PSMN2R0-60PSRQ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia TO -2 20A B PSMN2R0-60PSR N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 25 June 2014 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in TO-220 package using advanced TrenchMOS technology. This product has been designed and qualified to 175 °C for use in a wide range of industrial, communications and Power Supply Equipment. 2. Features and benefits • • • • Low QG, QGD and QOSS for high system efficiency High reliability TO-220 package Qualified to 175 °C Reflow solderable 3. Applications • • • • • • Server and Telecom voltage regulator DC-to-DC, POL and System Power Motor Control Power OR-ing Sync Rectifier Load switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 - - 120 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 338 W Tj junction temperature -55 - 175 °C - 1.8 2.2 mΩ - 3 3.5 mΩ [1] Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; [2] Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12; Fig. 13 Scan or click this QR code to view the latest information for this product PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology Symbol Parameter Conditions Min Typ Max Unit gate-drain charge VGS = 10 V; ID = 75 A; VDS = 30 V; - 32 45 nC total gate charge Fig. 14; Fig. 15 - 137 192 nC VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - - 913 mJ Dynamic characteristics QGD QG(tot) Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] [2] Vsup ≤ 60 V; RGS = 50 Ω; Unclamped Continuous current limited by package Measured 3 mm from package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package PSMN2R0-60PSR Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 60 V PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology Symbol Parameter Conditions VGS gate-source voltage Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 2 VGS = 10 V; Tmb = 25 °C; Fig. 2 Min Max Unit -20 20 V - 338 W [1] - 120 A [1] - 120 A - 1135 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 120 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1135 A VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - 913 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] Vsup ≤ 60 V; RGS = 50 Ω; Unclamped Continuous current limited by package 03aa16 120 003aaf754 300 ID (A) Pder (%) 240 80 180 120 (1) 40 60 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature PSMN2R0-60PSR Product data sheet 0 200 Fig. 2. 0 100 150 Tmb (° C) 200 Continuous drain current as a function of mounting base temperature. All information provided in this document is subject to legal disclaimers. 25 June 2014 50 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 003aaf753 104 ID (A) 103 Limit R DSon = VDS / ID tp =10 µ s 102 100 µ s 10 1 ms 10 ms 100 ms 1 DC 10-1 10-1 Fig. 3. 1 10 102 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.22 0.44 K/W Rth(j-a) thermal resistance from junction to ambient Vertical in free air - 60 - K/W 003aaf752 1 Zth (j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 P 0.02 single shot 10 Fig. 4. tp -3 10-6 δ= 10-5 10-4 10-3 10-2 10-1 tp T t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V 2 3 4 V - - 4.6 V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.03 10 µA VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA - 1.8 2.2 mΩ - 4.3 5.1 mΩ - 3 3.5 mΩ f = 1 MHz 0.45 0.9 1.8 Ω ID = 75 A; VDS = 30 V; VGS = 10 V; - 137 192 nC - 129 181 nC Static characteristics V(BR)DSS VGS(th) Fig. 10 ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 11; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; [1] Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12; Fig. 13 RG gate resistance Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 ID = 0 A; VDS = 0 V; VGS = 10 V; Fig. 14; Fig. 15 QGS gate-source charge ID = 75 A; VDS = 30 V; VGS = 10 V - 48 68 nC QGS(th) pre-threshold gatesource charge ID = 75 A; VDS = 30 V; VGS = 10 V; - 29 - nC Fig. 14; Fig. 15 QGS(th-pl) post-threshold gatesource charge - 19 - nC QGD gate-drain charge - 32 45 nC VGS(pl) gate-source plateau voltage VDS = 30 V; Fig. 14; Fig. 15 - 5.7 - V Ciss input capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 9997 13500 pF output capacitance Tj = 25 °C; Fig. 16 - 1210 1640 Coss PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 pF © NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology Symbol Parameter Conditions Min Typ Max Unit Crss reverse transfer capacitance - 594 835 pF td(on) turn-on delay time VDS = 30 V; RL = 0.4 Ω; VGS = 10 V; - 42 63 ns RG(ext) = 4.7 Ω; ID = 75 A tr rise time - 56 84 ns td(off) turn-off delay time - 115 173 ns tf fall time - 49 74 ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 57 75 ns - 80 104 nC VDS = 30 V Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V [1] Measured 3 mm from package. 003aaf742 250 gfs (S) 003aaf743 80 ID (A) 200 60 150 40 100 20 50 Tj = 175 °C 0 Fig. 5. 0 30 60 90 ID (A) 0 120 Forward transconductance as a function of drain current; typical values PSMN2R0-60PSR Product data sheet Fig. 6. 0 4 VGS (V) 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 June 2014 2 Tj = 25 ° C © NXP Semiconductors N.V. 2014. All rights reserved 6 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 003aaf744 12 RDSon (mΩ ) 10 003aaf746 105 C (pF) Ciss 104 8 Crss 6 103 4 2 0 Fig. 7. 0 5 10 15 VGS (V) 102 10-1 20 Drain-source on-state resistance as a function of gate-source voltage; typical values Fig. 8. 003aad674 200 ID (A) 8 6 10 5 150 1 10 VGS (V) 102 Input and reverse transfer capacitances as a function of gate-source voltage, typical values 003aad280 5 VGS(th) (V) 4 max 4.5 3 typ 100 2 50 0 Fig. 9. VGS (V) = 4 0 0.5 1 1.5 VDS (V) min 1 0 - 60 2 0 60 120 Tj (°C) 180 Output characteristics: drain current as a Fig. 10. Gate-source threshold voltage as a function of function of drain-source voltage; typical values junction temperature PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 03aa35 10- 1 ID (A) min 10- 2 typ 003aaf751 10 R DSon (mΩ) max 8 10- 3 6 10- 4 4 10- 5 2 4.8 VGS (V) = 4.5 5.0 5.5 6.0 10.0 20.0 10- 6 0 2 4 0 6 VGS (V) Fig. 11. Sub-threshold drain current as a function of gate-source voltage 0 50 100 ID (A) 150 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values 003aaf747 2.4 VDS a 2 ID 1.6 VGS(pl) VGS(th) 1.2 VGS 0.8 QGS1 QGS2 QGS 0.4 QGD QG(tot) 003aaa508 0 -60 0 60 120 Tj (°C) Fig. 14. Gate charge waveform definitions 180 Fig. 13. Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 003aaf748 10 VGS (V) C (pF) 48V 8 003aaf749 105 30V 104 Ciss 103 Coss VDS = 12V 6 Crss 4 102 2 0 0 40 80 120 QG (nC) 10 10-1 160 Fig. 15. Gate-source voltage as a function of gate charge; typical values 1 10 2 VDS (V) 10 Fig. 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aaf750 200 IS (A) 160 120 80 40 0 Tj = 175 ° C 0 0.3 Tj = 25 °C 0.6 0.9 V SD (V) 1.2 Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 18. Package outline TO-220AB (SOT78) PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. 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PSMN2R0-60PSR Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 13 PSMN2R0-60PSR NXP Semiconductors N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................4 9 Characteristics ....................................................... 5 10 Package outline ................................................... 10 11 11.1 11.2 11.3 11.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 June 2014 PSMN2R0-60PSR Product data sheet All information provided in this document is subject to legal disclaimers. 25 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 13