BUK965R8-100E,118

BUK965R8-100E N-channel TrenchMOS logic level FET 28 July 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 3. Applications • • • • • 12V, 24V and 48V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 120 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 349 W VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 - 4.62 5.8 mΩ VGS = 5 V; ID = 25 A; VDS = 80 V; - 51 - nC [1] Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Fig. 13; Fig. 14 [1] Continuous current is limited by package. BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol mb D G mbb076 2 1 S 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package BUK965R8-100E Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 7. Marking Table 4. Marking codes Type number Marking code BUK965R8-100E BUK965R8-100E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ - 100 V VGS gate-source voltage Tj ≤ 175 °C; DC -10 10 V -15 15 V - 349 W - 120 A Tmb = 100 °C; VGS = 5 V; Fig. 2 - 105 A Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 591 A -55 175 °C Tj ≤ 175 °C; Pulsed Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 2 IDM peak drain current Tstg storage temperature BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 [1][2] [3] © Nexperia B.V. 2017. All rights reserved 2 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET Symbol Parameter Conditions Tj junction temperature Min Max Unit -55 175 °C - 120 A - 591 A - 385 mJ Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C [3] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; [4][5] VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] [2] [3] [4] [5] Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 003aag368 160 ID (A) Pder (%) 120 (1) 80 80 40 40 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature BUK965R8-100E Product data sheet 0 200 Fig. 2. 0 100 150 Tmb (° C) 200 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 28 July 2016 50 © Nexperia B.V. 2017. All rights reserved 3 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET ID (A) 003aag369 103 Limit RDSon = VDS / ID tp = 10 us 102 100 us DC 10 1 ms 1 10 ms 100 ms 10-1 10-1 Fig. 3. 1 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aah029 103 IAL (A) 102 (1) 10 (2) 1 (3) 10-1 10-3 Fig. 4. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 0.43 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint ; mounted on a printed-circuit board - 50 - K/W BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 4 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 003aaf570 1 Zth(j-mb) (K/W) = 0.5 0.2 10-1 0.1 0.05 tp T P 10-2 0.02 10-3 10-6 Fig. 5. t tp single shot 10-5 10-4 10-3 10-2 T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration. 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.4 1.7 2.1 V - - 2.45 V 0.5 - - V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.05 1 µA VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 - 4.62 5.8 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; - 4.45 5.6 mΩ - - 16 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11 VGS = 5 V; ID = 25 A; Tj = 175 °C; Fig. 12; Fig. 11 Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 80 V; VGS = 5 V; - 133 - nC QGS gate-source charge Fig. 13; Fig. 14 - 23 - nC BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 5 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit QGD gate-drain charge - 51 - nC Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 13100 17460 pF Tj = 25 °C; Fig. 15 Coss output capacitance - 725 870 pF Crss reverse transfer capacitance - 450 620 pF td(on) turn-on delay time VDS = 80 V; RL = 3.2 Ω; VGS = 5 V; - 81 - ns tr rise time RG(ext) = 5 Ω - 168 - ns td(off) turn-off delay time - 237 - ns tf fall time - 148 - ns LD internal drain inductance from upper edge of drain mounting base to center of die - 2.5 - nH LS internal source inductance from source lead to source bonding pad - 7.5 - nH Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.77 1.2 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 70 - ns Qr recovered charge VDS = 25 V - 202 - nC 003aag370 200 VGS (V) = 10.0 ID (A) 4.5 003aag375 16 3.0 R DSon (mΩ ) 2.8 150 12 100 8 2.6 50 4 2.4 0 0 0.5 1 1.5 VDS (V) 0 2 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics: drain current as a function of drain-source voltage; typical values BUK965R8-100E Product data sheet 0 2 6 8 10 VGS (V) Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 July 2016 4 © Nexperia B.V. 2017. All rights reserved 6 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 003aag371 400 003aah025 3 VGS(th) (V) 2.5 ID (A) max 300 2 typ 1.5 200 min 1 100 0 Fig. 8. Tj = 175 ° C 0 Tj = 25 °C 2 4 0.5 VGS (V) 0 -60 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 9. 003aah026 10-1 0 60 120 003aag376 RDSon (mΩ) 10-2 2.8 VGS (V) = 2.6 12 min 10-3 typ max 8 10 180 Gate-source threshold voltage as a function of junction temperature 16 ID (A) Tj (° C) 3.0 -4 4 10-5 4.5 10.0 10-6 0 1 2 V GS (V) 0 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage BUK965R8-100E Product data sheet 0 50 100 150 ID (A) 200 Tj = 25 °C; tp = 300 µs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 7 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 003aag818 3 VDS a ID 2.4 VGS(pl) 1.8 VGS(th) VGS 1.2 QGS2 QGS1 0.6 0 -60 0 60 120 Tj (°C) QGS QGD QG(tot) 003aaa508 Fig. 13. Gate charge waveform definitions 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aag377 10 VGS (V) 003aag373 104 C (pF) 8 Ciss 104 14 V 6 4 VDS = 80 V 103 Coss 2 Crss 0 0 100 200 Q G (nC) 10 300 Tj = 25 °C; ID = 25 A Product data sheet 10-1 1 10 102 VDS (V) 103 VGS = 0 V; f = 1 MHz Fig. 14. Gate-source voltage as a function of gate charge; typical values BUK965R8-100E 2 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 8 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 003aag378 200 IS (A) 150 100 50 Tj = 175 °C 0 0 0.3 Tj = 25 °C 0.6 0.9 VSD (V) 1.2 VGS = 0 V Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 9 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 11. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 b2 c b e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 b b2 c 4.5 1.40 0.85 1.45 0.64 4.1 1.27 0.60 1.05 0.46 D D1 E 11 1.6 10.3 1.2 9.7 e 2.54 HD Lp Q 15.8 2.9 2.6 14.8 2.1 2.2 sot404_po Outline version References IEC JEDEC JEITA European projection Issue date 06-03-16 13-02-25 SOT404 Fig. 17. Package outline D2PAK (SOT404) BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 10 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. BUK965R8-100E Product data sheet Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 11 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 12 / 13 BUK965R8-100E Nexperia N-channel TrenchMOS logic level FET 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 July 2016 BUK965R8-100E Product data sheet All information provided in this document is subject to legal disclaimers. 28 July 2016 © Nexperia B.V. 2017. All rights reserved 13 / 13