PMPB15XPZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMPB15XP 12 V, single P-channel Trench MOSFET 22 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 1.5 kV ESD protection (human body model) • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -12 V VGS gate-source voltage -12 - 12 V ID drain current - - -11.8 A - 15 19 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 S 017aaa257 Transparent top view DFN2020MD-6 (SOT1220) 3. Ordering information Table 3. Ordering information Type number Package Name PMPB15XP Description Version DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 4. Marking Table 4. Marking codes Type number Marking code PMPB15XP 1A 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -12 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -11.8 A VGS = -4.5 V; Tamb = 25 °C [1] - -8.2 A VGS = -4.5 V; Tamb = 100 °C [1] - -5.2 A - -33 A - 1.7 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 [1] © NXP B.V. 2012. All rights reserved 2 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET Symbol Parameter Conditions Tamb = 25 °C; t ≤ 5 s [1] Tsp = 25 °C Min Max Unit - 3.5 W - 12.5 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1.9 A Source-drain diode IS source current [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMPB15XP Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 22 November 2012 25 © NXP B.V. 2012. All rights reserved 3 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET aaa-004171 -102 ID (A) Limit RDSon = VDS/ID tp = 100 µs -10 tp = 1 ms tp = 10 ms -1 DC; Tsp = 25 °C tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-1 -10-2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] PMPB15XP Product data sheet Min Typ Max Unit [1] - 235 270 K/W [2] - 67 74 K/W [2] - 33 36 K/W - 5 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET 017aaa542 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 10 0.25 0.2 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 102 10 103 tp (s) 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -12 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.68 -0.9 V IDSS drain leakage current VDS = -12 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -12 V; VGS = 0 V; Tj = 150 °C - - -100 µA PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C - 15 19 mΩ VGS = -4.5 V; ID = -8.2 A; Tj = 150 °C - 20 25 mΩ VGS = -2.5 V; ID = -3.9 A; Tj = 25 °C - 17 20 mΩ VGS = -1.8 V; ID = -3.9 A; Tj = 25 °C - 21 33 mΩ VDS = -10 V; ID = -8.2 A; Tj = 25 °C - 40 - S RDSon drain-source on-state resistance gfs forward transconductance Dynamic characteristics QG(tot) total gate charge VDS = -6 V; ID = -8.2 A; VGS = -4.5 V; - 67 100 nC QGS gate-source charge Tj = 25 °C - 5.5 - nC QGD gate-drain charge - 7.3 - nC Ciss input capacitance VDS = -6 V; f = 1 MHz; VGS = 0 V; - 2875 - pF Coss output capacitance Tj = 25 °C - 570 - pF Crss reverse transfer capacitance - 530 - pF td(on) turn-on delay time VDS = -6 V; ID = -8.2 A; VGS = -4.5 V; - 18 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 90 - ns td(off) turn-off delay time - 85 - ns tf fall time - 57 - ns - -0.6 -1.2 V Source-drain diode VSD source-drain voltage IS = -1.9 A; VGS = 0 V; Tj = 25 °C aaa-004172 -25 -4.5 V -2.0 V ID (A) -20 VGS = -1.7 V ID (A) -1.8 V -10-3 -1.6 V -15 -1.5 V -10 aaa-004173 -10-2 -10-4 min typ max -1.4 V -10-5 -1.3 V -5 -1.2 V 0 Fig. 6. 0 -1 -2 -3 VDS (V) -4 -10-6 0.0 -0.4 -0.8 VGS (V) -1.2 Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Subthreshold drain current as a function of gate-source voltage PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET aaa-004174 50 RDSon (mΩ) VGS = -1.5 V 40 -1.7 V -1.6 V aaa-004175 50 RDSon (mΩ) -1.9 V 40 -1.8 V 30 30 -2.0 V Tj = 150 °C -2.1 V 20 20 -2.5 V Tj = 25 °C -4.5 V 10 0 10 0 -5 -10 -15 -20 ID (A) 0 -25 Tj = 25 °C Fig. 8. 0 -1 -2 -3 -4 VGS (V) -5 ID = -8 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9. aaa-004176 -25 Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-004177 1.4 ID (A) a -20 1.2 -15 1.0 -10 Tj = 150 °C -5 0 0.0 -0.5 -1.0 0.8 Tj = 25 °C -1.5 VGS (V) 0.6 -60 -2.0 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMPB15XP Product data sheet 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 7 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET aaa-004178 -1.2 aaa-004179 104 VGS(th) (V) Ciss C (pF) max -0.8 typ Coss 103 min -0.4 0.0 -60 0 Crss 60 120 Tj (°C) 102 -10-1 180 ID = -0.25 mA; VDS = VGS -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values aaa-004180 -4.5 VDS VGS (V) ID -3.0 VGS(pl) VGS(th) VGS -1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0.0 0 5 10 15 20 25 Fig. 15. Gate charge waveform definitions 30 35 QG (nC) ID = -8 A; VDS = -6 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET aaa-004181 -2.0 IS (A) -1.5 -1.0 Tj = 150 °C -0.5 0.0 0.0 -0.2 Tj = 25 °C -0.4 -0.6 VDS (V) -0.8 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 1.1 1.3 1.9 2.1 Dimensions in mm 0.25 0.35 0.65 12-04-30 Fig. 18. Package outline DFN2020MD-6 (SOT1220) PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB15XP v.3 20121122 Product data sheet - PMPB15XP v.2 Modifications: • PMPB15XP v.2 20120719 Product data sheet - PMPB15XP v.1 PMPB15XP v.1 20120706 Preliminary data sheet - - PMPB15XP Product data sheet Table 7 "Characteristics": RDSon at VGS = -1.8 V corrected. All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 11 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 12 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 13 / 14 PMPB15XP NXP Semiconductors 12 V, single P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Test information ..................................................... 9 9 Package outline ..................................................... 9 10 Soldering .............................................................. 10 11 Revision history ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 November 2012 PMPB15XP Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 14 / 14