fig 7. 2 Transfer characteristics: drain current as a function of gate-source voltage; typical values 8000 6000 1 4 6 8 VGS (V) Input and reverse transfer capacitances as a function of gate-source voltage; typical values PSMN5R0-80BS Product data sheet 0 10 Fig 8. 20 40 60 80 100 120 ID (A) Forward transconductance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 7 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 003aad089 40 003aad280 5 VGS(th) (V) RDSon (mΩ) 4 max 30 3 typ 20 2 min 10 1 0 0 Fig 9. 5 10 15 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 03aa35 10−1 ID (A) min 10−2 typ 0 −60 0 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 003aad082 10 RDSon (mΩ) max 60 VGS (V) = 5 8 5.5 10−3 6 6 10−4 10 4 10−5 20 10−6 2 0 2 4 6 0 50 100 150 200 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage PSMN5R0-80BS Product data sheet ID (A) 250 Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 8 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 003aad045 2.5 VDS a ID 2.0 VGS(pl) 1.5 VGS(th) VGS 1.0 QGS1 QGS2 QGS 0.5 QGD QG(tot) 003aaa508 0.0 -60 -30 0 30 60 90 120 150 180 Tj (°C) Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad085 10 VGS (V) Fig 14. Gate charge waveform definitions 003aad086 104 Ciss 8 C (pF) 6 VDS = 40 V 103 Coss 4 Crss 2 0 0 20 40 60 80 100 120 QG (nC) Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN5R0-80BS Product data sheet 102 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 9 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 003aad084 100 IS (A) 80 60 40 175 °C 20 Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) Fig 17. Source current as a function of source-drain voltage; typical values PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 10 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 8. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 18. Package outline SOT404 (D2PAK) PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 11 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN5R0-80BS v.1 20120320 Product data sheet - - PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 12 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 10. Legal information 10.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 10.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia. PSMN5R0-80BS Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 13 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the 11. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com PSMN5R0-80BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 © Nexperia B.V. 2017. All rights reserved 14 of 15 PSMN5R0-80BS Nexperia N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 20 March 2012